SZA6044Z
Abstract: HEMT marking P 24 lead plastic qfn 4mmX4mm
Contextual Info: SZA-6044 SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor
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sza-6044ds110714sza6044zsqsza6044zsr+4sza6044zsza6044zpck-evb1hemt marking p24 lead plastic qfn 4mmx4mm
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ATC100B150JT
Abstract: rfmd envelope tracking
Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power>240W Advanced Heat Sink Technology RF IN
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rfg1m09180700mhz1000mhzrf400-2+5865mhz960mhz47dbmatc100b150jtrfmd envelope tracking
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RF9810
Abstract: rf98
Contextual Info: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% Integrated VBATT Tracking Circuit for Improved Switching Spectrum
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rf981063mmx524mmx1b34/39+725dbmgsm850/egsm900dcs1800/pcs1900rf9810tr13rf9810tr7eia-481rf98
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Contextual Info: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA Proven PowerStar Architecture Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Integrated VBATT Tracking Circuit
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rf9810gsm850/egsm900dcs1800/pcs1900rf716x+5rf9801/2eia-481gsm850/egsm900/dcs1800/pcs1900rf9810sbrf9810pcba-41x
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