EDO 16M X 32 Search Results

edo dram 50ns 72-pin simm

Contextual Info: UG216E32R4HSG T Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: UG216E32R4HST-6EK Data sheets can be downloaded at www.unigen.com 64M Bytes 16M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Convertor based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

edo dram 60ns 72-pin simm

Abstract: edo dram 50ns 72-pin simm
Contextual Info: UG216E32R4HK S G(T) Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: UG8M163224QRR-6 Data sheets can be downloaded at www.unigen.com EDO MODE DRAM MODULE 64M Bytes 16M x 32 bits EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

Contextual Info: MOTOROLA Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, 1K MCM318165CV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.40µ CMOS high–speed

Contextual Info: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM 64V1605GU-50/-60/-70 HYM 64V1645GU-50/-60/-70 HYM 72V1605GU-50/-60/-70 HYM 72V1645GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information

MCM518165BT60

Abstract: MCM518165BJ60 motorola dram MCM518165B MCM518165B-70 MCM516165BJ60
Contextual Info: MOTOROLA Order this document by MCM516165B/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165B 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed

24C02 wp st

Contextual Info: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM HYM HYM HYM 168pin unbuffered DIMM Module with serial presence detect 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 Preliminary Information

motorola dram

Contextual Info: MOTOROLA Order this document by MCM516165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165BV 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed

IBM0164405B16M

Abstract: IBM0164405BJ3C-50 IBM0164405BJ3C-60 IBM0164405P16M TSOP-32 SA14-4237-02
Contextual Info: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:

IBM0165405B16M

Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
Contextual Info: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:

S609

Abstract: sfhg MCM218165B 891lns
Contextual Info: Order this document MOTOROLA by MCM218165B/O SEMICONDUCTOR TECHNICAL DATA IMx16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refr~~:,. ,;,.’.,> , -.c~,.,. The family of 16M Dynamic RAMs is fabricated using 0.4w CMOS

SL32D4C16M4E-A60V

Abstract: 16MX32
Contextual Info: SL32D4C16M4E-AxxV 16M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D4C16M4E-AxxV is a 16M x 32 bits Dynamic RAM memory module. The SL32D4C16M4E-AxxV consists of eight CMOS 16M x 4 bits DRAMs in 32-pin 400-mil

Contextual Info: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: UG232W3264HSG-6 Data sheets can be downloaded at www.unigen.com 128M Bytes 32M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG-6 is a 32Mbits x 32 EDO

Contextual Info: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin unbuffered DIMM Module with serial presence detect Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte

Contextual Info: UG216W3264HSG T 64M Bytes (16M x 32) 72Pin SIMM based on 16M X 4 DRAM General Description Features The UG216W3264HSG(T) is a 16,777,216 bits by 32 SIMM module. The UG216WE3264HSG(T) is assembled using 8 pcs of 16M x 4 3.3V 4K refresh EDO DRAM in 32 Pin TSOP package and mounted

555E

Contextual Info: Order this document by MCM218165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4|i CMOS high-speed silicon-gate process technology. It includes devices organized as

Contextual Info: UG532W7288JSR 32M x 72 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 16M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES Single 3.3V ± 10% power supply Hyper Page Mode (EDO) operation CAS-before-RAS Refresh capability

cm218

Abstract: MCM21
Contextual Info: Order this document by MCM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as

MCM218165BVJ60

Abstract: 4036B
Contextual Info: MOTOROLA Order this document by MCM218165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4µ CMOS high–speed silicon–gate process technology. It includes devices organized as

4253-01

Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
Contextual Info: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply

IBM0165405BJ5B-50

Abstract: IBM0165405BJ5B-60 IBM0165405P16M IBM0165405B16M
Contextual Info: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode