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    DS945 Search Results

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    DS945 Price and Stock

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    Microchip Technology Inc CDS945B-1/TR

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    Master Electronics CDS945B-1/TR
    • 1 $84.75
    • 10 $77.14
    • 100 $73.38
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    Microchip Technology Inc CDS945B-1/TR 28 Weeks
    • 1 $84.24
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    Microchip Technology Inc CDS945B-1

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    Master Electronics CDS945B-1
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    Microchip Technology Inc CDS945B-1 28 Weeks
    • 1 $84.08
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    Philips Semiconductors BDS945

    NPN SILICON EPITAXIAL BASE POWER TRANSISTOR Small Signal Bipolar Transistor, 3A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
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    ComSIT USA BDS945 10,000
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    DS945 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CLC945

    Abstract: CLC945AJQ CLC945BJQ CLC946 CLC946AJQ ds945
    Contextual Info: Low-Power, 12-Bit 1.0/1.5 MSPS A/D Converters Comlinear A National Sem iconductor Company Advance Data CLC945/CLC946 FEATURES: • Low-power • SNR of 72dB • THD of -82dB • Single +5V power supply • Internal sample & hold • Internal 2:1 analog multiplexer


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    12-bitclc945/clc946-82dbclc945+5clc946clc945ajqclc945bjqclc946ajqds945 PDF

    Contextual Info: Comlinear Low-Power, 12-Bit 1.0/1.5 MSPS A/D Converters A National Semiconductor Company Advance Data CLC945/CLC946 FEATURES: • Low-power • SNR of 72dB • THD of -82dB • Single +5V power supply • Internal sample & hold • Internal 2:1 analog multiplexer


    OCR Scan
    12-bitclc945/clc946-82dbclc945+1clc946 PDF

    b945

    Abstract: 1N4001 74LS 970T ADS-945 ADS-945EX RN55C
    Contextual Info: S* H A I U I ADS-945 14-Bit, 10MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • • • • • • • • • • • 14-bit resolution 10MHz minimum throughput Functionally complete No missing codes Low power, 4.2W Excellent dynamic performance


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    14-bit10mhzads-945-82db+7amplifi2857b9451n400174ls970tads-945exrn55c PDF

    IXTH11P50

    Contextual Info: Power MOSFETs VDSS ID25 IXTH11P50 IXTT11P50 RDS on = = ≤ - 500V - 11A Ω 750mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Symbol Test Conditions D (Tab) Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    ixth11p50ixtt11p50o-268o-247+3100ms11p507x-l64 PDF

    Contextual Info: VDSS ID25 Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol IXTH 11P50 IXTT 11P50 Test Conditions RDS on Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient


    Original
    11p50o-247-250v PDF

    Contextual Info: IXTH 8P50 IXTT 8P50 Standard Power MOSFET VDSS = -500 V ID25 = -8 A RDS on = 1.2 Ω P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500


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    o-247405b2 PDF

    Contextual Info: RT9451 Switch-Mode Single Cell Li-ion Battery Charger with USB OTG General Description The RT9451 integrates a high efficiency USB friendly switch mode charger with On-The-Go OTG support for single cell Li-ion and Li-polymer batteries, D+D− detection, and


    Original
    rt9451375khzds9451-00 PDF

    IXTH11P50

    Contextual Info: Power MOSFETs IXTH11P50 IXTT11P50 VDSS ID25 RDS on = = ≤ - 500V - 11A Ω 750mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    ixth11p50ixtt11p50o-268062in+1o-247 PDF

    11P50

    Abstract: TO-247 transistor N 343 AD
    Contextual Info: VDSS ID25 Standard Power MOSFET IXTH 11P50 IXTT 11P50 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient


    Original
    11p50o-247-250vto-247+1transistor n 343 ad PDF

    Contextual Info: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    10p5011p50o-247o-268 PDF

    11P50

    Contextual Info: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    10p5011p50o-247-250v PDF

    TO-247 weight

    Contextual Info: IXTH 8P50 IXTT 8P50 Standard Power MOSFET VDSS = -500 V = -8 A ID25 RDS on = 1.2 Ω P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500


    Original
    o-247405b2to-247 weight PDF