ED01 Search Results

HT2 material

Abstract: HR76 UW3804X ED016354 272002
Contextual Info: lE-f SYM. e « ZONE i E REVISIONS REV. NO as* B ft DATE NTF.NO. REV-BY ED016354 2002-03-27 S r0 ^ i T /ISSUE OF NEW DWG. A ih S ^ /O u tlin e £ JE ♦ mm D im e n s io n s / NOTES: Leave a minimum cle a ra n ce of 1.6mm from the resin to bend 2. ^ f s b < s a i b T f c i ) it.

7-338728-6

Abstract: ct308
Contextual Info: THIS DRAWI NG IS UNPUBLISHED. DATE: ALL C O P Y R I G H T 2011 RIGHTS R E V IS IO N S - RESERVED. DESCRIPTION ED01-0232-04 16 FEB 04 PDJ EC R - 0 6 - 0 1 4 8 2 4 19 1UN 06 JvdH EC R - 1 0 - 0 2 6 5 4 2 25MAY2011 KK OMR 8 - 8-11 SP RP PART NUMBER REACTIVATION

ED-03

Abstract: ed03 eel -16-2005 ed02 ic 353 SAB1
Contextual Info: CONNOR-lüINFIEL» MbE CORP T> 23143431 m 00003bM T «CNIü AURORA. CONNOR-WINFIELD CORPORATION PHONE IL. 708 FAX T-50-23 (708) 60505 851-4722 851-5040 OSCILLATORS 16 PIN DIP ECL ED01-353-* 1 ED02-353-* SPECIFICATIONS Frequency Range Frequency S t a b 1 1 1t y

Contextual Info: %n * * REVISIO N S a ZONE e SYM. StUÌSMt / ISSUE OF NEW DWG. / A r 2013/04/19 i o / A ÿ f lH lÊ f i' / ISSUE OF REVISED DWG. 30652 u\ T r// . Ä REV. NO, 2 - i íine dimensions B B ft DATE a# # * N TF. NO. R E V .B Y ED014742 2001.08.22 ED026971 2005 *11-11

T545H158M006ATE055

Contextual Info: KEMET High Energy Polymer Pulse Capacitor T545 Series - Polymer, Low ESR, High Energy Preliminary Product Specification Date Code 2nd & 3rd Digit = Week 22= 22nd week 1st Digit = Year 4=2004 5=2005 6=2006 7=2007 8=2008 9=2009 0=2010 1=2011 2=2012 Component Dimensions mm

smd TRANSISTOR code marking 6k

Abstract: marking code E2 p SMD Transistor Transistor sae 103 TRANSISTOR SMD MARKING CODE pv marking code m3 SMD ic siemens PV smd transistor MARKING SMD npn TRANSISTOR DJ smd transistor marking wa TIL 81 application note marking code e2 SMD Transistor
Contextual Info: SIEMENS Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar 1C Features • • • • • • • • • Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable

HD44100 HD44780

Abstract: hd44780 LCD HD44100 lcd lcd display hd44780, hd44100 HD44100 hd44780a lcd hd44780a AC100 HD44780 R303H
Contextual Info: LCD 模块使用手册 目 录 1. 使用范围-2 2. 质量保证-2 3. 性能特点-2 4. 外形图-6

Contextual Info: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer

Contextual Info: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter

ED-012UY

Contextual Info: ED-012UY AlGaInP/GaAs Ultrabright LED Chips Amber Features : Typical Applications : • MOVPE epi wafer • Suitable for new creative products • Snake-back free • Automotive Signal Lamps: Front/ Rear Turns • Traffic Signal Modules/ Traffic Signs • Semi-Outdoor Panels

ED-014UR

Abstract: Opto Tech
Contextual Info: ED-014UR AlGaAs/AlGaAs LED Chips Red „ Typical Applications : „ Features : • AlGaAs/AlGaAs epi wafer • DDH structure • Ultra brightness • Lamp • Display „ Outline Dimensions : Unit: um 335 320 n-Electrode 130 335 n-Electrode n-AlGaAs epi layer

ED-011SR

Contextual Info: ED-011SR AlGaAs/GaAs LED Chips Red Features : Typical Applications : • AlGaAs/GaAs epi wafer • Single heterojunction structure • Lamp • Display • Dot Matrix Outline Dimensions : Unit: um 260 245 n-Electrode n-AlGaAs epi layer p-AlGaAs epi layer

Contextual Info: ED-011AHO AlGaAs/GaAs LED Chips Red Features : Typical Applications : • AlGaAs/GaAs epi wafer • Single heterojunction structure • Lamp • Dot Matrix Outline Dimensions : Unit:um 260 245 n-Electrode n-AlGaAs epi layer p-AlGaAs epi layer n-Electrode

385 iv

Contextual Info: ED-016UYL AlGaInP/GaAs Ultrabright LED Chips Amber Features : Typical Applications : • MOVPE process wafer • Suitable for new creative products • Traffic Signs Modules: Pedestrian Signs • Advertising Signs and Marquees • lndustrial Products Outline Dimensions : Unit: um

ED-014IRA

Abstract: GaAs wafer ED-014
Contextual Info: ED-014IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripherals • high power • photocoupler • low forward voltage • photointerrupter

420um

Contextual Info: ED-018IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 435 420 p-Electrode p-GaAs epi layer

smd UM 08

Contextual Info: ED-011PG GaP/GaP LED Chips Pure-Green Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Display • Dot Matrix Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer 260 p-Electrode 115 275 n-GaP Substrate

Contextual Info: ED-011YGHU GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Display • Dot Matrix Outline Dimensions : Unit: um 235 220 p-Electrode p-GaP epi layer n-GaP epi layer 235 p-Electrode 120 255 n-GaP Substrate Emission area

Contextual Info: ED-011HOU GaAsP/GaP LED Chips Reddish-Orange Features : Typical Applications : • GaAsP/ GaP epi wafer • Lamp • SMD • Display • Dot Matrix Outline Dimensions : Unit:um 260 245 p-Electrode p-Diffusion layer n-GaAsP epi layer p-Electrode 120 260 255

Contextual Info: ED-011RDN GaP/GaP LED Chips Red Features : Typical Applications : • GaP epi wafer • Lamp • SMD Outline Dimensions : Unit: um 210 195 p-Electrode p-GaP epi layer n-GaP epi layer p-Electrode 115 210 265 n-GaP Substrate Emission area 210 n-Electrode Physical Structure :

dd-103

Abstract: dd103 DD102 ED04 marking db6 CD102 CD105 CD110 ED01 13511
Contextual Info: 3 Terminal blocks 3 Screw technology Passthrough, with Telequick universal foot Clip-on mounting on 35 mm 1 7 4 rails and Telequick pre-slotted mounting plate Nominal c.s.a. 4 mm2 a H DB6 CD10p b Dimensions in mm Length a Width (b) 1 Height (H) with 1 rail

p 628 Opto

Abstract: ED-012UORS
Contextual Info: ED-012UORS AlGaInP/GaAs Ultrabright LED Chips Red Features : Typical Applications : • MOVPE epi wafer • Suitable for new creative products • Snake-back free • Automotive Signal Lamps: Center High Mount Stop Lights • Traffic Signs • Semi-Outdoor Panels

Contextual Info: ED-012SO GaAsP/GaP LED Chips Orange Features : Typical Applications : • GaAsP/GaP epi wafer • Lamp • SMD • Display • Dot Matrix Outline Dimensions : Unit:um 285 270 p-Electrode p-Diffusion layer 285 n-GaAsP epi layer p-Electrode 130 255 n-GaP substrate

Contextual Info: ED-011YGH GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Display Outline Dimensions : Unit: um 235 220 p-Electrode p-GaP epi layer n-GaP epi layer 235 p-Electrode 120 255 n-GaP Substrate Emission area