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    PCF8572

    Abstract: PCF8582E-2 PCF8571 PCD8582D-2 PCF8570 PCF8581 PCF8582C-2 PCF8582F2 723H PCA8582
    Contextual Info: Philips Semiconductors Preliminary specification 256 x 8-BIT CMOS EEFROMS with l2C-bus interface PCx8582x-2 Family NAPC/PHILIPS SEMICOND b3E D ^53*124 0072751 ^50 » S I C 3 FEATURES • Non-volatile storage of 2 Kbits organized as 256 x 8-bits • Only one power supply required


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    pcx8582x-2pcf8570pcf8571pcf8572+7pcf8581pcf8582e-2pcd8582d-2pcf8582c-2pcf8582f2723hpca8582 PDF

    Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)


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    as29lv8001mx8/512kx168/512k64kbyte+632kwordwrite/s29lv800t-120sias29lv800t-150scas29lv800t-150sias29iv800b-80scas29d/800b-80si PDF

    Contextual Info: Preliminary l3C|4014/bC|4014 Y 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-proteddon during power-up/power-down cycles > Industry-standard 32-pin 256K x 8 pinout > Conventional SRAM operation; unlimited write cycles


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    4014/bc256kx832-pin10-year PDF

    1993e

    Abstract: A14C bq4011 bq4011-100 bq4011-150
    Contextual Info: bq4011/foq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM General Description Features >- D ata retention in the absence of power ► Automatic write-protection during power-up/power-down cycles >• Industry-standard 28-pin 32K x 8 pinout >- Conventional SRAM operation;


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    bq4011/bq4011y32kx828-pin10-year+10bq4011144-bitcondit11yma-150nbq4011-70bq4011y-70bq4011yma-70n1993ea14cbq4011-100bq4011-150 PDF

    Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    bq4010/bq4010ybq4010536-bitlithi50n+4bq4010-70bq4010y-70bq4010yma-70nbq401 PDF

    29LVS00

    Abstract: 29LV800 AS29 AS29LV800 LI400
    Contextual Info: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)


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    8/512kxas29lv8001mx8/512kx1664kbyte+1032kwordas29iv800t80seas29d/800t-100scas29d/800t-100sias29lv800t-120scas29lv800t-120si29lvs0029lv800as29li400 PDF

    TCA 255

    Abstract: BQ2001 27217
    Contextual Info: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser­


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    bq2001bq2001-based400patyp700namax+41991f24-pintca 25527217 PDF

    8622C

    Abstract: COP8622C COP8642CMHD
    Contextual Info: COP8640CMH/COP8642CMH National Semiconductor COP8640CMH/COP8642CMH Microcontroller Emulator General Description Features The COP8640CMH/COP8642CMH hybrid emulators are members of the COPS microcontroller family. The devic­ es offered in 28-pin DIP LCC and 20-pin DIP contain trans­


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    cop8640cmh/cop8642cmh28-pin20-pin16-bit+38622ccop8622ccop8642cmhd PDF

    Contextual Info: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


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    bq401q/bq4010ybq4011144-bit+228-pin10-year PDF

    SANYO M 4515 LU

    Abstract: AIM1 d 4515 RC11 FM*ME
    Contextual Info: NO. * 4515 22593 C W O Û C 1 I r v y o Û O l » ^ « K M t ia iK D /D 2 M A C x □ t # \ A s, • awiiù t / / M A C f 'a - J ' a » ft i ? »• / / • D MAC J3 j: If D2 MAC r ^ - Ki : £ K fc t - < T • IM S T i t ® = A l * « ) * • ( R G B ,/ / - r , ? < A t 4 > 7 ? , f j * 4 * * *


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    stk95192stk9519istk95193stk95194+6stk951921sanyo m 4515 luaim1d 4515rc11fm*me PDF

    Contextual Info: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan
    bq4011/bq4011y32kx8bq4011144-bit+3bq4011-70bq4011y-70bq4011yma-70n PDF

    Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan
    as29lv8001mx8/512kx168/512k64kbyte+632kwordwrite/20scas29lv800t-120sias29lv800t-150scas29lv800t-150si44-pin PDF

    Contextual Info: bq4011/bq4011 Y 32Kx8 Nonvolatile SRAM Features General Description V D ata retention in the absence of power The CMOS bq4Qll is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    bq4011/bq401132kx828-pin10-year+6144-bitout-150nbq4011-70bq4011y-70bq4011yma-70nbq4011 PDF

    BQ2001

    Contextual Info: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser­


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    bq2001bq2001-based400pa1991e+31991d1991f1992g PDF

    KM28C64B

    Abstract: KM28C64B-15 eefrom
    Contextual Info: PRELIMINARY KM28C64B/KM28C65B CMOS EEPROM 8Kx 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64B/65B: Commercial — KM28C64B/65BI: Industrial • Simple Byte Write & Page Write — Single TTL Level Write Signal


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    km28c64b/km28c65bkm28c64b/65bkm28c64b/65bikm28c65b+764-byte100pia--standby40ma--operating1555hkm28c64bkm28c64b-15eefrom PDF