DSC34 Search Results

Contextual Info: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integ ra te d D evice Technology, Inc. FEATURES: DESCRIPTION: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 15/20/25ns (max.) • Low-power operation

Contextual Info: Â - ' PHY TC-PMD for 25.6 and 51.2 Mbps ATM Networks fffJSX Wdt) IDT77105 In teg rated D evice Technology, Inc. DESCRIPTION FEATURES • Performs the PHY-Transmission Convergence (TC) and Physical Media Dependent (PMD) Sublayer functions for 25.6 Mpbs and 51.2 Mbps ATM Networks

Contextual Info: IDT74FST3125 4-BIT BUS SWITCH Integrated Device Technology, Inc. FEATURES: • Bus switches provide zero delay paths • Low switch on-resistance: FST3xxx - 5Q • TTL-compatible input and output levels • ESD > 2000V per M IL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

Contextual Info: 20-BIT BUS SWITCH IDT74FST163384 IDT74FST1632384 ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: • Bus switches provide zero delay paths • Low switch on-resistance: FST163xxx - 5Q FST1632xxx — 28Q • TTL-compatible input and output levels

WH17

Abstract: BC118 VP2122 bc102 "SERIES MELPS 740" BC117 transistor BC118 bbc cs5 BC78 "MELPS 740"
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor BC137

Abstract: BC137 RE5RE50 24516 bc107 connections bc136 VP1127 transistor bc102 vp251 M37274EFSP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

diode A04 B14

Abstract: FST1632384 FST163384 IDT74FST1632384 IDT74FST163384 B1014
Contextual Info: IDT74FST163384 IDT74FST1632384 ADVANCE INFORMATION 20-BIT BUS SWITCH Integrated Device Technology, Inc. current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output

A13L

Abstract: IDT709269 IDT709269S
Contextual Info: PRELIMINARY IDT709269S/L HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: IDT71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

s0324

Contextual Info: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.

LF 3.3vOLT

Contextual Info: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail­

70914S

Contextual Info: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S FEATURES: • High-speed clock-to-data output tim es — M ilitary: 20/25ns (max.) — C om m ercial: 12/15/20ns (max.) • Low -power operation — IDT70914S Active: 850 mW (typ.) Standby: 50 mW (typ.)

Contextual Info: HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709269S/L Integrated Device Technology, Inc. FEATURES: • • • • • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location High-speed clock to data access

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124 Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to

A13L

Abstract: IDT709269 IDT709269S
Contextual Info: PRELIMINARY IDT709269S/L HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs - Data input, address, and control registers

IDT71128

Contextual Info: CMOS Static RAM 1 Meg 256K x 4-Bit Revolutionary Pinout IDT71128 Features Description ◆ The IDT71128 is a 1,048,576-bit high-speed static RAM organized as 256K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art

BC118

Abstract: wl12 VP117 "SERIES MELPS 740" T56R VP1126 VP137 VP136 23C16 BC128
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

so48

Abstract: DIODE 3473 B14 DIODE ic switch ttl FST1632384 FST163384 IDT74FST1632384 IDT74FST163384 diode A04 B14 3473
Contextual Info: IDT74FST163384 IDT74FST1632384 ADVANCE INFORMATION 20-BIT BUS SWITCH Integrated Device Technology, Inc. current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output

b1014

Abstract: FST163384 B14 DIODE FST1632384 IDT74FST1632384 IDT74FST163384 b1519
Contextual Info: IDT74FST163384 IDT74FST1632384 ADVANCE INFORMATION 20-BIT BUS SWITCH Integrated Device Technology, Inc. current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output

MARKING A14L

Abstract: A14L IDT709089S IDT709079
Contextual Info: HIGH-SPEED 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM ADVANCED IDT709079S/L Integrated Device Technology, Inc. FEATURES: • TTL- compatible, single 5V ±10% power supply • Full synchronous operation from either port - 5ns setup to clock,1ns hold on all Control, data, and

Seeq Technology

Abstract: PE67583 cat 6 rj45 connector Seeq 100PPM IDT77105 diagram pc board ta 306-2 z0104 16TxD
Contextual Info: PRELIMINARY IDT77105 PHY TC-PMD for 25.6 Mbps ATM Networks Integrated Device Technology, Inc. FEATURES DESCRIPTION • Performs the PHY-Transmission Convergence (TC) and Physical Media Dependent (PMD) Sublayer functions for 25.6 Mpbs ATM Networks • UTOPIA Level 1 Interface

K3478

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 8,192 x 18, 16,384 x 18 PRELIMINARY IDT72V255 IDT72V265 In te g ra te d D e v ic e T e c h n o lo g y , Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology FEATURES: • 3.3 Volt operation saves 60 percent power compared to

Contextual Info: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 15/20/25ns (max.) • Low-power operation

S0324

Abstract: S0323
Contextual Info: PRELIMINARY IDT71V124 o Integrated De o 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED EC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle tim es