EEPROM PARALLEL ST Search Results

NROM16EE

Contextual Info: NROM16EE SAIFUN PROPRIETARY 16Mbit 2M x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM16EE is a 16Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is

A1815

Abstract: 10101B 10010b
Contextual Info: NROM4EE SAIFUN PROPRIETARY 4Mbit 512K x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM4EE is a 4Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is typically

serial vs parallel communication

Abstract: 200B AN551 DK-2750 RG41
Contextual Info: Serial EEPROM Solutions vs. Parallel Solutions AN551 Serial EEPROM Solutions vs. Parallel Solutions In searching for solutions to their system non-volatile memory requirements, equipment, systems and product designers are faced with a plethora of design related

serial vs parallel communication

Abstract: 200B AN551 DK-2750 RG41
Contextual Info: Serial EEPROM Solutions vs. Parallel Solutions AN551 Serial EEPROM Solutions vs. Parallel Solutions In searching for solutions to their system non-volatile memory requirements, equipment, systems and product designers are faced with a plethora of design related

serial vs parallel communication

Abstract: advantages of microcontroller mini 123 card reader samsung tv serial eeprom 1993 serial eeprom 1995 200B AN551
Contextual Info: Serial EEPROM Solutions vs. Parallel Solutions AN551 Serial EEPROM Solutions vs. Parallel Solutions In searching for solutions to their system non-volatile memory requirements, equipment, systems and product designers are faced with a plethora of design related

Contextual Info: Address Sequence Generation on the STK11C and STK12C Simtek's nvSRAMs combine fast SRAM and EEPROM on a single chip in a shadow memory configuration. The parallel transfer of data from EEPROM to SRAM, a RECALL cycle, takes place under explicit user control. The STORE operation, which performs a parallel

M29W040

Abstract: M39432 AI02028
Contextual Info: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM)

IEEE1284

Abstract: ieee1284 usb oxford ps2 controller PCI840
Contextual Info: PCI840 The PCI Parallel Port Classic 1394 Firewire USB 2.0 PCI Bus Controller Evolving Standards EEPROM Interface Parallel Port The Oxford PCI840 integrates a comprehensive parallel port and bridge to PCI. Key features 33MHz, 32-bit target PCI controller Assurance of inter-operability.

Contextual Info: CAT28C16A 16K-Bit CMOS PARALLEL EEPROM FEATURES DESCRIPTION • Fast read access times: 90 ns, 120 ns, 200 ns The CAT28C16A is a fast, low power, 5V-only CMOS Parallel EEPROM organized as 2K x 8-bits. It requires a simple interface for in-system programming. On-chip

CAT28LV65

Abstract: MS-011 MS-013 MS-016
Contextual Info: CAT28LV65 64 kb CMOS Parallel EEPROM Description The CAT28LV65 is a low voltage, low power, CMOS Parallel EEPROM organized as 8K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

1N914

Abstract: 28C256 CAT28C256 MS-011 MS-016
Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

28LV64

Abstract: CAT28LV64 MS-011 MS-013 MS-016 DIMENSIONS soic 28 751BM
Contextual Info: CAT28LV64 64 kb CMOS Parallel EEPROM Description The CAT28LV64 is a low voltage, low power, CMOS Parallel EEPROM organized as 8K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

Contextual Info: CAT28LV65 64 kb CMOS Parallel EEPROM Description The CAT28LV65 is a low voltage, low power, CMOS Parallel EEPROM organized as 8K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

CAT28C16A-20

Abstract: 1N914 28C16A CAT28C16A MS-011 MS-013 MS-016
Contextual Info: CAT28C16A 16 kb CMOS Parallel EEPROM Description The CAT28C16A is a fast, low power, 5V−only CMOS Parallel EEPROM organized as 2K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

CAT28C256L12

Contextual Info: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

Contextual Info: CAT28LV64 64 kb CMOS Parallel EEPROM Description The CAT28LV64 is a low voltage, low power, CMOS Parallel EEPROM organized as 8K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

Contextual Info: CAT28C16A 16 kb CMOS Parallel EEPROM Description The CAT28C16A is a fast, low power, 5V−only CMOS Parallel EEPROM organized as 2K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

M29W040

Abstract: M39432 4Mbit eeprom
Contextual Info: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while

M29W040

Abstract: M39432
Contextual Info: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while

Contextual Info: CAT28C17A 16 kb CMOS Parallel EEPROM Description The CAT28C17A is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 2K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write protection

TDB 1033

Abstract: 1803E 1N914 28C17A CAT28C17A MS-011 MS-013 MS-016
Contextual Info: CAT28C17A 16 kb CMOS Parallel EEPROM Description The CAT28C17A is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 2K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write protection

TDB 1033

Contextual Info: CAT28C17A 16 kb CMOS Parallel EEPROM Description The CAT28C17A is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 2K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write protection

28C257-12

Abstract: 1N914 CAT28C257 MS-011 MS-016 28C257-15
Contextual Info: CAT28C257 256 kb CMOS Parallel EEPROM Description The CAT28C257 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write

Contextual Info: CAT28C257 256 kb CMOS Parallel EEPROM Description The CAT28C257 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write