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    IXTT11P50 Search Results

    IXTT11P50 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT11P50
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 11A TO-268 Original PDF 4
    IXTT11P50
    		IXYS 500V standard power MOSFET Original PDF 123.49KB 2
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    IXTT11P50 Price and Stock

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    Littelfuse Inc IXTT11P50

    MOSFET P-CH 500V 11A TO268
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    DigiKey IXTT11P50 Tube 514 1
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    Verical IXTT11P50 30 1
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    Arrow Electronics IXTT11P50 30 37 Weeks 1
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    Newark IXTT11P50 Bulk 300
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    IXYS Corporation IXTT11P50-TRL

    MOSFET P-CH 500V 11A TO268
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    Mouser Electronics IXTT11P50-TRL 324
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    TTI IXTT11P50-TRL Reel 400
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    IXYS Corporation IXTT11P50

    MOSFETs 11 Amps 500V 0.75 Rds
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    Mouser Electronics IXTT11P50
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    Future Electronics IXTT11P50 Tube 300
    • 1 $7.05
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    TTI IXTT11P50 Tube 150 30
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    Littelfuse Inc IXTT11P50-TRL

    Ixtt11P50 Trl/ Tr |Littelfuse IXTT11P50-TRL
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    Newark IXTT11P50-TRL Reel 400
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    IXTT11P50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH11P50

    Contextual Info: Power MOSFETs VDSS ID25 IXTH11P50 IXTT11P50 RDS on = = ≤ - 500V - 11A Ω 750mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Symbol Test Conditions D (Tab) Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH11P50 IXTT11P50 O-268 O-247 100ms 11P50 7X-L64 IXTH11P50 PDF

    IXTH11P50

    Contextual Info: Power MOSFETs IXTH11P50 IXTT11P50 VDSS ID25 RDS on = = ≤ - 500V - 11A Ω 750mΩ P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH11P50 IXTT11P50 O-268 062in. O-247) O-268 O-247 O-247 PDF