DRAM MEMORY 256KX4 Search Results

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

Contextual Info: DRAM Dynamic RAM Random Access Memory DIP LH64256CD-70 256Kx4 (70 ns) (DIP)

Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung

AM20

Abstract: CMP12 SM5901AF CAS-000 MN662
Contextual Info: SM5901AF compression and non compression type anti-shock memory controller with built-in 1M DRAM NIPPON PRECISION CIRCUITS INC. Overview 1M DRAM can be connected to expand the memory to 2M bits. Digital attenuator, soft mute and related functions are also incorporated. It operates from

CMP12

Abstract: SM5901AF
Contextual Info: DISCONTINUED PRODUCT SM5901AF compression and non compression type anti-shock memory controller with built-in 1M DRAM NIPPON PRECISION CIRCUITS INC. Overview Features •Digital attenuator im ina - 2-channel processing 1M DRAM can be connected to expand the memory to 2M bits. Digital attenuator, soft mute and related functions are also incorporated. It operates from

Contextual Info: SAMSUNG ELECTRONICS INC 42E D B 7 ^ 4 1 4 5 Q010402 4 KMM58256BN DRAM MODULES u M U 5 -n 25 6K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN Is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­

Contextual Info: MITSUBISHI <DIGITAL ASSP> M 66200A P/ AFP DRAM C O N T R O LLE R DESCRIPTION The M66200AP/AFP is a semiconductor integrated circuit for 256K- and 1M-bit CMOS-process DRAM controllers. The device can control all necessary DRAM signals, includ­ ing MPU, RAS and CAS memory control signals of signals

mask ROM

Abstract: 1M Flash Memory PCMCIA Card 250b2 PCMCIA SRAM Card
Contextual Info: O B J OVERVIEW PRODUCT OVERVIEW DRAM CARD PRODUCTS Group Memory Capacity Configuration Model Name 3 PRODUCT OVERVIEW O K I Semiconductor SRAM CARD PRODUCTS Group 4 Memory Capacity Attribute Model Name PRODUCT OVERVIEW

Contextual Info: SAMSUNG ELECTRONICS INC t.7E D • 7^1 4 1 4 2 DQlSQSfl 3 m I KMM536512CH SMGK DRAM MODULES 512Kx36 DRAM SIMM Memory Module This SIMM is the x36 built on x40 board FEATURES GENERAL DESCRIPTION • Performance range: KMM536512CH-6 • • • • • •

DG37

Contextual Info: KMM540512C/CG/CM DRAM MODULES 512 K X 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: Í rac tcAc I rc KMM540512C-6 60ns 15ns 110ns KMM540512C-7 70ns 20ns 130ns KMM540512C-8 80ns 25ns 150ns The Samsung KMM540512C is a 512K bits x 40 Dynamic

Contextual Info: SAMSUNG ELECTRONICS 42E D INC • 7^4142 KMM540512B □ 0 1 Q 543 □ BiSflGK DRAM MODULES 512K X 40 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C tR C KMM540512B- 7 70ns 80ns 20 ns 20 ns

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM36256 256K x 36 Bit Dynamic Random Access Memory Module The MCM36256S is a 9M, dynamic random access memory DRAM module or­ ganized as 262,144 x 36 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM514256A DRAMs housed in 20/26 J-lead small out­

DRAM 256kx4

Abstract: KM44C256CLP-8 KM44C256CLJ
Contextual Info: CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM44C256

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C256CL_CM O S DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized tor high performance applications

KM44C256CJ-7

Abstract: KM44C256CJ-6 KM44C256CP-6 KM44C256CP-8 KM44C256CZ-7 KM44C256CJ6 KM44C256CJ7 km44c256cj KM44C256CT-7 KM44C256CZ
Contextual Info: / KM44C256C CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random tecess Memory. Its design is optimized for high performance applications such as

DRAM 256kx4

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: hay a » 9a KM424C256 CMOS VIDEO RAM 256KX4 Bit CMOS VIDEO RAM GENERAL DESCRIPTION FEATURES The Samsung KM424C256 is a CMOS 2 5 6 K x 4 bit Dual Port DRAM. It consists of a 256K x 4 dynamic ran­ dom access memory RAM port and 512 x 4 static serial access memory (SAM) port. The RAM and SAM ports

256kx4

Abstract: MB81C1000A dram memory 256kx4
Contextual Info: Fujitsu Microelectronics, Inc. offers a wide variety of Random Access Memory products. The Asynchronous DRAM product line offers densities ranging from 1 megabit through 16 megabit and with a wide variety of organizations and options. 1 Mbit Density 853k 256Kx4 Fast Page Mode, 5V MB81C4256A

KMM59256BN

Abstract: KM44C256BJ
Contextual Info: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­

km44c256cp-7

Abstract: 256CP-6 KM44C256CJ-7 nl142 256CP-8 AE12A 44C256C anyk
Contextual Info: KM44C256C CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 256C is a C M O S high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications such as

km44c256c

Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Contextual Info: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications