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    UC 493

    Abstract: IFP50N06
    Contextual Info: IFP50N06 N-Channel MOSFET Features • RDS on (Max 0.023 Ω)@VGS=10V • Gate Charge (Typical 25nC) • Maximum Junction Temperature Range (175 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C)


    Original     		ifp50n06300usifp50n06-tseuc 493 PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		il311anmtda8362bila1519b1qiff4n60+6in1307ntda8890il311anil91214anmc74hc123anil258d PDF