DS100267 Search Results
DS100267 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXFZ140N25TContextual Info: Advance Technical Information IXFZ140N25T GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 Test Conditions Maximum Ratings |
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ixfz140n25t200nsde4755-10-a | |
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Contextual Info: Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ140N25T RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 D D D G Symbol Test Conditions |
Original |
ixfz140n25t200nsde4755-10-a | |
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Contextual Info: 54AC109 • 54ACT109 Dual JK Positive Edge-Triggered Flip-Flop Simultaneous LOW on CD and SD makes both Q and Q General Description The ’AC/’ACT109 consists of two high-speed completely independent transition clocked JK flip-flops. The clocking operation is independent of rise and fall times of the clock |
Original |
54ac10954act109act109act74+2 | |
89551
Abstract: 54AC109 54ACT109 AC109 ACT74 DS100267
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Original |
54ac10954act109act109act74+3 |