ED GENERAL SEMICONDUCTOR Search Results

ic 2SA1018

Abstract: 2SA1018 2SC1473 2SC147
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

BUK657-500B

Abstract: et 25 diode
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FR ED FET with fast recovery

DIODE M4A

Abstract: j4a diode C25F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices

T106, scr

Abstract: T106D1 S4006LS S2008LS3 2N6565 S2004VS1
Contextual Info: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

1N4586GP

Contextual Info: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed*

T106 thyristor

Abstract: S4008LS3 T106M
Contextual Info: * Se le ka s ge ED Z NI E5 G 39 CO 716 E R #E ct L. U. c Pa ed le Fi TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

T106D1

Abstract: T106, scr T106 thyristor SCR T106 s4006ls3 EC103D 2N6565 S6010LS3 S6010FS21 T107B1
Contextual Info: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A RoHS E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

Contextual Info: * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se s ge ka c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

S4008LS3

Contextual Info: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

T106, scr

Abstract: T106d1 2N6565 S4008FS21 scr To 202 T106 thyristor s4006ls2 T106 scr TO-251 Outline T106B
Contextual Info: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

T106, scr

Abstract: T106 thyristor T106D1 T106 scr EC103B T106B1 3-lead Compak SCR T106 2N6565 S4004VS2
Contextual Info: s ge ka * L. U. ED Z NI E5 G 39 CO 716 E R #E ed ct le Se c Pa Fi le TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

88509

Abstract: 1N4933GP 1N4937GP DO-204AL JESD22-B102 J-STD-002
Contextual Info: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

1N4942GP

Abstract: 1N4948GP DO-204AL JESD22-B102 J-STD-002
Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

1N4933GP

Abstract: 88509 1N4937GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

BA157GP

Abstract: BA159GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: BA157GP thru BA159GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

1N4947GP-E3/23

Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

1N4933GP

Contextual Info: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

1N4933GP

Abstract: 88509 1N4937GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

1N4933GP

Abstract: 1N4937GP DO-204AL JESD22-B102 J-STD-002
Contextual Info: 1N4933GP thru 1N4937GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*

Contextual Info: RGP25A thru RGP25M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t

RGP10G

Abstract: RGP10JE RGP10J-E3/54 DO-204AL JESD22-B102 J-STD-002 RGP10A RGP10M rgp10j-e3 88700
Contextual Info: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t

rgp10g

Abstract: diode RGP 30 JESD22-B102D RGP10J-E3/54 RGP10K DO-204AL J-STD-002B RGP10A RGP10M RGP10J
Contextual Info: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t

RGP10J-E3/54

Abstract: rgp10g rgp10j diode DO-204AL JESD22-B102D J-STD-002B RGP10A RGP10M
Contextual Info: RGP10A thru RGP10M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t