ALPs vcr
Abstract: IC LM 393 N DTM12C-N DTM12E-N DTM12G-N H-17 H-18 vdum200
Contextual Info: 132 — — — DTM 12-N • * jb b i# # * \ \ 4 4 CT0-220 12A O T O TO-220 ■ « « Itiltttt »Li I drm Vtm li'll %' DTM12C-N DTM12E-N DTM12G-N 400 600 VbSM Vdrm Tt , J tsm I 2-t P gm 100 50Hz, 0.5 r GM 10 2 (/S50Hz, dutyS10% ) di/dt T, T,ig ? >u) 5 (/S50Hz, dutyS10% )
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o-220t0-220dtm12c-ndtm12e-n+10dtm12g-n-10msdutys10/s50hzh-101alps vcric lm 393 nh-17h-18vdum200
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insb
Abstract: Hall Sensor insb HALL ELEMENT SHS361
Contextual Info: T - .33-01 SANYO SEMICO NDUCTOR CORP DIE » 7 1 1 7 0 7 t DDQSSlfc 4 | " P a s - oi BIDIRECTIONAL THYRISTORS P \ V rm(V loo' ^A) 0.5 t - o i - an . ’200 ' DTA05B : •Vêt • : % imA) (vj;. Package . DTA05E 15 2.3 T092 DTA08E 10 1.5 T092 DTA1C DTA1E
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dtc10c-ndtm10c-ndtc12c-ndtm12c-n+7t0202t0220t022qinsbhall sensor insbhall elementshs361
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2N60758
Abstract: 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2n49472n49482n49492n4986+162n49932n50602n50612n50622n50632n50642n607582n607382n60758 motorola2n607182sf1202n607082sf1262sf32a2sf2482n5257
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DTM12C-N
Abstract: DTM12E-N DTM12G-N DTM12-N
Contextual Info: Ordering number:EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor Features Package Dimensions • Insulation type. · Peak OFF-state voltagte : 200 to 600V. · RMS ON-state current : 12A. · TO-220 package. unit:mm 1144 [DTM12-N] * : The gate trigger mode is shown below.
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en1880bdtm12-no-220dtm12c-n+4dtm12e-ndtm12g-n1mst10msf50hz
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DTM12E
Abstract: DTN12
Contextual Info: Ordering number:EN4732 _ P T N 12 Silicon Diffused Junction Type ISAßroi 12A Bidirectional Thyristor Package Dimensions Features • AC power control, • Peak OFF-slate voltage ; 400, GOOV* • RMS ON-state cu rre n t: I2A . unit: mm / /
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en4732dtn12dtm12e50hz// |
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SHS210
Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)
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sbl-12sbl-801sbl-802sbl-803+8sbl-804sbl-221shs264shs311shs320shs330shs210shs361
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