50N28
Abstract: IXTA50N28T
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFETs VDSS ID25 IXTA50N28T IXTP50N28T IXTQ50N28T RDS on = 280V = 50A Ω ≤ 66mΩ N-Channel Enhancement Mode For PDP Drivers TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTA50N28T
IXTP50N28T
IXTQ50N28T
O-263
IXTA50N28T
50N28T
50N28
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50N28T
Abstract: 50N28 DS99378 50N2 ixTA50N28T
Contextual Info: Advance Technical Information IXTQ 50N28T IXTA 50N28T IXTP 50N28T Trench Gate Power MOSFET VDSS ID25 = 280 V = 50 A Ω < 60 mΩ RDS on N-Channel Enhancement Mode For PDP drivers TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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Original
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50N28T
O-220
O-263
50N28T
50N28
DS99378
50N2
ixTA50N28T
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50N28
Abstract: 50N28T IXTA50N28T IXTQ50N28T
Contextual Info: Preliminary Technical Information IXTA50N28T IXTP50N28T IXTQ50N28T Trench Gate Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode For PDP Drivers = 280V = 50A ≤ 66mΩ Ω TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTA50N28T
IXTP50N28T
IXTQ50N28T
O-263
O-220AB
O-220
O-220
50N28
50N28T
IXTQ50N28T
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PDF
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