DQ201AD Search Results

Contextual Info: UG3001-UG3005 Vishay Lite-On Power Semiconductor 3.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

diode SB560

Contextual Info: SB520-SB560 Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 150A peak

Contextual Info: 1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 125A peak • Plastic m aterial - UL R ecognition flam m ability

Contextual Info: HIE D TAIWAN LITON ELECTRONIC U T E H iH • flflBSb'iS D0QM23H 110 » T L I T KBPC3005 thru 310 SEMICONDUCTORS 'V ' i 'h - v s VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere« PBPC-3 .445 111.3 FEATURES • • Rating to 1000V PRV Surge overload rating to 45 Amperes peak

80 ria 120

Abstract: marking CODE GA SR502 SR520
Contextual Info: % TAIWAN SEMICONDUCTOR SR502 - SR520 5.0 AMPS. Schottky Barrier Rectifiers DQ-201AD RoHS COMPLIANCE -TÆH- F e atures 4- ^ ^ •<> ^ Low p o w e r loss, high efficicncy. High current capability, Low VF. High re liab ility High surge current capability.

IN6817

Abstract: IN5822 SR5045 sr560 HER207 iN6818 in6819 SFa5 SR540 IN5818
Contextual Info: RECTRON LT» 24E D • T ~ 0 l-0 f 7blOS45 0D000G5 S ■ SCHOTTKY BARRIER RECTIFIERS O PERATIN G TEM P ER A T U R E RANGE 20V to 45V: -6 5 ° C to +125°C, 50V to 60V: -6 5 °C to +150' STO RAG E TEM P ER A T U R E -6 5 °C to +150°G TYPE Maximum Peak Reverse

1N4007 sma

Abstract: P600I D0214AC SMA D0-214AB BY359-1500 BY228-1500 BYX90G 1N4003 1N4004 1N4007
Contextual Info: MHTEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru electronics Ten: 095 739-09-95 C T a H A a p T H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: iFmax [A] 1N4002 1N4003 1N4004 1N4005 1N4007 V Rmax [B] 100 200 400 600 1000 If [A] 1,0 1,0 1,0 V f npw [B] 1,1 1,1

ru 94v-01

Abstract: P15J BY126 BY127 1n5624g BY227
Contextual Info: :n l 07 iwstr/ power D ElI 30^0137 000233’=] 0 G P 1 5 S E R IE S „ T - 0 / -/S - ^ M IN IA TU R E G L A S S P A S S IV A T Ë D J U N C T IO N P L A S T IC R E C T I F IE R VOLTAGE RANGE 50 to 1000 Volts C U R R EN T 1.5 Amperes FEA TU R ES DO-15 • High temperature metallurgically bonded— no

Contextual Info: FAST RECOVERY GLASS PASSIVATED RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C Maximum Peak ;'f! JilSflftMif? Voltage Maximum Average • Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ TA V PK Maximum Reverse Recovery Time Maximum Reverse

IN5822

Abstract: IN5817 IN5819 IN5821 IN5820
Contextual Info: 5. S C H O T T K Y B A R R IE R R EC TIFIER PIV Peak Inverse Voltage MAX AVG Rectified C urrent @ Half W ave Res. Load 60Hz TYPE MAX FWD Peak Surge Current -K-60 Hz Superimposed ) I (Surge) FM TA MAX Reverse Current @PIV Voltage @25°C Ta 1R MAX Forw ard Voltage

Contextual Info: MCC 5 .0 AMPERE H IG H E FFIC IE N T R E C TIFIE R / DQ-201AD HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 6 .0 50 100 200 300 400 600 800 1000 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 55 55 55 55 55 55 55 55 200 200 200 200 200 200 200 200 Package Outline Pg. A-1

Lite-On Power Semiconductor

Abstract: VISHAY diode MARKING er diode sb340
Contextual Info: SB320-SB360 Vishay Lite-On Power Semiconductor 3.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 80A peak

Contextual Info: SF30AG-SF30JG Vishay Lite-On Power Semiconductor 3.0A Super-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

Contextual Info: PR3001G-PR3007G Vishay Lite-On Power Semiconductor ▼ 3.0A Fast Recovery Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd

Contextual Info: SD830-SD845 Vishay Lite-On Power Semiconductor ▼ 8A Schottky Barrier Rectifiers Features • High current capability and low forward voltage drop • High surge capability • Guard ring for transient protection • Low power loss, high efficiency • Plastic material has UL flammability

Contextual Info: GI500 THRU GI510 MEDIUM CURRENT PLASTIC RECTIFIER VOLTAGE - 50 to 1000 Volts C U R R EN T - 3.0 Amperes FEATURES ♦ High surge current capability DQ-201AD .210 5.31 . 190(4 .8 ] ♦ Plastic package has Underwriters Laboratory Flammability Classification 94 V -0

SF30DG

Contextual Info: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current

CR3U-060

Abstract: CR3U-010 CR3U-020 CR3U-040 CR3U-100
Contextual Info: Datasheet Central CR3U-010 SERIES ULTRA FAST RECOVERY RECTIFIER 3.0 AMP, 100 THRU 1000 VOLTS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DQ-201AD CASE Manufacturers of World Class Discrete Semiconductors

1N4005G

Abstract: 1N4006G 1N4003G
Contextual Info: GLASS PASSIVATED RECTIFIERS i i 1" • • i •'« - Io A PACKAGE \ 1.0 i " 1.5 DO-41 O U T L IN E 3.0 D O - 15 - 0 .8 DQ-201AD — 1.2 - 0 .8 \ ( m m / T y p .) \ V rrm 5.0 6.34 - j |—2.6 I ,| — b 4 8.8 r \ CV o 1 t s ) ! \ 50 1N4001G RL151G RL201G

h311

Contextual Info: LEAD FORMING SPECIFICATIONS Available for buk packaging only D O -41 Unit : mm I D O -15 A A B H01 12.5 ± 1.0 H02 1 0 .0 1 0.5 H02-1 10.0 ± 0.5 H 02-2 1 0 .0 1 0.5 H02-3 H 02-4 H02-5 B [ A A B B H 03 -3 1 2 .5 1 0.5 8 . 5 1 0.5 H11 1 2 .5 1 0.5 8 . 4 1 0.5

SR504

Abstract: cny 42 SR502 SR503 SR505 SR506
Contextual Info: SR502thru s TSC SR506 5.0 AMPS. SCHOTTKY BARRIER RECTIFIERS DQ-201AD FEATURES * Low forward voltage drop T * High current capability •220 5.6 * High reliability 1.0 (25.4) .197 <5.0) DIA. * High surge current capability MECHANICAL DATA MIN. Li Q * Case: D 0*201AD Molded plastic

Contextual Info: 1N5820-1N5822 Vishay Lite-On Power Semiconductor 3.0A Schottky Barrier Rectifiers Features • S chottky barrier chip • Guard ring die construction fo r tran sien t p ro tec­ tion • High surge capability • Low pow er loss, high efficiency • For use in low voltage, high freq ue n cy inverters,

Contextual Info: UF3001-UF3007 Vishay Lite-On Power Semiconductor 3.0A U ltra-Fast Rectifier Features • D iffu se d ju n c tio n • U ltra -fa s t s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility a n d lo w fo rw a rd v o lta g e d ro p •

PR3002 diode

Contextual Info: PR3001-PR3005 Vishay Lite-On Power Semiconductor 3.0A Fast Recovery Rectifier Features • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard voltage drop • Surge overload rating to 150A peak • Low reverse leakage current