IFP2N60 Search Results

IFP2N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IFP2N60 Contextual Info: IFP/IFD/IFU2N60 N-Channel MOSFET Features • RDS on (Max 5.0 Ω)@VGS=10 V • Gate Charge (Typical 9.5 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG TJ Notes Parameter Drain to Source Voltage	Original	IFP/IFD/IFU2N60 300us, IFP2N60-TSe IFP2N60	PDF
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original		PDF

Catalog Datasheet

Type

Document Tags

PDF

IFP2N60

Contextual Info: IFP/IFD/IFU2N60 N-Channel MOSFET Features • RDS on (Max 5.0 Ω)@VGS=10 V • Gate Charge (Typical 9.5 nC) • Maximum Junction Temperature Range (150 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG TJ Notes Parameter Drain to Source Voltage

Original

IFP/IFD/IFU2N60 300us, IFP2N60-TSe IFP2N60

PDF

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

Original

PDF