EHIC Search Results

Contextual Info: • Photo Interrupters Ehictrical Data Shape Part No. Material Peak Wave Length CTR IF mA Min.(%) IF{mA) PI-A11 Figure No. IC(mA) Max.(V) GaAs/Sic 940 1 50 2 0.5 1 80 70 9 PI-A12 GaAs/Sic 940 1 50 2 0.5 1 80 70 10 PI-A13 GaAs/SIc 940 1 50 2 0.5 1 80 70 11

EHIC 110

Abstract: plessey application note an 112 Plessey semiconductors Linear Integrated circuit SL550GD sds1b wideband linear amplifier SL550 plessey radar plessey mixer a/plessey sl550
Contextual Info: P L ES S E Y~S EHIC ONI UCTOR S~TS 7220513 PLESSEY d Ë | 722ÜS13 aQGb35 jT T ~ | “ S E M IC O N D U C T O R S 95D 06351 PLESSEY D r-7¥-o9*/ Sem iconductors SL550G LOW NOISE W IDEB AND AMPLIFIER W ITH EXTERNAL GAIN CONTROL The SL550 is a silicon integrated circuit designed for use

Contextual Info: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 •Fax: 201-489-6911 ¿ • Cw h ehicago M iniature L am e Inc. re in n o v a tio n co m e s to lig h t S e r i e s 4 3 6 6 C S o l id S ta te L E D L a m p s -S u p e r B r i t e " P o p s ic le " 2,5m m x 5 m m

FNR10

Abstract: B158-H6987-X-X-7600 a64 marking code
Contextual Info: SIEMENS C540U/C541U Data Sheet Revision History : 1997-10-01 Previous Releases none Original Version Page / Chapters Subjects (changes since last revision) Edition 1997-10-01 Published by Siemens AG, Bereich Ha lb le iter, MarketingKommunikation, BalanstraBe 73,

stk 410 22 pin

Abstract: stk10c68-45 STK10C66
Contextual Info: STK10C68 SIÎTITEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES 2 5,3 0,35 and 45ns Access Times 12,15, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STOflE Timing 100,000 STORE cycles to EEPROM

Contextual Info: STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM SlfTlTEH FEA TU R ES DESCRIPTION 25,30, 35 and 45ns A ccess Times 12,15, 20 and 25ns Output Enable A ccess Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STO flETim ing

MCM2167H

Contextual Info: M O TO R O LA A d v a n c e Information MOS FA S T 16K B IT S T A T IC R A M N -C H A N N E L , S IL IC O N -G A T E The M CM 2167H is a 16,384-bit S ta tic Random Access M em o ry orga­ nized as 16,384 w o rd s by 1 bit, fabricated using M o to ro la 's H igh­

Contextual Info: 66AK2H06/12 Communications Infrastructure KeyStone SOC Silicon Revision 1.0, 1.1 Silicon Errata Literature Number: SPRZ402 June 2013 www.ti.com Release History Release Date Description/Comments SPRZ402 June 2013 Initial Release 2 66AK2H06/12 Communications Infrastructure KeyStone SOC Silicon Errata

6BH7

Abstract: DCWM PR78A 91AB A13A 74g4f diac 8 v 6b p 94 8a7l 6bfp
Contextual Info: 86.-/6 \y+2`dceu] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR W gah>0 7<8?86GE<6 FGE8A:G; u<?8 }Bamtdfghdj \58GJ88A 6B<? 4A7 6BAG46GF] W w84IL ?B47 HC GB hccc0p W x784? 9BE @BGBE FJ<G6;<A: u<?8 }Bam,llffkcj W 1<G;FG4A7 <AEHF; 6HEE8AG B9 kcp W *rq [ +r ?4LBHGF 4I4<?45?8

STK10C68

Abstract: STK10C68-M qa1 smd
Contextual Info: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SlfTÌTEH DESCRIPTION FEATURES 35, 45 and 55ns Access Times 15, 20 and 25ns Output Enable Access Unlimited Read and W rite to SRAM Hardware STORE Initiation

Contextual Info: IBM14N1372 IBM14N3272 IBM14N6472 High Perform ance SRAM Modules Features • 256K, 512K, and 1MB secondary cache module family using Synchronous and Asynchronous SRAMs. • Organized as a 32K, 64K, or 128K x 72 package on a 4.3” x 1.1”, 160-lead, Dual Read-out DIMM

CT2R

Abstract: SMD Transistor sak data sheet 2E40 8051 microcontroller DATA SHEET CC1F CT1R C504 C504-2R C504-L SAB-C504
Contextual Info: D a ta S h e e t , M a y 2 0 0 0 C504 8-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2000-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2000.

CC1H2,5

Abstract: SAF-C509-LM CMH1.5 icc17 80C517A CC1H4 SAB-C509-LM 80C517 CT1F CT1R
Contextual Info: Microcomputer Components 8-Bit CMOS Microcontroller C509-L Data Sheet 09.96 C509-L 8-Bit CMOS Microcontroller C509-L Advance Information • • • • • • • • • • • • • Full upward compatibility with SAB 80C517/80C517A and 8051/C501 microcontrollers

IC CD 4440 pin diagram

Abstract: Ic LA 4440 amplifier circuit diagram C505C SAB-C513A Switch ITV table up-down C513AO C513AO-2E AL p06 smd transistor
Contextual Info: Data Sheet, February 2000 C513AO 8 -Bit CMOS Mi c r0 c 0 nt r0 I Microcontrollers .• — IN FN S00492 N e v e r s t o p Infineon technologies t h i n k i n g C513AO Data Sheet Revision History : Current Version: 02.00 Previous Releases: Original Version

Contextual Info: IMS1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C 17103« FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules •Specifications guaranteed over full military temperature range -55° C to + 125“ C

s217 diode

Contextual Info: L296 L296P SGS-TTflOMSON IU HIGH CURRENT SWITCHING REGULATORS • ■ ■ ■ ■ ■ ■ ■ ■ ■ 4 A O UTPUT CURRENT 5.1 V T O 40 V O U T P U T V O L T A G E R A N G E 0 T O 100 % D U TY C Y C L E R A N G E P R E C IS E ± 2 % O N -C H IP R E F E R E N C E

Contextual Info: IMS1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C m O S DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to + 125° C

burndy connector

Abstract: burndy 96 pin Burndy Q1 Q1 burndy burndy 92 burndy high ground Q1 burndy corp tagram match 14P13724
Contextual Info: . IBM14P3272 IBM14P6472 IBM14P1372 High Performance SRAM Modules Features • 256KB, 512K and 1MB secondary cache module family for PowerPCTMPReP/CHRP platforms • Organized as a 32K, 64K or 128K x 72 package on a 5.06” x 1.10”, 182-lead, Dual Read-out

Contextual Info: böE D SIMTEK CORP aa?Möfl7 DDDoms hgs STK12C68 CMOS nvSRAM 8K x 8 High Performance AutoStore Nonvolatile Static RAM SIÎÏ1TEH FEA TU RES DESCRIPTION 30,35 and 45ns Access Times 15 mA Ice at 200ns Access Speed Automatic STORE to EEPROM on Power Down Hardware or Software Initiated STORE to

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller Edition 1997-10-01 This edition was realized using the software system FrameMaker . Published by Siemens AG, Bereich HalbJeiter, MarketingKommunikation, BalanstraBe 73, 81541 München Siemens AG 1997. All Rights Reserved.

Contextual Info: STK14C88-M 32 K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM MIL-STD-883 SM1TEK PRELIMINARY FEATURES DESCRIPTION • 35ns and 45ns SRAM Access Times The Simtek STK14C88-M is a fast static RAM with a nonvolatile, electrically-erasable PROM element

Contextual Info: STK20C04 CMOS nvSRAM High Performance 8 Nonvolatile Static RAM SimTEH FEATURES DESCRIPTION • 30,35 and 45ns A ccess Times • 15,20 and 25ns Output Enable A ccess • Unlimited Read and Write to SRAM • Hardware sro/?£lnitiation • Automatic STORE Timing

Contextual Info: STK10C 68A CMOS/SNOS nvSRAM High Performance 8K x 8 Non-Volatile Static RAM S IÌT ÌT G H PRELIMINARY FEATURES DESCRIPTION • • • • • • • • • • • • • • The Simtek STK10C68A is a fast static RAM 35, 45 and 55ns , with a non-volatile electrically-erasable PROM

Contextual Info: STK12C68-M CMOS nvSRAM 8K x 8 AutoStore Nonvolatile Static RAM MIL-STD-883 / SMD # 5962-94599 SlfïlTEH FEATURES DESCRIPTION The Sim tek STK12C68-M is a fast static RAM 35, 45 and 55ns , with a nonvolatile EEPROM element incor­ porated in each static memory cell. The SRAM can be