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    IXTT16N20D2 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT16N20D2
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 16A TO-268 Original PDF 5
    SF Impression Pixel

    IXTT16N20D2 Price and Stock

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    IXYS Corporation IXTT16N20D2

    MOSFETs D2 Depletion Mode Power MOSFETs
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    Mouser Electronics IXTT16N20D2
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    TTI IXTT16N20D2 Tube 140 10
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    Future Electronics IXTT16N20D2 Tube 6,570 19 Weeks 2
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    TME IXTT16N20D2 300
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    Littelfuse Inc IXTT16N20D2

    Mosfet, N-Ch, 200V, 16A, To-268; |Littelfuse IXTT16N20D2
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    RS IXTT16N20D2 Bulk 8 Weeks 30
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    Onlinecomponents.com IXTT16N20D2
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    Littelfuse Inc IXTT16N20D2-TRL

    Ixtt16N20D2-Trl; |Littelfuse IXTT16N20D2-TRL
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    IXYS Corporation IXTT16N20D2-TRL

    Transistor: N-MOSFET
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    TME IXTT16N20D2-TRL 400
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    IXTT16N20D2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH16N20D2

    Abstract: 16n20 16N20D2 ixtt16n20d2
    Contextual Info: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixth16n20d2ixtt16n20d2o-247o-268+4100msimpedance1016n2016n20d2 PDF

    Contextual Info: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous


    Original     		ixtt16n20d2ixth16n20d2o-268062in+2o-247100ms PDF

    IXTT16N20D2

    Abstract: 16n20 IXTH16N20D2 16N20D2 40810
    Contextual Info: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixth16n20d2ixtt16n20d2o-247o-268+5100msimpedance1016n2016n20d240810 PDF

    Contextual Info: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous


    Original     		ixtt16n20d2ixth16n20d2o-268062in+2o-247100ms PDF

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Contextual Info: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		an-d16ixta02n100d2depletion 400v power mosfetixtp02n100d2+7n-channel depletion-mode mosfet high voltagedepletion-mode mosfetixtu02n100d2mosfet "current sourceixty02n100d2depletion mosfetixty1r6n50d2 PDF