EEPROM PARALLEL ST Search Results

NROM16EE

Contextual Info: NROM16EE SAIFUN PROPRIETARY 16Mbit 2M x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM16EE is a 16Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is

A1815

Abstract: 10101B 10010b
Contextual Info: NROM4EE SAIFUN PROPRIETARY 4Mbit 512K x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM4EE is a 4Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is typically

serial vs parallel communication

Abstract: 200B AN551 DK-2750 RG41
Contextual Info: Serial EEPROM Solutions vs. Parallel Solutions AN551 Serial EEPROM Solutions vs. Parallel Solutions In searching for solutions to their system non-volatile memory requirements, equipment, systems and product designers are faced with a plethora of design related

IEEE1284

Abstract: ieee1284 usb oxford ps2 controller PCI840
Contextual Info: PCI840 The PCI Parallel Port Classic 1394 Firewire USB 2.0 PCI Bus Controller Evolving Standards EEPROM Interface Parallel Port The Oxford PCI840 integrates a comprehensive parallel port and bridge to PCI. Key features 33MHz, 32-bit target PCI controller Assurance of inter-operability.

M29W040

Abstract: M39432 4Mbit eeprom
Contextual Info: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while

M29W040

Abstract: M39432
Contextual Info: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while

4mbit eprom

Abstract: 4Mbit eeprom 4mbit otp M29W040 M39432 AI01946
Contextual Info: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while

X84041

Abstract: X84041P
Contextual Info: MPS EEPROM X84041 4K Micro Port Saver EEPROM FEATURES DESCRIPTION • Direct interface to micros —Eliminates I/O port requirements —No interface glue logic required —Eliminates need for parallel to serial converters • 3.3Mbps data transfer rate

Contextual Info: M39208 Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 100ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while

Contextual Info: M39432 Single Chip 4 Mbit Flash and 256Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while

652 MPS A13

Abstract: description of power saver block diagram X84256 X84256BI X84256Z X84256ZI
Contextual Info: MPS EEPROM X84256 256K µPort Saver EEPROM FEATURES DESCRIPTION • 10MHz data transfer rate • 30ns read access time • Direct interface to microprocessors and microcontrollers —Eliminates I/O port requirements —No interface glue logic required —Eliminates need for parallel to serial converters

BP01

Abstract: M44C260 M48C260
Contextual Info: M48C260 TELEFUNKEN Semiconductors MARC4 – 4-bit Microcontroller The M48C260 is a member of the TEMIC family of 4-bit single chip microcontrollers. It is the user programmable version of the M44C260. It contains EEPROM program memory, RAM, EEPROM data memory, parallel I/O ports,

M39432

Abstract: 4mbit tsop40
Contextual Info: M39432 Single Chip 4 Mbit Flash and 256Kbit Parallel EEPROM Memory P R E L IM IN A R Y DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while

Contextual Info: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte

M44C260

Abstract: M48C260 0014D1 EPI EEPROM CPU AGB A
Contextual Info: Tem ic M48C260 TELEFUNKEN Semiconductors MARC4 - 4-bit Microcontroller The M48C260 is a member of the TEMIC family of 4-bit single chip microcontrollers. It is the user programmable version of the M44C260. It contains EEPROM program memory, RAM, EEPROM data memory, parallel I/O ports,

smema

Abstract: smema control 500VA 5830 smema specifications
Contextual Info: 5830+ In-line On-board Programmer Key features Memory device types • Program up to 30 like devices in parallel • FLASH • Program unique or generic data • EEPROM • Erase, program and verify the data • MCU • Parallel programming of various devices types

NM28C64EN28

Abstract: NM28C64N28 NM28C64T28 C64L
Contextual Info: . J PRELII Semiconductor NM28C64/C64L/C64A 64k 8k x 8 Parallel Extended Voltage Range CMOS EEPROM General Description Features The NM28C64/C64L/C64A are fast, single-power supply CMOS EEPROM organized as 8 k by 8 bits. Both READ and WRITE modes function over the full Vqc range of 2.7V 5.5V.

GU34

Contextual Info: MC512E8 512K x 8 EEPROM Module Issue 1.3 December 2007 General Description Features The MC512E8 is a 512K x 8 parallel EEPROM module available in 32 pin ceramic J-leaded package. The 5V Vcc device is available with access times of 150, 200 or 250ns at commercial, industrial or military

spi flash m25pxx

Abstract: M25PXX M25P10 TA245 ST M25P10
Contextual Info: TA245 TECHNICAL ARTICLE The Code Shadowing Approach: Choose The Correct Non-Volatile Memory Yvon Bahout, EEPROM and Serial NVM Division, Application Lab Manager, STMicroelectronics, Rousset significantly shorter than those for NVM. The access time of a standard parallel Flash is today

Contextual Info: Main Menu CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

94c46

Abstract: 94LC46 93c46 wp interfacing 93LC46 85C72 24C04A 24LC01B 24LC04B 24LC16B 85C92
Contextual Info: Questions and Answers Concerning Serial EEPROMs AN572 Questions and Answers Concerning Serial EEPROMs Interfacing a serial EEPROM to a controller can be a confusing task, especially for first time users. Because communication with a parallel memory device is more

M28C64C

Abstract: M28C64X PDIP28 PLCC32
Contextual Info: M28C64C M28C64X PARALLEL ACCESS 64K 8K x 8 EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION – Active Current 30mA – Standby Current 100µA FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms

On Delay Timer

Abstract: EEPROMs
Contextual Info: Parallel EEPROM Data Protection Advantages of EEPROMs EEPROMs provide the memory solution wherever reprogrammable, nonvolatile memory is required. They are easy to use, requiring little or no support hardware such as refresh clocks or batteries. Each memory location can be selectively

Contextual Info: SCS-THOMSON 5 M28C16 Ï . K fflO [iM iLI S ¥M jïO © S _ PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW FAST ACCESS TIME: 70ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 100|iA FAST WRITE CYCLE: