EBSM Search Results

Contextual Info: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix

Contextual Info: SbE D DATATRONICS • Ebsmas □□□□sis o ■ SER IES SM6760 SURFACE M O U NTED DIGITAL DELAY M O D U LES • 14 Pin SO IC Package • Designed For Surface Mounting • T T L and D T L Compatible • 5 Equally Spaced Taps Specifications • • • •

Contextual Info: DATATRONICS 2bE D m EbSm ôS DD00EÔ5 5 SERIES 624 5-TAPS 16 PIN H-CMOS DIGITAL DELAY MODULES • 16 Pin D IL Package «H-Cmos Logic « 5 Equally Spaced Taps Specifications: • • • • • • • • • • • 4.75 to 5.25V D C 3,2v ' 0.9v 4.5v 0.1 v

Contextual Info: DATATRONICS EbE D • Ebsmas oooosn 3 T q-^-13 ■ - SERIES DL6200 DIGITAL DELAY MODULES • 16 Pin Package • TTLand DTL Compatible • 5 Equally Spaced Taps Specifications • • • • • • • • • • Supply Voltage Logic 1 Input Current Logic 0 Input Current

Contextual Info: T 2bE D DATATRONICS Ebsmas o o d o e t m b • T :- ' 4 n - l 3 S E R I E S 6 3 3 8 PIN D U A L H -CM O S D I G I T A L D E L A Y M O D U L E S t • • 8 Pin DIP Auto-insertable • Two Independent Equal Delay Units Per Package H-Cmos Logic Specifications:

marvell 88w8787

Abstract: 88w8787 WYSBCVGXA wysbmvgxb WYSBMVGX8 EYSMAC UART bluetooth marvell WLAN 88W87 GYSFFMAXX
Contextual Info: Wireless Module Technology Module Part Number WiFi: Marvell 88W8787 Interface Bluetooth FM Radio Crystal Antenna on Board Board Certifications RF Eval Daughter Board Dimensions Wireless Interface Board Module Part Number GYSFFMAXX Eval Board GKSFFMAXX Module Part Number

4.7 MF 50v CAPACITOR

Abstract: capacitor 0.47 j 100 sw 0.1 MF RADIAL CAPACITOR EBSM
Contextual Info: ALUM INUM ELECTROLYTIC CAPACITORS INDEX Series Nam e Special purpose Low C apacitance 6.3 ~ 450V 0.1 - 10,000 mF O perating T em perature - 40 ~ + 1 5°C Page C E D SM 85°C, Very sm all general use (S m aller than SEM ) 6.3 - 50V 33 ~ 15,000 mF - 40 - + 85°C

samsung pram

Contextual Info: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K KM41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

2450DP15K5400

Contextual Info: "High Frequency Ceramic Solutions" 2.45 / 5.4GHz Ceramic Chip Diplexer LPF/BPF type P/N 2450DP15K5400 Detail Specification: 12/15/2011 Page 1 of 2 General Specifications 2450DP15K5400 Part Number Return Isolation Loss (dB) (dB) Passband (MHz) Insertion Loss (dB)

samsung pram

Abstract: t03h 256KX4 KM44C256BL KM44C256BL-10 Scans-0014168 T462
Contextual Info: SA M S U N G E L E C T R O N I C S 42E INC D B TTbMm a 00100=13 KM44C256BL T B 1 S I1 6 K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page .Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44G256BL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its de­

Contextual Info: FEATURES • ¡ l É U iU ls l ■ 3.3V and 5V power supply options ■ 1.12GHz maximum VCO frequency ■ 30 to 560MHz reference input operating frequency ■ External 2.0GHz VCO capability ■ Low jitter differential design ■ Frequency doubler mode ■ PECL Differential output

Contextual Info: OPA337 OPA2337 OPA338 OPA2338 B U R R -B R O W N For most current data sheet and other product information, visit www.burr-brown.com M/croSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier" Series FEATURES DESCRIPTION • McroSIZE PACKAGES: SOT-23-5

E472M

Abstract: CEBSM1V470M CEBSM CEBSM1A221M CEBSM1V331M CEBSM1V100M CEBSM1H471M CEBSM1 CEBSM2D470M CEBSM2A470M
Contextual Info: UNITED CHEMI-CON S U B S I D I A R I E S OF N I P P O N ALUMINUM ELECTROLYTIC CAPACITORS EBSM SERIES C H E M I - C O N . I NC EBSM SERIES MINIATURE RADIAL TYPE FOR + 105° C • FEATURES 1. Miniaturized, 1 — 2 rank smaller than USM series. 2. Suitable for miniaturizing electronic equipment.

Contextual Info: SAM S UN G E L E C T R O N I C S INC 42E ]> H KM23C4100H 7^4142 OGlllMT 1 CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.)

Contextual Info: 6 REV. ZONE 5 I 7 LTR B I DATE DESCRIPTION A mmmmm Ll/Si/00 REVISER APPD P fe rry ORDERING INFORMATION B AT 1 Q* J L (2 ) (3 ) - _Q_ _Q (5 ) (6 ) (4 ) Q_ _ 0 _ — J ± _ (7 ) (8 ) (9 ) 1. SERIES NUMBER : 8AT : HIGH DENSITY 1.27(.D50") SPACING MINI CONNECTOR STRAIGHT P.C.B. TYPE

Fk capacitor philips

Contextual Info: Philips Semiconductors Product SDecificatlon PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other