E036 Search Results

sdr sdram reference

Abstract: sdr sdram
Contextual Info: SDR SDRAM E0364M20 Ver.2.0 (Previous Rev.0.3e) June 2004 (K) Japan DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.

Contextual Info: SDR SDRAM E0364M11 Ver.1.1 (Previous Rev.0.3e) February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.

Contextual Info: Product Specifications E036A- PNMNM ETS036­50T SureFlex Jumper with interface types N Male and N Male, variable CHARACTERISTICS General Specifications Body Style, Connector A Body Style, Connector B Cable Family Interface, Connector A

das5v4

Abstract: 1C08 LM2465 E0361
Contextual Info: These drawings and specifications are the property of Densitron Corporation and may not be reproduced, copied or used without written permission 1. 2. 3. 4. REVISIONS REV DESCRIPTION DATE APPROVED - E0361 Specification subject to change without notice. All dimensions and specifications apply to standard modules. This information may vary for modules with optional

saa 1900

Contextual Info: EUROPEAN POWER SUPPLIES © ® CB—CERTIFICATE INPUT: 220-230 VAC/50 Hz DC OUTPUT AC OUTPUT MODEL NO. OUTPUT VOLTAGE VDC CURRENT OUTPUT mA UNIT SIZE MODEL NO. E0330BO E0360BO * E0410BT E0430BO E0460BO * E0610BT E0630BL E0650BL E0660BO E061ABT E0612ABO

Contextual Info: Product Specifications E036A-PNMNM ETS036­50T SureFlex Jumper with interface types N Male and N Male, variable length CHARACTERISTICS General Specifications Body Style, Connector A Straight Body Style, Connector B Straight

1C08

Abstract: ARC 2686 ntn 59 LM4465
Contextual Info: These drawings and specifications are the property of Densitron Corporation and may not be reproduced, copied or used without written permission 1. 2. 3. 4. REVISIONS REV DESCRIPTION DATE APPROVED - E0362 Specification subject to change without notice. All dimensions and specifications apply to standard modules. This information may vary for modules with optional

DDR266A

Abstract: DDR266B DDR333B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52UC8AKDA-7A EBD52UC8AKDA-7B
Contextual Info: PRELIMINARY DATA SHEET 512MB DDR SDRAM SO DIMM EBD52UC8AKDA 64M words x 64 bits, 2 Ranks Description Features The EBD52UC8AKDA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 256M

DDR2-533

Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.

m077

Contextual Info: R1514x Series AEC-Q100 Grade2 Certified 150 mA Voltage Regulator Wide Input Voltage Range for Automotive Applications NO. EC-152-140220 OUTLINE The R1514x is a CMOS-based positive voltage regulator (VR) IC featuring 150 mA output current. It is specifically designed for automotive applications. The R1514xxxxB has features of high input voltage and

spice model three phase TRANSFORMER

Abstract: AD9742ACP CVSD modulator/demodulator AD9740ACP AD9744ACP AD9748ACP AD9751 AD9753 AD9755 AD9772
Contextual Info: AN-642 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel T : 781/329-4700 • Fax: 781/326-8703 • www.analog.com Coupling a Single-Ended Clock Source to the Differential Clock Input of Third-Generation TxDAC and TxDAC+® Products

AN-647

Abstract: OP AMP EVAL-ADOPAMP-2R
Contextual Info: AN-647 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Universal Evaluation Board for High Speed Op Amps By John Ardizzoni Analog Devices’ high speed universal evaluation board

Contextual Info: J A E ELECTRONICS '3 B S 3 Ï6 5 J INC A E 40 1 3 4 ^ 5 Ö4D D E L E C T R O N IC S IN C DGDOBDb 84D 5 0 0 306 D COMPLIANT E PIN TYPE • Female: Wire wrap post M E03-M*S10-M4 R*-A* 3.740 95 max. . “I ''M il, . Cross sectio n of Z Pin

Contextual Info: DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AAFA 64M words x 64 bits, 2 Ranks Features The EBD52UC8AAFA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR SDRAM sealed in TSOP package. Read and write operations are

TDA 9394

Abstract: CI TDA 1195 Burr Brown PWR 74 Burr Brown PWR 71 tda 7054 TDA 8375 pin voltage tda 8690 VM007 VLSI csc 2314 TDA 2970
Contextual Info: OCT 2 4 !99 VLSI T e c h n o lo g y , in c. VM007 DATA ENCRYPTION PROCESSOR FEATURES DESCRIPTION • Complete cryptographic processing system on a single chip Class 3 ESD protection above 4000V) • Supports clock frequencies to 30 MHz Pending validation by National

DATA VISION p73-1

Abstract: ccd f282 IL311 rjp63f3 thyristor handbook Toshiba television Model TAC IEC825-1 MIPS16 DM33 TMP1940CYAF
Contextual Info: 32-Bit TX System RISC TX19 Family TMP1940CYAF/TMP1940FDBF MIPS16, application Specific Extensions and R3000A are a trademark of MIPS Technologies, Inc. The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our

Contextual Info: DATA SHEET 256MB Unbuffered DDR SDRAM DIMM EBD25UC8AAFA 32M words x 64 bits, 1 Rank Description Features The EBD25UC8AAFA is 32M words × 64 bits, 1 rank Double Data Rate (DDR) SDRAM unbuffered module, mounting 8 pieces of 256M bits DDR SDRAM sealed in

Contextual Info: DATA SHEET 256MB Unbuffered DDR SDRAM DIMM EBD25EC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBD25EC8AAFA is 32M words × 72 bits, 1 rank Double Data Rate (DDR) SDRAM unbuffered module, mounting 9 pieces of 256M bits DDR SDRAM sealed in

STK 2028

Abstract: RTL 2832 STK 4133 II gc 7137 ad STK 5333 stk 5392 stk 5490 stk 2265 STK 5474 STK 4197
Contextual Info: Mon Feb 6 10:03:42 1995 Page 1 'MENSCH COMPUTER ROM SOFTWARE' 'IRQVCTRS.ASM-IRQ VECTOR EQUATES FOR WDC65C265' 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : irom2.asm Output Filename : irom2.obj

EBD52UC8AAFA-7B

Abstract: EBD52UC8AAFA M2S56D30ATP-75
Contextual Info: DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AAFA 64M words x 64 bits, 2 Ranks Features The EBD52UC8AAFA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR SDRAM sealed in TSOP package. Read and write operations are

DDR266B

Abstract: EBD25UC8AAFA-7B M2S56D30ATP-75
Contextual Info: DATA SHEET 256MB Unbuffered DDR SDRAM DIMM EBD25UC8AAFA 32M words x 64 bits, 1 Rank Features The EBD25UC8AAFA is 32M words × 64 bits, 1 rank Double Data Rate (DDR) SDRAM unbuffered module, mounting 8 pieces of 256M bits DDR SDRAM sealed in TSOP package.

GHM1540B224K250

Abstract: Amplifier Research DC2000 GRM40 COG GRM615C0G010B50 GHM1030R471K630 GHM1535B TC 270D GHM1540 grm39 cog GHM1030R102K630
Contextual Info: H1 00.7.18 9:44 AM y [ W 1 This is the PDF file of catalog No.C02E-6 C02E6.pdf 00.7.18 CHIP MONOLITHIC CERAMIC CAPACITOR CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-6 This is the PDF file of catalog No.C02E-6 C02E6.pdf 00.7.18

MS3212

Abstract: hc 40201 MS3213 MS3213-1 MS3212-1 MS3212-31 MS3212-11 MS3212-2 MS3212-15 MS3212-21
Contextual Info: CROSS REFERENCE GOVERNMENT N.S.N. TO APM PART NUMBER GOVERNMENT N.S.N. APM PART NO. MIL SPEC NO. / QPL'D 1005-01-148-6507 ST 1/4-28 x 3/8 1005-01-158-4498 1113/60 1015-00-041-0370 HE 1015 M5423/14-05 1025-01-091-3590 4085 3192291 1075-00-508-4635 N 9065 x 3/8

Contextual Info: Technical Information ModSTACK 6MS1600R17KE3-3WAH-B9C18VTIOIN Vorläufige Daten preliminary data Key data 3x 974A rms at 690V rms, water cooled General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and