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    DS100112 Datasheets Context Search

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    1N80P

    Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		ixta1n80pixtp1n80pixtu1n80pixty1n80p+6o-263o-251o-2201n80pt1n80ixta1n80 PDF

    RFVC1800

    Abstract: RFVC-1800 DS100112
    Contextual Info: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The


    Original     		rfvc1800ds100112rfvc1800sbrfvc1800pck-410+210pcsrfvc-1800 PDF

    IXTU1N80P

    Abstract: T1N80 1N80P
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


    Original     		o-263ixta1n80pixtp1n80pixtu1n80p+5ixty1n80po-251o-220t1n801n80p PDF