DS1112 Search Results

Contextual Info: DS1112SM55-18 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage5.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)18k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1112PG47 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.7k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

Contextual Info: DS1112PG56 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage5.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

Contextual Info: M ITEL DS1112SG Rectifier Diode S E M IC O N D U C T O R DS4181 - 3.2 Supersedes January 1997 version, DS4181 - 3.1 KEY PARAMETERS VRRM 6000V IF av, 630V 'fs m 10500A APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.

DS1112SG60

Contextual Info: @ DS1112SG M IT E L Rectifier Diode S E M IC O N D U C T O R Supersedes January 1997 version, DS4181 - 3.1 DS4181 - 3.2 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V IF av,

Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

DS1112SG

Abstract: DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59 DS1112SG60 DS4181-5
Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1112SG56 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage5.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

Contextual Info: DS1112PR47 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.7k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

DS1112SG

Abstract: DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59 DS1112SG60 DS4181-5
Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1112SM50-18 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage5.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)18k @Temp. (øC) (Test Condition)25#

Contextual Info: DS1112SR47 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.7k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

Contextual Info: GEC P L E S S E Y w S E M I C O N D U C T O R ja n u a r y im t S DS4181 -3.1 DS1112SG RECTIFIER DIODE APPLICATIONS • KEY PARAMETERS V RRM Rectification. ■ lp Av, Freewheel Diode. 630V »PS« ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

DS1112SG56

Abstract: tel 839 b
Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

DS1112SG60

Abstract: DS4181-5 AN4839 DS1112SG DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59
Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

Contextual Info: DS1112PR56 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage5.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

Contextual Info: DS1112SR56 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current870 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage5.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.8.5k V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)

Contextual Info: b3E D blG3BDl D D 0 7 5 n T7Ö I IHCHP niCROCHIP TECHNOLOGY INC & 28C04A Microchip 4K 512 X8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100|jA Standby

Contextual Info: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

Contextual Info: RFVC9752 RFVC9752Low Phase Noise Voltage Controlled Oscillator 1052MHz to 1086MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1052MHz TO 1086MHz Package: MCM, 20-Pin, 6mmx6mm Features  -132dBc/Hz Typical at 100kHz Offset  POUT 0dBm Typical  7.4V Supply

Contextual Info: RFDA0025 RFDA0025Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER  50MHz to 850MHz Operation  6-Bit Digital Step Attenuator  Serial Control Interface  31.5dB Attenuation Range 0.5dB Step 1 GND 2 GND ATTOUT