DRIVER TRANSISTOR HFE 60 Search Results

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • Unit: mm High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC2532

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications Unit: mm • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC2532

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • Unit: mm High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

KTC2804

Abstract: KTA1705
Contextual Info: SEMICONDUCTOR KTC2804 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR DC-DC CONVERTER, RELAY DRIVER A B D C E FEATURES F Low Saturation Voltage. : VCE sat 0.8V (IC=2A, IB=0.2A) G Excellent hFE Linearity and high hFE. H : hFE:70 240 (VCE=2V, IC=0.5A)

HN1A07F

Contextual Info: HN1A07F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = −6V IC = −400mA

Darlington Transistor

Abstract: KTD2686
Contextual Info: SEMICONDUCTOR KTD2686 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR. SOLENOID DRIVER. MOTOR DRIVER. A FEATURES ・High DC Current Gain C H G J B E : hFE=2000 Min. (VCE=2V, IC=1A) MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC D K SYMBOL

Contextual Info: SEMICONDUCTOR KTD2686 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR. SOLENOID DRIVER. MOTOR DRIVER. A C FEATURES H High DC Current Gain G J B E : hFE=2000 Min. (VCE=2V, IC=1A) MAXIMUM RATINGS (Ta=25 CHARACTERISTIC ) D K SYMBOL RATING

Contextual Info: Transistor 2SD892, 2SD892A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 5.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

2SD893

Abstract: 2SD893A
Contextual Info: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

Contextual Info: HN1A07F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = −6V, IC = −400mA

Contextual Info: HN1A07F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = −6V IC = −400mA

Contextual Info: SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications

ITR04446

Abstract: ITR04587
Contextual Info: SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications

20M diode zener

Abstract: 102k1k DTDG14GP T100
Contextual Info: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)

Contextual Info: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20000.

zener diode

Abstract: Zener Diode 5A high hfe transistor transistor Ic 1A datasheet NPN digital transistor diode Zener DTDG14GP zener- diode "Zener Diode" TA DIODE ZENER
Contextual Info: Transistors Digital transistor built in resistor and zener diode Driver (60V,1A) DTDG14GP FFeatures 1) High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2) Low saturation voltage, typically VCE(sat) = 0.4V at IC /IB = 500mA / 5mA. 3) Built-in zener diode to protect the

KTC2804

Abstract: KTA1705
Contextual Info: SEMICONDUCTOR KTA1705 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR DC-DC CONVERTER, RELAY DRIVER A B D C E FEATURES F Low Saturation Voltage. : VCE sat -0.8V (IC=-2A, IB=-0.2A) G Excellent hFE Linearity and high hFE. H

2SA1015

Abstract: 2SC1815 2SA1015 GR 2sc1815 toshiba
Contextual Info: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications High voltage and high current: • Unit: mm VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.)

KTC2804

Abstract: KTA1705
Contextual Info: SEMICONDUCTOR KTA1705 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR DC-DC CONVERTER, RELAY DRIVER A B D C E FEATURES F ᴌLow Saturation Voltage. : VCE sat ⏊-0.8V (IC=-2A, IB=-0.2A) G ᴌExcellent hFE Linearity and high hFE.

Contextual Info: SEMICONDUCTOR KTA1705 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR DC-DC CONVERTER, RELAY DRIVER A B D C E FEATURES F Low Saturation Voltage. : VCE sat -0.8V (IC=-2A, IB=-0.2A) G Excellent hFE Linearity and high hFE. H

transistor 2sc1841

Abstract: 2SC1841 PA33 to92 af power amplifier "low speed switching transistor"
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC1841 The 2SC1841 is designed for use in AF amplifier, driver and low speed switching. PACKAGE DIMENSIONS in millimeters inches 5.2 MAX. FEATURES • High Voltage V CE0 : 120 V • High hFE hFE : 600 TYP. (V Ce = 6.0 V, lc = 1.0 mA)

2SA1740

Abstract: 2SC4548 ITR04445
Contextual Info: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.

M28S

Abstract: M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio output driver amplifier * General purpose switch

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1  FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation  3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch