EAS 46 Search Results

6ES5 441-7LA11

Abstract: 451-7LA11 6ES5 420-7LA11 441-7LA11 6ES5 451-7LA11 siemens s5 S5-115U 420-7LA11 6ES5 430-7LA11 6ES5 siemens
Contextual Info: Interface System passive interfaces passive interfaces for S5-115U Digital I/O Dimensions mm : W x H x D 128.5 x 80 x 61 Approvals: Description Digital I/O with LED Digital I/O without LED Type EAS-UE/D-L-115 EAS-UE/D-115 Wiring diagrams, dimensions See page 571

OM55N10NK

Abstract: OM60N10NK OM75N05NK OM75N06NK
Contextual Info: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)

Contextual Info: IRHM7054, IRHM8054 Devices Pre-Irradiation  Repetitive Rating; Pulse width limited by … Total Dose Irradiation with VGS Bias. maximum junction temperature. Refer to current HEXFET reliability report. ‚ @ VDD = 25V, Starting TJ = 25°C, EAS = [0.5 * L * IL2 ]

mur 460 data

Abstract: MUR460 BL MUR405 MUR460 mur 600
Contextual Info: BL GALAXY ELECTRICAL MUR405 - - - MUR460 VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A SUPER FAST RECT IFIER FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents

MUR460 BL

Abstract: mur 460 data mur 600 MUR450 MUR 460 MUR405 MUR460 MUR420-MUR450
Contextual Info: BL GALAXY ELECTRICAL MUR405 - MUR460 VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A SUPER FAST RECT IFIER FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents

a1s package

Abstract: 182T2 block diagram of VCD block diagram of VCD and its functions cyclic redundancy check LRI512 ISO15693 1 out of 4 inventory request CRC16 ISO15693 LRI512 ISO10373-7
Contextual Info: LRI512 ISO 15693 standard compliant, 13.56 MHz, 512 bit, high-endurance EEPROM TAG IC with EAS Not For New Design Features • ISO 15693 standard: fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■ To the LRI512: – 10% or 100% ASK modulation using:

182T2

Abstract: CRC16 ISO15693 LRI512 ISO103
Contextual Info: LRI512 ISO 15693 standard compliant, 13.56 MHz, 512 bit, high-endurance EEPROM TAG IC with EAS Not For New Design Features • ISO 15693 standard: fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■ To the LRI512: – 10% or 100% ASK modulation using:

Amphenol ecomate Assembly instructions

Abstract: DIN EN 60999-1 circular connector C016 C16-1 EN 60352 c01610d003
Contextual Info: Amphenol Amphenol-Tuchel Electronics GmbH Circular Connectors ier eas an se m o as t r e uick dq |mate by Amphenol bl e The Company Amphenol-Tuchel Electronics GmbH is a member of the USA based Amphenol Corporation. With our own global presence we offer our customers exceptional

UC 493

Abstract: IFP50N06
Contextual Info: IFP50N06 N-Channel MOSFET Features • RDS on (Max 0.023 Ω)@VGS=10V • Gate Charge (Typical 25nC) • Maximum Junction Temperature Range (175 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)

mur 460 data

Abstract: MURS405-MURS460 mur 600 mur 1250 Mur 460
Contextual Info: MURS405-MURS460 Surface Mount Rectifiers VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A SMC DO-214AB Features 7.5± 0.25 Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents 5.8± 0.3 3.0± 0.15 Low cos t

FKv550n

Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

fkp*253

Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS

IFP2N60

Contextual Info: IFP/IFD/IFU2N60 N-Channel MOSFET Features • RDS on (Max 5.0 Ω)@VGS=10 V • Gate Charge (Typical 9.5 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG TJ Notes Parameter Drain to Source Voltage

2SK2701A

Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

2sk30

Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

diode code v3c

Contextual Info: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ

Contextual Info: POW ER Y TO US EAS E BL E Advanced Multi-GNSS Simulator FUTURE PROOF L FU GSG-6 Series AFF O R D A Upgradable to all constellations and signals • Multi-GNSS, Multi-Frequency Simulator • GPS standard, new L2C, L5 GLONASS, Galileo, and BeiDou • Simultaneous multi-frequency P-code

IFP75N08-TSe

Abstract: IFP75N08
Contextual Info: IFP75N08 N-Channel MOSFET Features • RDS on (Max 0.015 Ω)@VGS=10V • Gate Charge (Typical 80 nC) • Maximum Junction Temperature Range (175 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

diode v3c

Abstract: marking v3c
Contextual Info: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ

Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G  D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS

Contextual Info: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ

diode code v3c

Abstract: marking v3c
Contextual Info: VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF AV 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ

mur 460 data

Abstract: MUR460 DO-27 mur 600
Contextual Info: MUR405-MUR460 Super Fast Rectifiers VOLTAGE RANGE: 50 - 600 V CURRENT: 4.0 A Features DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Eas ily cleaned with alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0