2SC147 Search Results

2SC1472

Abstract: DSA003778
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 2. Collector 3. Base 3 2 1 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

2sc1472

Abstract: Hitachi DSA002754
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

2sc1473

Abstract: 2sa1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2sc1470

Contextual Info: !j£Ti£iy ^zmi-Conductoi Lpioducti, dna. tx ^j 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC1470 SILICON NPN POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Contextual Info: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage

2SA1018

Abstract: 2SA1767 2SC1473 2SC1473A SC-43A 2SA1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2sc1815 equivalent

Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050

2SA1018

Abstract: 2SA1767 2SC1473 2SC1473A SC-43A 2SA1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

ic 2SA1018

Abstract: 2SA1018 2SC1473 2SC147
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

Contextual Info: 2SC1476 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)38 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2724

Abstract: 2SC3346 2SD4028 2SC2258 2SC400 2sc2636 2SD1111 4017 2SC3075 2SC3460
Contextual Info: - m ¡g T y p e No. 2SC 3999 it S' 2SC 4000 2SC 400 1 ^ 0 a 0 a 0a 2SC 4002 ^ = 2SC 4003 J ^ = n fâ T 2SC 4004 S H SANYO 2SC4218 & 2SC3751 U B H TOSHIBA NEC B HITACHI ±L s * ± a FUJITSU tä T MATSUSHITA h m M ITSUBISHI □ — A ROHM 2SC1473 2SC2551 2SC3672

Contextual Info: , Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.S.A. 2SC1471 T03 Silicon NPN High Voltage Switching Transistor SPECIFICATION GENERAL DESCRIPTION; ELECTRICAL CHARACTERISTICS - CARACTERISTIQUES ELECTRIQUES *

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 • Features d p

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 • Features d

2SC1472

Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington HITACHI Application High gain amplifier Outline TO-92 (1) I • 3 340 2 1 r- O 3 1. Emitter 2. Collector 3. Base y -*- 0 2 K*_ K -o 1 ^' 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C)

2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Contextual Info: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage

2SC1472

Abstract: 2SC1472KATZ-E 2SC1472KBTZ-E PRSS0003DA-A SC-43A 2SC1472KB
Contextual Info: 2SC1472 K Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 3 1. Emitter 2. Collector 3. Base 2 1 3 2 1 Absolute Maximum Ratings