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EEFROM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PCF8572
Abstract: PCF8582E-2 PCF8571 PCD8582D-2 PCF8570 PCF8581 PCF8582C-2 PCF8582F2 723H PCA8582
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OCR Scan |
pcx8582x-2pcf8570pcf8571pcf8572+7 | |
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Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom) |
OCR Scan |
as29lv8001mx8/512kx168/512k64kbyte+6 | |
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Contextual Info: Preliminary l3C|4014/bC|4014 Y 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-proteddon during power-up/power-down cycles > Industry-standard 32-pin 256K x 8 pinout > Conventional SRAM operation; unlimited write cycles |
OCR Scan |
4014/bc256kx832-pin10-year | |
1993e
Abstract: A14C bq4011 bq4011-100 bq4011-150
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OCR Scan |
bq4011/bq4011y32kx828-pin10-year+10 | |
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Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy |
OCR Scan |
bq4010/bq4010ybq4010536-bitlithi50n+4 | |
29LVS00
Abstract: 29LV800 AS29 AS29LV800 LI400
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OCR Scan |
8/512kxas29lv8001mx8/512kx1664kbyte+10 | |
TCA 255
Abstract: BQ2001 27217
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OCR Scan |
bq2001bq2001-based400patyp700namax+4 | |
8622C
Abstract: COP8622C COP8642CMHD
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OCR Scan |
cop8640cmh/cop8642cmh28-pin20-pin16-bit+3 | |
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Contextual Info: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy |
OCR Scan |
bq401q/bq4010ybq4011144-bit+2 | |
SANYO M 4515 LU
Abstract: AIM1 d 4515 RC11 FM*ME
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OCR Scan |
stk95192stk9519istk95193stk95194+6 | |
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Contextual Info: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy |
OCR Scan |
bq4011/bq4011y32kx8bq4011144-bit+3 | |
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Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom) |
OCR Scan |
as29lv8001mx8/512kx168/512k64kbyte+6 | |
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Contextual Info: bq4011/bq4011 Y 32Kx8 Nonvolatile SRAM Features General Description V D ata retention in the absence of power The CMOS bq4Qll is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility |
OCR Scan |
bq4011/bq401132kx828-pin10-year+6 | |
BQ2001Contextual Info: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser |
OCR Scan |
bq2001bq2001-based400pa1991e+3 | |
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KM28C64B
Abstract: KM28C64B-15 eefrom
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OCR Scan |
km28c64b/km28c65bkm28c64b/65bkm28c64b/65bikm28c65b+7 | |