DS1220Y DALLAS Search Results

1220Y

Abstract: DS1220
Contextual Info: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc A7 1 A6 | A5 | s A4 1 24 1 VCC • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

2816 eeprom

Abstract: eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716
Contextual Info: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of externa! power 1 24 Aö 2 23 A5 3 22 A4 4 21 A3 5 20 A2 6 19 A1 7 18 A0 8 17 • Read and write access times as fast as 100 ns

Contextual Info: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss A7 24 1 Vcc A6 | 2 23 1 A8 22 1 A9 A4 | 4

Contextual Info: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 24 g V cc A6 | 2 23 A8 | 3 22 | A9 A4 | 4 21 | WE • Unlimited write cycles A3 1 5 20 § ÔÊ • Low-power CMOS

CI EEPROM 2816

Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
Contextual Info: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power

DS1220

Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas
Contextual Info: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power

Contextual Info: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power

Contextual Info: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

CI EEPROM 2816

Abstract: CI EPROM 2816 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM A7 1 1 24 1 V cc A6

JESD22-B102

Abstract: JESD22-B100 JESD22B-102 DS1220
Contextual Info: 02/11/2004 RELIABILITY REPORT FOR USE THIS PART FOR DS1220Y DS1220 Rev D2 AD Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292

2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
Contextual Info: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

2816 eeprom

Abstract: eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100
Contextual Info: !• DALLAS n r mmimmmmm DS1220Y 16k Nonvolatile SRAM t com PIN ASSIGNMENT FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2716 eeprom

Abstract: DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

Contextual Info: DS1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I

Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

dallas 1220y

Abstract: 1220Y
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

2716 eeprom

Abstract: eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND
Contextual Info: 19-5579; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power

Contextual Info: DS1220Y D A L L A S s e m ic o n d u c to r D S1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc A7 1 V cc A8 CO CM 24 1 A5 1 3 22 1 A9 A4 | 4 21 1 w i A3 1 20 1 ÖE A6 • Directly replaces 2K x 8 volatile static RAM or

CI EEPROM 2816

Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR CORP 50E D • DALLAS SEMICONDUCTOR Ebl413D 000Mb34 b I DS1220AB/AD 16K Nonvolatile SRAM 7^ FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

DS1225Y

Abstract: DS1218 DS1210 DS1220Y burn-in
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 5/7/98 Subject: PRODUCT CHANGE NOTICE - E80701 Description: Burn-in Elimination - DS1218 Description of Change:

dallas ds1213

Abstract: ds1235 microcontroller water level controller circuit diagram DS1213 DALLAS DS1213 equivalent DS1213D DALLAS SEMICONDUCTOR Ds1235 dallas ds1213c lithium* protection FOR DS1235 ds1235y-150
Contextual Info: Application Note 202 NV SRAM Frequently Asked Questions www.maxim-ic.com What is an NV SRAM? A nonvolatile static random access memory NV SRAM is a type of computer memory that maintains its memory data when power is shut off. NV SRAMs store digital information like system configuration or

DS1669-100

Abstract: TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S
Contextual Info: ORDERING INFORMATION DEVICE DS0621–SDK DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC 14–Pin DIP

DS1425L-F5

Abstract: rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S
Contextual Info: ORDERING INFORMATION DEVICE DS0621–SDK DS0630 DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC