DS 430 Search Results

MIL-W-85

Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
Contextual Info: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .

DS3319

Abstract: SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H
Contextual Info: 84 SAMWHA ELECTRONICS POT CORES DS30~DS40 PC05~PC30 Ordering Code System PL-9 Material Core Type DS 4020 Core Size SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50

105N15N

Abstract: PG-TO220FP IPA105N15N3 IPA10 IPA105N15N IPA105N15N3 G IEC61249-2-21 JESD22 IPA105N15N3G
Contextual Info: IPA105N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max 10.5 mΩ 37 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature

JESD22

Contextual Info: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature

077N12NS

Abstract: 12098a BSC077N12NS3 JESD22 077N12N
Contextual Info: BSC077N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 7.7 mΩ ID 98 A • Very low on-resistance R DS(on) • 150 °C operating temperature

077n12ns

Abstract: BSC077N12NS3 G BSC077N12NS3 IEC61249-2-21 JESD22 DA-160
Contextual Info: BSC077N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 7.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 98 A PG-TDSON-8 • Very low on-resistance R DS(on) • 150 °C operating temperature

Contextual Info: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature

rectifier d20 60

Contextual Info: BSF083N03LQ G OptiMOSTM2 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 8.3 mΩ ID 53 A • Excellent gate charge x R DS(on) product (FOM) • Low profile (<0.7 mm)

IEC61249-2-21

Abstract: JESD22 PG-TDSON-8
Contextual Info: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature

Contextual Info: SSI 78P233A ¿mmsiisíans’ DS-1 Line Interface A TDK Group/Com pany January 1992 DESCRIPTION FEATURES The SSI 78P233A DS-1 Line Interface is a bipolar integrated circuit that provides the interface functions necessary to convert DS-1-level signals to TTL-level

265N10LS

Contextual Info: BSC265N10LSF G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Very low gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 26.5 mΩ ID 40 A • Ideal for high-frequency switching and synchronous rectification

265N10LS

Abstract: BSC265N10LSF BSC265N10LSF G JESD22
Contextual Info: BSC265N10LSF G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Very low gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 26.5 mΩ ID 40 A • Ideal for high-frequency switching and synchronous rectification

Contextual Info: S T S 4300 S amHop Microelectronics C orp. AP R .25 2006 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max ID R ugged and reliable. 62 @ V G S = 10V

265N10LS

Abstract: BSC265N10LSF G BSC265N10LSF IEC61249-2-21 JESD22 BSC26
Contextual Info: BSC265N10LSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 26.5 mΩ • Very low gate charge x R DS(on) product (FOM) ID 40 A • Ideal for high-frequency switching and synchronous rectification

6r125p

Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125
Contextual Info: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability

bsc25

Abstract: 457V BSC252N10NSF JESD22 252N10NS
Contextual Info: BSC252N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 25.2 mΩ ID 40 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

25D25

Abstract: BSC252N10NS BSC25
Contextual Info: BSC252N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 25.2 mΩ ID 40 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

YMF738

Abstract: SPDIF i2s RECEIVER YMF738-R
Contextual Info: YMF738 Preliminary DS-2 OVERVIEW YMF738 DS-2 is a multi-function digital controller implementing Audio and Modem capabilities. DS-2 audio function consists of two separated functional blocks that are PCI Audio block and Legacy Audio block. The PCI Audio block handles maximum of 73 concurrent audio streams with the Bus Master DMA

sii861

Abstract: 19F590 SiI859 SiI-DS-0026-D 6Af amplifier
Contextual Info: SiI859 / SiI863 Data Sheet Silicon Image, Inc. Revision 1.2 May, 2002 SiI-DS-0026-D Silicon Image, Inc. SiI859 / SiI863 SiI-DS-0026-D Table of Contents Table of Contents . 2

4261s

Abstract: IPD04N03LB JESD22 PG-TO252-3-11 P-TO252-3-11
Contextual Info: IPD04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

6r125p

Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

YAMAHA xg ymf

Abstract: sound blaster YMF754 spdif input d2s 28 diode wavetable synthesizer YMF754-R PC99 YMF744B YMF754-V
Contextual Info: YMF754 Preliminary DS-1E OVERVIEW YMF754 DS-1E is a high performance audio controller for the PCI Bus. DS-1E consists of two separated functional blocks. One is the PCI Audio block and the other is the Legacy Audio block. PCI Audio block provides 64-voice XG wavetable synthesizer with reverb and variation by using the software

YMF724F-V

Abstract: YMF727 MPU401 Yamaha XG YAMAHA xg ymf YMF724F YMF724 yamaha ds1 xg midi synthesizer sound blaster
Contextual Info: YMF724F DS-1 OVERVIEW YMF724F DS-1 is a high performance audio controller for the PCI Bus. DS-1 consists of two separated functional blocks. One is the PCI Audio block and the other is the Legacy Audio block. PCI Audio block allows Software Driver to handle maximum of 73 concurrent audio streams with the Bus Master DMA engine.

17-12A

Abstract: 17-16-A 17-18A 1718a 1712A 17-16A A2S450 1708A dsai 10-32UNF
Contextual Info: Rectifier Diodes Avalanche Diodes DS 17 DSI 17 IFRMS = 40 A DSA 17 DSAI 17 IFAVM = 25 A VRRM = 800 - 1800 V VRSM VBRmin ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950