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    205N10LS Search Results

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    205N10LS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC205N10LS-G

    MOSFET N-CH 100V 7.4A/45A TDSON
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    DigiKey BSC205N10LS-G Reel
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    Infineon Technologies AG BSC205N10LSGATMA1

    Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics BSC205N10LSGATMA1 2,500 1
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    Infineon Technologies AG BSC205N10LSG

    Discontinued
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    Vyrian BSC205N10LSG 1,734
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    205N10LS Datasheets Context Search

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    JESD22

    Contextual Info: 205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC205N10LS 205N10LS JESD22 PDF

    IEC61249-2-21

    Abstract: JESD22 PG-TDSON-8
    Contextual Info: 205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original     		BSC205N10LS IEC61249-2-21 205N10LS IEC61249-2-21 JESD22 PG-TDSON-8 PDF

    Contextual Info: 205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC205N10LS 205N10LS PDF