DQS10 Search Results
DQS10 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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DQS-100-1000 | Synergy Microwave | HYBRIDS 100 to 1000 MHz | Original | 231.46KB | 4 | ||
DQS-100-500 | Synergy Microwave | Hybrid (90 degree) | Original | 93.28KB | 8 | ||
DQS-10-100 | Synergy Microwave | Hybrid (90 degree) | Original | 93.28KB | 8 | ||
DQS-10-50 | Synergy Microwave | Hybrid (90 degree) | Original | 93.28KB | 8 |
DQS10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs |
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240PIN 1024MB 64Mx8 TS128MQR72V5J TS128MQR72V5J 72bits DDR2-533 240-pin | |
Contextual Info: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual |
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240-Pin MT18KDF51272PDZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83aa70c0 kdf18c512x72pdz | |
Contextual Info: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module |
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240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz | |
DDR2-667
Abstract: PC2-5300 SSTL-18
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NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 84-ball DDR2-667 PC2-5300 SSTL-18 | |
NT512T64U88A0BY-37B
Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
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NT512T64U88A0F NT512T64U88A0B NT512T64U88A0BY NT1GT64U8HA0F NT1GT64U8HA0B NT1GT64U8HA0BY 512MB: 240pin 64Mx8 240-pin NT512T64U88A0BY-37B NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A | |
DDR2-400
Abstract: DDR2-533 K4T56043QF K4T56083QF
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256MB, 512MB, 240pin 256Mb 72-bit M393T3253FG0-CD5/CC 256MB 32Mx72 DDR2-400 DDR2-533 K4T56043QF K4T56083QF | |
DDR400
Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
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256MB, 512MB, DDR400 60FBGA) 184pin 256Mb 200mil K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC | |
DDR200
Abstract: DDR266A DDR266B M312L2923MT0
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M312L2923MT0 184pin 128Mx72 64Mx72 64Mx8 72-bit DDR266A DDR200 DDR266A DDR266B M312L2923MT0 | |
dm 533
Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
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512MB, 240pin 512Mb 72-bit M393T6553BG0-CD5/CC 512MB 64Mx72 64Mx8 K4T51083QB) dm 533 K4T5108 M393T5750BS0-CD5 DDR2-533 | |
Contextual Info: M383L6423DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6423DTS 184pin Registered DDR SDRAM MODULE Revision History |
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M383L6423DTS 184pin 512MB 64Mx72 32Mx72 32Mx8 72-bit | |
SLD-K6
Abstract: SMS-204 SMD-C5 QML-201 sms 905
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OCR Scan |
QMS-903. QMS-904. QMS-905. QMS-906. QMS-907. QMS-914 QMS-924 QMS-934. QMS-944. QMSP-901. SLD-K6 SMS-204 SMD-C5 QML-201 sms 905 | |
Contextual Info: 90 HYBRIDS WIDEBAND SURFACE- MOUNT 8 Pin-Relay Header FREQUENCY RANGE AMPLITUDE UNBALANCE (dB) TYP/MAX PHASE UNBALANCE (Degrees) TYP/MAX ISOLATION (dB) (MHz) INSERTION LOSS (dB) TYP/MAX 3-32 5-50 10-50 10-100 15-150 20-100 20-200 1.0/1.5 1.0/1.5 0.8/1.0 |
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DQS-50-500 DQS-60-300 DQS-70-350 DQS-80-400 DQS-90-450 DQS-100-500 | |
100MHZ
Abstract: 133MHZ PC200 V827332U04S
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V827332U04S TSOPII-66 V827332U04S T52-3775 100MHZ 133MHZ PC200 | |
MTI BDContextual Info: ADVANCE 8, 16 MEG x 72 DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872A, MT18VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • 184-pin dual in-line memory module DIMM • Utilizes 100 MHz and 133 MHz DDR SDRAM |
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MT9VDDT872A, MT18VDDT1672A 184-pin 128MB MTI BD | |
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cc 052Contextual Info: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board. |
OCR Scan |
THMD51E30B70 THMD51E30B 864-word 72-bit TC59SM803BFT 72-bit Refre15 cc 052 | |
DQS-10-100
Abstract: package Synergy Microwave 30 MHz phase shifters Synergy Microwave
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DQS-10-100 DQS-10-100 package Synergy Microwave 30 MHz phase shifters Synergy Microwave | |
Contextual Info: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered |
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VL33B1K68F-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K68F 28-bit 240-pin 240-pin, | |
a13b 5 pin
Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
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IDTAMB0480 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH a13b 5 pin A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin | |
DTM63614Contextual Info: DTM63614 1GB-128M x 72, 184 Pin Registered DDR SDRAM DIMM Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM Auto & self refresh capability SSTL_2 compatible inputs and outputs VDD/VDDQ= 2.5V +/- 0.2V MRS cycle, with address key, programs Latency Access |
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DTM63614 1GB-128M 266MHz/CL 200MHz/CL 133MHz 184-pin DTM63614 DTM6361ANCE 100MHz) DQ0-DQ63, | |
DDR2-400
Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
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EBE20RE4ABFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0873E30 DDR2-400 DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820 | |
M383L3223BT1
Abstract: PC200
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M383L3223BT1 184pin 256MB 32Mx72 32Mx8 72-bit 133Mhz) M383L3223BT1 PC200 | |
k3661
Abstract: DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L
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HYMD212G726K4-K/H/L 128Mx72 HYMD212G726K4-K/H/L 184-pin HynixHYMD212G726K4-K/H/L 128Mx4 400mil 184pin k3661 DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L | |
EBE10AD4AGFA-6E-E
Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
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EBE10AD4AGFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0865E11 EBE10AD4AGFA-6E-E DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11 | |
Contextual Info: V826616J24SC 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply |
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V826616J24SC TSOPII-66 DDR400 |