DUAL BAND GAAS POWER AMPLIFIER DIE Search Results

transistor 1800MHz

Contextual Info: SONY PRELIMINARY DATA SHEET Dual-Band 3 Volt Power Amplifier for GSM900/1800 Applications CXG1047FN - Dual Band The CXG1047 Dual Band GaAs PA is a 3 Stage Power Amplifier that may be used for both GSM900 and GSM1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier

irf9424

Abstract: irf942 CXG1047FN DCS1800 GSM900 L8152
Contextual Info: CXG1047FN Dual-Band 3V Power Amplifier for GSM900/1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one

irf942

Abstract: irf9424 1760 dual fet 1800mhz rf frequency power amplifier circuit CXG1047FN DCS1800 GSM900 L8152
Contextual Info: CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one

irf942

Abstract: irf9424 CXG1047FN DCS1800 GSM900 DCS-1800
Contextual Info: CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications For the availability of this product, please contact the sales office. Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum

CHA6517

Abstract: fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,

Contextual Info: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,

Contextual Info: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/

x-Band High Power Amplifier

Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
Contextual Info: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,

x-Band High Power Amplifier

Abstract: chip 8205 8205 8205 datasheet CHA6517 x-band power amplifier S 8205 fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,

pt 11400

Abstract: kaba
Contextual Info: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band

AP124-93

Abstract: AP125-94 TSSOP-20 2.7 3.5 s band
Contextual Info: Preliminary GaAs IC 3 Stage GSM Power Amplifier AP125-94 TSSOP-20 Features • Single Supply, +3.5 V Operation 0.0256 0.65 mm BSC PIN 20 ■ Output Power of 35 dBm 0.009 (0.22 mm) REF. 0.173 (4.40 mm) ± 0.004 (0.10 mm) ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage

Contextual Info: ESAlpha GaAs 1C 3 Stage GSM Power Amplifier AP125-94 TSSCP-20 Features • Single Supply, +3.5 V Operation 0.0256 0.65 mm BSC -0.009 (0.22 mm) REF. P I N 2 0 ^ ^ nQI| M ■ Output Power of 35 dBm 0.173 (4.40 mm) ±0 .004 (0.10 mm) ■ Efficiency Typically 55%

NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

GaAs MESFET amplifier with high input impedance

Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
Contextual Info: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

LNA at 15 GHZ with Ultra high sensitivity

Abstract: MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G
Contextual Info: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION AUTUMN INSIDE. *12 NEW 2000 AMPLIFIERS Hittite HBT Amplifier Product Line Announced! RELEASED!. HBT MMICs Combine High Performance Design Expertise With InGaP GaAs Technology. Hittite has introduced five new InGaP HBT amplifiers

AP124-93

Abstract: AP125-94 TSSOP-16 rf power amplifier with S Parameters
Contextual Info: Preliminary GaAs IC 3 Stage DCS1800/1900 Power Amplifier AP124-93 TSSOP-16 Features • +3.5 V Operation 0.0256 0.65 mm BSC PIN 16 ■ Output Power of 33 dBm 0.009 (0.22 mm) REF. 0.173 (4.40 mm) ± 0.004 (0.10 mm) ■ Efficiency Typically 50% ■ Outstanding Efficiency vs. Supply Voltage

RF9802

Contextual Info: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE Features GND RX1 RX2 RX3 19 18 17 2 16 RX4 Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND

Contextual Info: GaAs 1C 3 Stage DCS1800/1900 Power Amplifier ESAlpha AP124-93 TSSCP-16 Features • +3.5 V Operation 0.0256 0.65 mm PIN 16 0.009 (0.22 mm REF. ■ Output Power of 33 dBm 0.173 (4.40 mm 0.252 (6.4 mm) BSC ■ Efficiency Typically 50% ■ Outstanding Efficiency vs. Supply Voltage

Contextual Info: June 2012 OFF-THE-SHELF Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Hittite Exhibiting at MTT-S 2012! View our product demos in Montreal, June 19 to 21, 2012. Booth #1701 ADC HMC9000 Multi-GHz Quantizer 25 New Featured Products!

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

Contextual Info: GaAs 1C 3 Stage DCS1800/1900 Power Amplifier ESAlpha AP124-93 TSSOP-16 F eat ur e s • +3.5 V Operation 0.0256 0.65 mm PIN 16 0.009 (0.22 mm REF. ■ Output Power of 33 dBm 0.173 (4.40 mm ± 0.004 (0.10 mm), ■ Efficiency Typically 50% 0.252 (6.4 mm) BSC

RF9802

Contextual Info: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE GND RX1 RX2 RX3 18 17 2 16 RX4 Proven PowerStar Architecture Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND GND 5 Integrated Power Flattening Circuit for Lower Power Variation