E-BAND MMIC Search Results

Vl02

Abstract: 9.75 GHz oscillator
Contextual Info: D a ta S h e e l ^ EiMhDIGICS Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs ÍC Source _ REV 2 FUNCTIONAL i? ®! Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability

ku-band 15 watt SSPA

Abstract: RF Prime micro-d 15 pin connectors "ku band" amplifier micro-d connectors Scans-0021413 WR-62 waveguide SSPA C Band mmic A amplifier 250W
Contextual Info: Ku-Band Hiqh Performance P o w e r/^ Q ifie r 25 Watt This amplifier is a 25W linear Ku-band SSPA that is based on wideband driver modules and a balanced Ku-band MMIC output stage. This 14.40-15.4 GHz amplifier includes a T IL enable / disable function, a temperature compensation

Contextual Info: Data Sheet E f e D h D O AKD12030 Ku-Band DBS MMIC Downconverter G Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter • 6 dB Noise Figure • 35 dB Conversion Gain • Small Size • Low Cost • High Reliability • Covers Japanese BS Band

E-band mmic

Contextual Info: HMC7447 v00.0913 POWER DETECTOR - CHIP E-BAND DETECTOR 71 - 86 GHz Typical Applications Features The HMC7447 monitors Tx Output Power for: Frequency: 71 - 86 GHz • E-Band Communications Systems Input Power Range: -0.5 to +23.5 dBm • Test Equipment & Sensors

Contextual Info: Data Sheet v E w W j G I Ç v ; ' : " " 1 Ku-Band DBS MMIC Downconverter S Your GaAs 1C Source Prellmi“ ^ The ANADIGICS Ku-Band MMIC Downconverter is a low-cost, high volume GaAs MMIC which is suitable for use in Ku-Band DBS systems, where low power consumption is required. The AKD2401 covers all Astra

Contextual Info: •I QÔ14S77 00DDLÜ3 321 E mBOGO* AKD2806 Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs IC Source REV 2 FEATURES FUNCTIONAL BLOCK DIAGRAM Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability Surface Mount Package

CDH60

Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Contextual Info: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High

ku-band lnb block diagram

Contextual Info: . - E • 0Ö14577 □□DG77Ö m m oc ” lüfl AKD2806 Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION REV 3 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability

MMIC cross

Contextual Info: SILICON MMIC NEC UPC1685B/G PRELIMINARY Wide-Band Mixer/Oscillator MMIC FE A TU R E S P H Y S IC A L D IM E N S IO N S Units in mm • WIDE-BAND OPERATION: DC to 890 MHz UPC1685B • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

vD1A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band

ka-band amplifier

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band

LNA ka-band

Abstract: MITSUBISHI CAPACITOR
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band

Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC Buffered C-Band VCO HMC131 PR E LIM IN AR Y DATA SHEET, M AY 1992 Features 1 GHz TUNING RANGE SINGLE +5V SUPPLY OPERATION NO EXTERNAL VARACTOR REQUIRED General Description The HMC131 chip is a C-Band VCO with on-chip

Contextual Info: f i . Ki V HMC131C8 MICROWAVE CORPORATION I GaAS MMIC SMT BUFFERED C-BAND VC F E B R U A R Y 1998 Features General Description 1 GHz T U N IN G RAN G E The HMC131C8 is a SM T C-Band VCO S IN G L E + 5 V S U P P LY O P ER ATIO N with on-chip buffering for improved load iso­

Contextual Info: E AWT918 TX POWER MMIC h m p iG ic s ' A dvanced Product Information Your GaAs IC Source RevO CELLULAR/PCS Dual Band GaAs Power Amplifier 1C DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800,

Z311

Abstract: MGF7104
Contextual Info: MITSUBISHI D IS CR ET E SC blE ]> □ □ m cÎD2 TME • H I T S ^ Amitsubishi GaAs MMIC MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7100 Series are monolithic microwave integrated circuits for use in 900MHz band

x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Contextual Info: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications

TQP7M4002

Abstract: LB514
Contextual Info: TQP7M4002 Advance Datasheet 3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC Description: Package Outline : The TQP7M4002 is a quad-band capable 3V power amplifier MMIC for GSM applications. Fabricated with a high-reliability InGaP GaAs HBT technology, the MMIC supports GPRS Class12 operation. By virtue of advanced design techniques,

MMIC code D

Abstract: MMIC code 61 J10003 mmic code R mmic code h
Contextual Info: MICRONETICS INC 34E D 61 blll742 Q00034? 7 H M R O Single Pole Four Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) DES6 EH0 f l f f e .Si. j. •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed

x-band mmic

Abstract: DA10 DA11 MA03503D
Contextual Info: V 1.00 MA03503D X-Band Gain/Phase Control MMIC 8.0 –11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5-bit Attenuator Parallel Control Input 50 Ω Input and Output Impedance Self-Aligned MSAG MESFET Process

MA03501D

Abstract: x-band mmic
Contextual Info: V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 –11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5-bit Attenuator Serial Control Input 50 Ω Input and Output Impedance Self-Aligned MSAG MESFET Process