DSXL Search Results

Contextual Info: SSI 78P233A ¿mmsiisíans’ DS-1 Line Interface A TDK Group/Com pany January 1992 DESCRIPTION FEATURES The SSI 78P233A DS-1 Line Interface is a bipolar integrated circuit that provides the interface functions necessary to convert DS-1-level signals to TTL-level

si111

Contextual Info: TIM5359-4L FEATURES : • L O W IN T E R M O D U L A T IO N D IS TO R TIO N I M 3 = - 4 5 dBc at Po = 25 dBm, Single Carrier Level • HIG H GAIN G idB ~ 9- odB at 5. 3 GHz to 5. 9 GHz • BROAD BAND INTERNALLY M A T C H E D « H IG H POWER • HERMETICALLY SEALED PACKAGE

Contextual Info: TIM5359-4L FEATURES : • L O W IN T E R M O D U L A T IO N D IS TO R TIO N I M 3 = —4 5 dBc at Po = 25 dBm, Single Carrier Level • HIG H GAIN G 1dB ~ 9- odB at 5. 3 GHz to 5. 9 GHz • BROAD BAND INTERNALLY M A T C H E D « H IG H POWER • HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-30L-251 TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION IM 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH GAIN G 1dB = 8.0 dB at 5.9 GHz to 6.75 GHz ■ BROAD BAND INTERNALLY MATCHED

CS61534

Abstract: CS2180 CS2180A 67115100 CXT8192 processor cross reference 0553-5006-IC dsxl CS61534-ID CS61534-ID1
Contextual Info: C S 6 1 5 3 4 S em iconductor Corporation PCM Line Interface Features General Description • Provides Analog PCM Line Interface for T1 and 2.048 MHz Applications The CS61534 combines the analog transmit and receive line interface functions for a PCM system inter­

Contextual Info: ACCESSORIES Models D-XLR2F and DS-XLR2F Dual XLR 3-pin Female Jacks on Decora Wall Plate - Solder type DS-XLR2F D-XLR2F Radio Design Labs Technical Support Centers U.S.A. 800 933-1780, (928) 778-3554; Fax: (928) 778-3506 Europe [NH Amsterdam] (+31) 20-6238 983; Fax: (+31) 20-6225-287

TM 1343 transformer

Abstract: eel 19-b KAE V2 Pulse Transformer for electric fence RLink arm jtag DS21352 DS21352L DS21352LN DS2152 DS21552
Contextual Info: PRELIMINARY 3.3V DS21352 and 5V DS21552 T1 Single Chip Transceivers SCT DALLAS SEMICONDUCTOR FEATURES • • • • • • • • • • • • • • • • • Complete DS1/ISDN-PRI/J1 transceiver functionality Long and Short haul LIU Crystal-less jitter attenuator

LXT360PE

Abstract: bone density detector TPO displays corp Midcom CR 0090
Contextual Info: M AY 1996 LXT360/361 Integrated T1/E1 LH/SH Transceivers for DS1/DSX-1/CSU or NTU/ISDN PRl Applications General Description The LXT360 and LXT361 are the first full-featured, fully integrated, combination transceivers for El ISDN Primary Rate Interface and Tl long- and short-haul applications.

Contextual Info: LXT325 T1/E1 Integrated Quad Receiver with LOS Generaf Description Features The LXT325 is a fully integrated quad PCM receiver for both North American 1.544 MHz T1 , and European 2.048 MHz (E l) applications. It incorporates four independent receivers in a single 28-pin DIP or PLCC. Each receiver

TIM3742-30SL

Contextual Info: TIM3742-30SL FEATURES : • LOW INTERM O D ULA TIO N DISTORTIO N I M 3 =* —4 5 dBc at Po =* 34.5 dBm. Single Carrier Level HIGH GAIN G -jdB = 1 0 .0 d B at 3.7 GHz to 4.2 GHz • HIGH POWER P y g — 4 5 dBm at 3 .7 GHz to 4.2 GHz HERMETICALLY SEALED PACKAGE

Contextual Info: ACCESSORIES Models D-XLR2M, DB-XLR2M, DS-XLR2M Dual XLR 3-pin Male Jacks on Decora Wall Plate - Solder type DB-XLR2M DS-XLR2M D-XLR2M Radio Design Labs Technical Support Centers U.S.A. 800 933-1780, (928) 778-3554; Fax: (928) 778-3506 Europe [NH Amsterdam] (+31) 20-6238 983; Fax: (+31) 20-6225-287

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MICROWAVE SEMICONDUCTOR T I M 5 3 5 9 —4 L TECHNICAL DATA FEATURES : • LOW INTERM ODULATION DISTORTION I M 3 = —45 dBc at Po = 25 dBm, Single Carrier Level - HIGH POWER ■ HIGH GAIN G 1dB = 9- OdB at 5. 3 GHz to 5. 9 GHz

cs61534

Contextual Info: CS61534 Semiconductor Corporation PCM Line interface Features • Provides Analog PCM Line Interface for T1 and 2.048 MHz Applications • Programmable Pulse-Shaping Line Driver • Performs Data and Timing Recovery • Transparent to AMI Polarity • Diagnostic and Performance Monitoring

pa 3029 b

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR T IM 5 9 6 4 -4 L TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION I M 3 = —45 dBc at Po = 25 dBm, Single Carrier Level ■ HIGH GAIN - HIGH POWER P-jdB “ ^ 6 dBm at 5.9 GHz to 6.4 GHz

dsxl

Abstract: PolyPhaser TA-NWT-00487 rj45 filter poe sma flange male ethernet connector microwave product catalog
Contextual Info: TM SERIES SIMPLY EXCEPTIONAL FILTER PROTECTION PRODUCT INFORMATION Global LIGHTNING Solutions The SX radio frequency DC-blocked filter protectors are ideal for RF coaxial applications where DC is not required. The SX™ can be used on high-powered RF feeder lines in

Contextual Info: DATA S H E E T AUGUST 1998 Revision 1.0 LXT305A Integrated T1/E1 Short-Haul Transceiver with Transmit JA General Description Features Low power consumption 400 mW maximum The LXT305A is a fully integrated transceiver for both North American 1.544 Mbps (Tl) and International 2.048

lxt300ne

Contextual Info: APRIL, 1996 DATA SHEET LXT300 / LXT301 Integrated T1/E1 Short-Haul Transceivers• The LXT300 and LXT301 are fully integrated transceivers for both North American 1.544 Mbps T l and International 2.048 Mbps ( E l) applications. Transmit pulse shapes (DSX-l or E l) are selectable for various line lengths and

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PidB = dBm at 5.9 GHz to 6.4 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - GldB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8SL Features • Low intermodulation distortion - I M 3 = -4 5 dB c a t Po = 2 8 .5 dBm , - Single carrier level • High pow er - P 1dB = 3 9 .5 dBm at 7.1 G H z to 7 .9 G H z • High efficiency - Tiacjd = 3 2 % at 7.1 G H z to 7 .9 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz

Contextual Info: ! I W Im SEmiOONDIJfCTOR 3.3V DS21352 and 5V DS21552 T1 Single Chip Transceivers SCT FEATURES • Complete DS1/ISDN-PRI/J1 transceiver functionality ■ Long and Short haul LIU ■ Crystal-less jitter attenuator ■ Generates DSX-1 and CSU line build outs