GSM900
Abstract: QFN20 RF3863 RF3867 RF3867PCK-410
Contextual Info: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package
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rf386720-pin700mhz3800mhz+5qfn20gsm900rf3863ds091119rf3867pck-410
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FPD1500SOT89CESR
Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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fpd1500sot89fpd1500sot825mx1500m42dbm+5fpd1500sot89efpd1500sot89ceeb1500sot89ce-bcfpd1500sot89cesrmil-hdbk-263
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marking code macom
Abstract: macom marking MAcom device marking marking macom ETC1-1T Macom marking code HEMT marking P CGA-3318
Contextual Info: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional
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cga-3318zcga3318cga3318zcga3318zsb+10cga3318zsqcga3318zsrmarking code macommacom markingmacom device markingmarking macometc1-1tmacom marking codehemt marking pcga-3318
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FPD3000SOT89E
Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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fpd3000sot89fpd3000sot830dbm45dbm+525mx1500mfpd3000sot89efpd3000sot89ceeb3000sot89-bcmicro transistor 1203
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transistor bc 647
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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fpd750sot8925dbm39dbmmx1500+4fpd750sot89efpd750sot89ceeb750sot89ce-bctransistor bc 647
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CGA-6681Z
Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
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cga-6618z1000mhzcga-6681zds091119+1cga6618zsb
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Contextual Info: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package ̈ ̈
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rf3867700mhz3800mhzqfn20+320-pingsm900ds091119
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0402CS
Abstract: FPD750SOT343 transistor 24 GHz
Contextual Info: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
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fpd750sot343fpd750sot34ot343mx750+71850mhz20dbm37dbm2002/95/ec11kaged0402cstransistor 24 ghz
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