3002G Search Results

TRM-3002G

Abstract: TRM-3002AG TRM3002G
Contextual Info: Optoway TRM-3002G 1 * TRM-3002G / TRM-3002TG / TRM-3002AG / TRM-3002ATG 5V / 1310 nm / 155 Mbps RoHS Compliant Optical Multi-Mode Transceiver

3001G

Abstract: 3007G PR3001G PR3007G
Contextual Info: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 360 800 / 720 ± 20 2750 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A

3001G

Abstract: 3007G PR3001G PR3007G
Contextual Info: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

3007G

Abstract: 3004G HER3001G HER3007G 3001G 3003g 3005G
Contextual Info: HER3001G thru HER3007G Glass Passivated High Efficient Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes Features ‹ Glass passivated chip ‹ Ultra fast switching for high efficiency ‹ Low reverse leakage current ‹ Low forward voltage drop

Contextual Info: HER3001G thru HER3007G 3.0 Amps. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Forward Current 3.0 Amperes Features ‹ ‹ ‹ ‹ ‹ ‹ Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop

Contextual Info: LITE ON POWER SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current

Contextual Info: LITEME SEMICONDUCTORS PR3001G thru PR3007G V O L T A G E RANGE 50 to 1000 V olts CURRENT 3.0 Amperes FEATURES • DO-201 AD Low cost • Glass passivated ju n c tio n • Low leakage • Low forw ard voltage drop • High cu rre n t cap ability • • 210 5.3

3001G

Abstract: PR3001G PR3007G
Contextual Info: PR3001G “ PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak

Contextual Info: PR3001G-PR3007G Vishay Lite-On Power Semiconductor ▼ 3.0A Fast Recovery Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd

3007g

Abstract: 3001G PR3001G PR3007G
Contextual Info: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak

SKM 195 Gb 123 IGBT

Abstract: 9v DC motor with reverse and forward
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 400 / 330 800 / 660 ± 20 2500 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A

SVI 3003

Abstract: svi 4004 KBJ 3510 PBDF153 N5406G PBP205 1N 4007 SMD L3040PT d3g smd P2506W
Contextual Info: QUICK REFERENCE TABLE FOR SWITCHING RECTIFIERS SC H O TTK Y B A R R IE R R E C T IF IE R S -^Ç R V V TY PE NO. 30 20 35 45 40 50 60 CASE PAGE \ 1N 5817 1N 5818 - 1N 5819 - SB120 SB130 - SB140 - 1 N 5820 1N 5821 - 1N 5822 - - DO-41 30 LE A D 1 SB150 _ SB160

3001G

Abstract: PR3001G PR3007G
Contextual Info: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current

Contextual Info: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current

Contextual Info: LITEM CI SEMICONDUCTORS PR3001G thru PR3007G DO-201 AD FEATURES • L o w cost • Glass passivated ju n c tio n • L o w leakage • L o w f o r w a r d v o lta g e d ro p • H ig h c u r r e n t c a p a b ility • •210 IS.3I .188 4.8 Li E a sily c le a n e d w it h F r e o n , A lc o h o l, C h lo ro th e n e and

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: V1.1 2.54 TYPE L_ >1 □ □ □ □ □ □ □ □ a M -M SYM A A 0.64 □ |□ □ □ □ □ □ □ □ □ □ - r p = =P=T |I DISCRETION DATE REVISIONS APPROVED SYM A A DISCRETION DATE APPROVED ± r SPECIFICATION: CONTACT RESISTANCE: 30MOHM MAX. INSULATOR RESISTANCE: 1000M0HM MAX.

Contextual Info: s e MIKROn Absolute Maximum Ratings Symbol Units VcES lc = 20 k£2 T c a s e = 25/80 °C ICM Tcase VcGR R ge = 25/80 °C; tp = 1 ms V g es P fo t p e r IG B T , Tcase = 25 °C T j, T s tg V sol humidity climate Values Conditions ' AC, 1 min. DIN 40 040

Contextual Info: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

Contextual Info: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

3007g

Abstract: 3001G PR3001G PR3007G
Contextual Info: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak

Contextual Info: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current

Contextual Info: se MIKROn Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc = 20 k£2 T c a s e = 25/80 °C ICM Tcase Rge = 25/80 °C; tp = 1 ms V ges P to t p e r IG B T , Tcase = 25 °C T j, T s tg V sol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 T.1