DS359 Search Results

TTC-B01

Abstract: TTC-B-01 TTC 104 T5.5A ttc 103 MA28139 ttc 103 datasheet FTC 960 GEC Plessey Semiconductors cross reference RTU DATA SHEET
Contextual Info: MA28139 MA28139 OBDH Bus Terminal Replaces June 1999 version, DS3592-5.0 DS3592-6.0 January 2000 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal

XG404

Abstract: DB10 DS3595-5 ds35954 DS3595
Contextual Info: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

TTC-B-01

Abstract: TTC 104 ttc 103 datasheet MA28138 MA28139 marconi company MIL-STD-1750 MOSC T5.5A
Contextual Info: MA28139 MA28139 OBDH Bus Terminal Replaces January 2000 version, DS3592-6.0 DS3592-6.1 July 2002 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal

MA28139

Abstract: MA28138 T5.5A TTC-B01
Contextual Info: MA28139 MA28139 OBDH Bus Terminal Replaces January 2000 version, DS3592-6.0 DS3592-6.1 July 2002 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal

Contextual Info: Si GEC PLESS EY S E M I C O N D U C T O R S ADVANCE INFORMATION DS3593-2.2 15HSC Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The 15HSC Series offer the conbined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and high level of radiation

54175

Contextual Info: GEC P L E S S E Y M S E M I C O N D U C T O R S DS3594-3.3 54HSC/T Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high

Contextual Info: P ^ p i G E C P L E S S E Y S E M I C O N D U C T O R S DS3592-4.6 MA28139 OBDH BUS TERMINAL The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal

16-LINE TO 4-LINE PRIORITY ENCODERS

Abstract: t04 68 3 pin diode t04 68 3 pin transistor EB 36 3C GR "silicon on sapphire" 74 LS 04 Logic Gates cmos dual s-r latch MIL-STD-38510 multiplexers 74 LS 150 transistor T04
Contextual Info: 54HSC/T Series 54HSC/T Series Radiation Hard High Speed CMOS/SOS Logic Replaces May 1995 version, DS3594-3.3 The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high

54HST630

Abstract: DB10 DS3595-5
Contextual Info: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 DS3595-5.1 July 2002 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

Contextual Info: w GEC P L E S S E Y SE M I C O N D U C T O R S DS3598-3.2 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS T h e logic building b lo ck fo r th e G P S d ouble level m etal C M O S /S O S g a te a rra y s is a fo u r tr a n s is to r 'c e ll- u n it’

S/A3N01

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS3597-2.4 MACROSOS1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS’s Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving

RBL 43 P TRANSISTOR

Abstract: RBL 43 P litton cpu MA28138 RBL 43 P Transistor Circuits bt 109 transistor RBL 43 RBL 43 P TRANSÄ°STOR MA281 MA28139
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA28138 MARCH 1995 PRELIMINARY INFORMATION DS3591-4.4 MA28138 OBDH REMOTE BUS INTERFACE The MA28138 is an OBDH Remote Bus Interface RBI that provides the facilities required by a modern packet OBDH

DS3595-5

Abstract: 54HST630 DB10 DS3595 XG404
Contextual Info: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

RBL 43 P TRANSISTOR

Abstract: RBL 43 P transistor bc 1906 RBL 43 P Transistor Circuits RBL 43 litton cpu RBL 43 P TRANSISTOR parameters Litton Systems bt 109 transistor MA28138
Contextual Info: MA28138 MARCH 1995 PRELIMINARY INFORMATION DS3591-4.4 MA28138 OBDH REMOTE BUS INTERFACE The MA28138 is an OBDH Remote Bus Interface RBI that provides the facilities required by a modern packet OBDH bus system but at the same time preserves compatibility with

szy 21

Abstract: ce 65 s encoder MA1916 seal msg XG404 convolution encoder
Contextual Info: MA1916 MA1916 Radiation Hard Reed-Solomon & Convolution Encoder Replaces June 1999 version, DS3590-4.0 DS3590-5.0 January 2000 The purpose of the MA1916 is to encode serial data to allow error correction when the data is transmitted over a noisy communication link. As the name suggests, the unit contains

Contextual Info: Si G E C P L E S S E Y SE M I C O N D U C T O R S DS3597-2 3 M ACRO SO S1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS's Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S DS3595-3.3 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

Contextual Info: S i GEC PLESS EY S F M I C O N D U C T O K S DS3594-3.1 54HSC/T Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high

Contextual Info: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the

full adder circuit using nor gates

Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
Contextual Info: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the

MA5114

Abstract: a8415
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

vhdl code for 4 bit carry look ahead adder

Abstract: vhdl code for 8 bit carry look ahead adder DS3596-4 full adder circuit using nor gates vhdl code for carry look ahead adder DS3596 LAH3 vhdl code for 4 bit ripple COUNTER CERQUAD44 MA9600
Contextual Info: MA9000A Sea of MA9000A Gates Radiation hard Advance Gate Array Design System ReplacesJanuary 2000 version, DS3596-4.0 DS3596-4.1 July 2002 The logic building block is a cell-unit, equivalent in size to a two input NAND gate. Back-to-back cell units form the core of

MA5114

Abstract: 17-18L
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA28139 APRIL 1995 DS3592-4.6 MA28139 OBDH BUS TERMINAL The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal