DS100260 Search Results

national semiconductor databook

Abstract: 54ACT08 DIODE DATABOOK 54AC08 54ACTQ08 AC08 E20A J14A W14B SMD DATABOOK
Contextual Info: 54AC08 Quad 2-Input AND Gate n Standard Microcircuit Drawing SMD 5962-87615 n 54AC08 now qualified to 300Krad RHA designation, refer to the SMD for more information n For Military 54ACT08 device, see 54ACTQ08 General Description The ’AC08 contains four, 2-input AND gates.

54ACT08

Abstract: 54AC08 54ACTQ08 AC08 E20A
Contextual Info: 54AC08 Quad 2-Input AND Gate General Description Features The ’AC08 contains four, 2-input AND gates. n n n n ICC reduced by 50% Outputs source/sink 24 mA Standard Microcircuit Drawing SMD 5962-87615 For Military 54ACT08 device, see 54ACTQ08 Logic Symbols

IXTH16N20D2

Abstract: 16n20 16N20D2 ixtt16n20d2
Contextual Info: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous

IXTT16N20D2

Abstract: 16n20 IXTH16N20D2 16N20D2 40810
Contextual Info: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous