ED 65A Search Results

Contextual Info: 21 PM S/UNI -4xD3F Data Sheet Released 12 :2 0: PM7349 S/UNI4xD3F ay ,2 0J ul y, 20 05 TM co n W ed ne sd S/UNI-4xD3F Data Sheet Released Issue 5: June 2001 Do wn lo ad ed by Co nt e nt T ea m of Pa rtm in er In Quad J2, E3 and DS-3 Framer Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use

040i

Abstract: MARKING WL 604I 250-I 030-I 134i
Contextual Info: ER 4 Width/Larghezza 5mm 304 129i Width/Larghezza 6mm 304 139i MR 35 44.5 Feed-through terminals and accessories Morsetti passanti ed accessori ER 2.5 ER type terminals are manufactured from thermoplastic raw materials. Beige is the main colour, 8 different

SM6A27

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT SM6A27 TRANSIENT SUPPRESSOR SURFACE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR Zener Voltage - 27.0 Volts Peak Pulse Current - 90.0 Amps DO-218 * ED T FEATURES 0.628 16.0 0.592(15.0) EN T PA 0.539(13.7) 0.524(13.3) 0.116(3.0)

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . BY ^ C O COPYRIGHT 4 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 REVIS IO N S - - R E S ER V ED . P LTR 0 2 D E S C R IP TIO N DATE REVISED PER E C O - 0 9 - 0 1 6 882 DWN APVD HMR OR 21 JUL09

Contextual Info: TH IS DRAW ING IS U N P U B L IS H E D . COPYRIGHT BY TYCO R ELEAS ED ELECTRONICS CORPORATION. FOR ALL PUBLIC ATION RIG HTS LOC - RESERVED . FT DIS T R E V IS IO N S D E S C R IP T IO N LTR A RELEASED DATE DWN APVD 02APR02 EZ DB NOTES 1 MATERIAL HOUSING - POLYMIDE 6 U L 9 4 V - 2

Contextual Info: Selection Gu RF/Microwave •I ■ ■ Non-lonizing Radiation Hazard instrumentation m CO M P AC T-R U G G ED S U R V E Y M ETER ■MODEL RESPONSE DETECTION FREQUENCY RANGE DYNAMIC RANGE 1 2001 Isotropic E-Field 3 MHz to 1 GHz 10 to 1000 V/m IR F/B A D G E-P ER S O N A L M O N ITO RS

kn sot23

Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
Contextual Info: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ÎÎPD178P018A 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The JuP D 178P 018A Note is a device in w hich the internal m ask ROM of the ¿¡PD178018A is replaced with a one­ tim e PROM or EPROM. Because this device can be program m ed by users, it is ideally suited for system evaluation, sm a ll-lo t and m ultipledevice production, and early developm ent and tim e-to-m arket.

Contextual Info: AM PSS <50000 FAM ILY ASTEC DJBD DIST RI BUT ED P O W E R SERIES O u tp u t O u tp u t In p u t ♦ H ig h e ffic ie n c y : u p to 9 0 % V o lta g e 24V C u rre n t V o lta g e • 5 0 0 K H z fix e d fre q u e n c y , z e ro v o lta g e s w itc h in g 8 .3 A

crow ct 100 271

Contextual Info: LIN Doc # ; 1664 i i N f ï M L X 1 6 6 4 /6 4 A , L X 1 6 6 5 /6 5 A i y Dual Output P W M C o n tro lle rs M I C R O E L E C T R O N I C S T he I n f i n i t e P o w e r I n n o v a t i o n o f P D r o d u c t i o n DESCRIPTION The L X 1664/64A a n d LX1665/65A are

KM28C64A-20

Contextual Info: KM28C64A/KM28C65A CMOS EEPROM 8Kx 8 Bit CMOS Electrically Erasable PROM GENERAL DESCRIPTION FEATURES O perating Tem perature Range — KM28C64A/65A: Commercial — KM28C64AI/65AI: Industrial Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal

SMD TRANSISTOR 22w

Contextual Info: LIN D o c # : 1 6 6 4 L X 1 6 6 4 /6 4 A , L X 1 6 6 5 /6 5 A D ual O T h e I n f i n i t e P o w e r I n n o v a t i o n o f P utput F w i n C ontrollers D r o d u c t i o n DESCRIPTION The LX1664/64A and LX1665/65A are monolithic switching regulator con­

Contextual Info: KM28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal

GJ 96

Abstract: v539 71051 G 655E
Contextual Info: 42*+2{3 <>.7585-=>;1 58=1;7105-=1 :9@1; ;16-A 2EBOPMEN U 65A koal[`af_ [YhYZadalq U 65cU aehmdk] oal`klYf\ ngdlY_] .Z]lo]]f [gad Yf\ [gflY[lk/ U Sqh] 7 e]]lk UDE 5<551 5;86 j]af^gj[] afkmdYlagf U Ha_`dq ]^^a[a]fl eY_f]la[ [aj[mal ^gj `a_` k]fkalanalq? 755eV

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

Contextual Info: CY7C419/21/25/29/33 V CYPRESS Features Functional Description • 256 x 9, 512 x 9 ,1 ,0 2 4 x 9, 2048 x 9, and 4096 x 9 FIFO buffer mem ory • D ual-port RAM cell • A synchronous read/write • H igh-speed 50.0-M H z read/write ind ep en d en t o f depth/width

Contextual Info: euoec BSM 35 GB 120 DL F IGBT Power Module Preliminary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 35 GB 120 DL 1200V 65A Package h Ordering Code HALF BRIDGE 1 Maximum Ratings

vqe 24 e

Abstract: vqe 24 d
Contextual Info: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70

2482h b3

Abstract: 3204H PL 2305H PMC-2021098 1A27H 171bh 1D18 336FH 1733H 3583H
Contextual Info: 14 PM TUPP 2488 ASSP Data Sheet Register Description Released ob sd ay ,2 8O ct TUPP 2488 er ,2 00 4 12 :5 9: PM5364 rtm in er In co n Th ur SONET/SDH Tributary Unit Payload Processor For 2488.32 Mbit/s Interfaces Released Issue No. 6: August 2004 Do wn

448H-44BH

Abstract: OB1001 erx02 ERP1N
Contextual Info: PM7346 S/UNI-QJET DATASHEET ISSUE 6 SATURN QUAD USER NETWORK INTERFACE FOR J2, E3, T3 :3 4: 40 PM PMC-960835 00 4 12 PM7346 ,2 TM er S/UNI- ,2 9O ct ob QJET er In co n Fr id ay S/UNI-QJET DATASHEET PROPRIETARY AND CONFIDENTIAL ISSUE 6: MAY 1999 Do wn lo ad

Contextual Info: 123456754 12 !8 "##455 1DEF467#A$A%F7#6&5 12 !8 123456754 234567389 'A 564AD5A756A65#&ECDA9C#5ACA !*A)C6A7+6C95E 657#77

a6070m

Abstract: a60 81
Contextual Info: PRELIMINARY - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 V 1 6 1 65A-60/70/60L/70L CMOS 1M X 16BIT HYPER PAGE MODE DYNAMIC RAM CMO S 1,048,576 x 16BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16165A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: T O SH IB A TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC80Q7-H LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: 234567869A 23BCDEFDC 9DDECDF2 , ADEDC  DE!"#"F$F%&FD F$" !E E"D DCFD!EC!##F"& ED$' D$"&("FFC!!DEC BDE&F$(E#DDEFCEF%F B$F$EDDCC*D#(DEEDC%"D%D$FE