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IXTH16N20D2 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH16N20D2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 16A TO-247	Original	PDF		5

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IXYS Corporation IXTH16N20D2 MOSFET N-CH 200V 16A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH16N20D2	Tube	494		1	1 $20.90 10 $20.90 100 $13.18 1000 $11.95 10000 $11.95	Buy Now
Mouser Electronics	IXTH16N20D2		555			1 $20.58 10 $13.19 100 $13.19 1000 $11.95 10000 $11.95	Buy Now
Future Electronics	IXTH16N20D2	Tube		32 Weeks	300	1 - 10 - 100 $13.88 1000 $13.66 10000 $13.66	Buy Now
TTI	IXTH16N20D2	Tube	300		30	1 - 10 - 100 $13.18 1000 $11.95 10000 $11.95	Buy Now
TME	IXTH16N20D2				1	1 $20.16 10 $14.46 100 $11.66 1000 $11.66 10000 $11.66	Get Quote
Littelfuse Inc IXTH16N20D2 MOSFET, N-CH, 200V, 16A, 150DEG C, 695W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V; MSL:-RoHS Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTH16N20D2	Bulk	600		1	1 $23.13 10 $18.85 100 $14.59 1000 $13.22 10000 $13.22	Buy Now
	IXTH16N20D2	Bulk			1	1 $24.44 10 $23.23 100 $17.66 1000 $15.85 10000 $15.85	Buy Now
RS	IXTH16N20D2	Bulk		8 Weeks	30	1 - 10 - 100 $17.56 1000 $17.00 10000 $17.00	Get Quote

IXTH16N20D2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTH16N20D2 Abstract: 16n20 16N20D2 ixtt16n20d2 Contextual Info: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16N20D2 IXTT16N20D2 O-247 O-247) O-268 100ms Impedance10 IXTH16N20D2 16n20 16N20D2 ixtt16n20d2	PDF
Contextual Info: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous	Original	IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms	PDF
IXTT16N20D2 Abstract: 16n20 IXTH16N20D2 16N20D2 40810 Contextual Info: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16N20D2 IXTT16N20D2 O-247 O-268 O-247) O-247 100ms Impedance10 IXTT16N20D2 16n20 16N20D2 40810	PDF
Contextual Info: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous	Original	IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms	PDF
IXTA02N100D2 Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 Contextual Info: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .	Original	AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2	PDF