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Samtec Inc TW-30-07-G-T-430-125 TW-30-07-G-T-430-125
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	TW-30-07-G-T-430-125		98		6	1 - 10 $14.75 100 $12.06 1000 $12.06 10000 $12.06	Buy Now
Mouser Electronics	TW-30-07-G-T-430-125					1 $17.02 10 $17.02 100 $14.92 1000 $12.97 10000 $12.97	Get Quote
onsemi MJE13007G Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MJE13007G		21		1	1 $1.79 10 $1.08 100 $0.83 1000 $0.74 10000 $0.67	Buy Now
Mouser Electronics	MJE13007G					1 $2.42 10 $1.41 100 $1.00 1000 $0.75 10000 $0.66	Get Quote
Newark	MJE13007G	Bulk	131		1	1 $2.50 10 $1.53 100 $1.15 1000 $1.10 10000 $1.06	Buy Now
RS	MJE13007G	Bulk			5	1 - 10 $1.72 100 $1.51 1000 $1.51 10000 $1.51	Get Quote
Bristol Electronics	MJE13007G		150		1	1 $1.38 10 $1.38 100 $0.51 1000 $0.51 10000 $0.51	Buy Now

Avnet Asia	MJE13007G			43 Weeks	1,300	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	MJE13007G			30 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	MJE13007G			31 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	MJE13007G		6,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	MJE13007G		18,815			1 - 10 - 100 $0.84 1000 $0.56 10000 $0.56	Buy Now
Balluff Inc BES 516-3007-G-E4-C-S49-00,3 Sensor: inductive; OUT: PNP / NO; 0÷1.5mm; 10÷30VDC; Ø4; 0.3m; IP67
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BES 516-3007-G-E4-C-S49-00,3		4		1	1 $103.27 10 $89.50 100 $89.50 1000 $89.50 10000 $89.50	Buy Now
Balluff Inc BES 516-3007-G-E4-C-PU-05 Sensor: inductive; OUT: PNP / NO; 0÷1.5mm; 10÷30VDC; Ø4; 2m; IP68
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BES 516-3007-G-E4-C-PU-05				1	1 $106.62 10 $92.86 100 $92.86 1000 $92.86 10000 $92.86	Get Quote
Vishay Intertechnologies MMB02070C3007GB200 Resistor: metal film; 300mΩ; SMD; 1W; ±2%; 350V; Ø2.2x5.8mm; L: 5.8mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MMB02070C3007GB200				2,000	1 - 10 - 100 - 1000 - 10000 $0.09	Get Quote
Avnet Abacus	MMB02070C3007GB200	Tape & Reel		15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	MMB02070C3007GB200			35 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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3007G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3001G Abstract: 3007G PR3001G PR3007G Contextual Info: LITE-ON SEMICONDUCTOR PR3001G thru 3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop	Original	pr3001g pr3007g do-201ad 01-dec-2000 +3kdef01 3001g 3007g	PDF
3001G Abstract: 3007G PR3001G PR3007G Contextual Info: LITE-ON SEMICONDUCTOR PR3001G thru 3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop	Original	pr3001g pr3007g do-201ad 3001g +13007g	PDF
3007G Abstract: 3004G HER3001G HER3007G 3001G 3003g 3005G Contextual Info: HER3001G thru 3007G Glass Passivated High Efficient Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes Features Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop	Original	her3001g her3007g do-201ad 100oc +53007g 3004g 3001g 3003g 3005g	PDF
Contextual Info: HER3001G thru 3007G 3.0 Amps. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Forward Current 3.0 Amperes Features Glass passivated chip Ultra fast switching for high efficiency Low reverse leakage current Low forward voltage drop	Original	her3001g her3007g do-201ad 100oc	PDF
Contextual Info: LITE ON POWER SEMICONDUCTOR PR3001G thru 3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current	Original	pr3001g pr3007g do-201ad 24-may-2000	PDF
3001G Abstract: PR3001G PR3007G Contextual Info: PR3001G “ 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak	OCR Scan	pr3001g pr3007g mil-std-202 do-201ad +2ds27003 3001g	PDF
Contextual Info: PR3001G-3007G Vishay Lite-On Power Semiconductor ▼ 3.0A Fast Recovery Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd	OCR Scan	pr3001g-pr3007g 3001g 3002g 300ibhay +2d-74025 24-jun-98	PDF
HER3007G Abstract: 3007G D0-201AD HER3001G Contextual Info: HER3001G thru 3007G 5VM5EMI SEMICONDUCTOR 3.0 Amps. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Forward Current 3.0 Amperes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ G la ss p a s s iv a te d chip U ltra fa st s w itch in g for h igh e ffic ie n c y	OCR Scan	her3001g her3007g d0-201ad her3003g +5her3004g r3007g r3006 dth30c 3007g	PDF
3007g Abstract: 3001G PR3001G PR3007G Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak	Original	pr3001g pr3007g do-201ad mil-std-202 +3ds27003 3007g 3001g	PDF
SVI 3003 Abstract: svi 4004 KBJ 3510 PBDF153 N5406G PBP205 1N 4007 SMD L3040PT d3g smd P2506W Contextual Info: QUICK REFERENCE TABLE FOR SWITCHING RECTIFIERS SC H O TTK Y B A R R IE R R E C T IF IE R S -^Ç R V V TY PE NO. 30 20 35 45 40 50 60 CASE PAGE \ 1N 5817 1N 5818 - 1N 5819 - SB120 SB130 - SB140 - 1 N 5820 1N 5821 - 1N 5822 - - DO-41 30 LE A D 1 SB150 _ SB160	OCR Scan	sb130 sb330 sb530 sb830 +16sb140 sb340 sb540 sb840 sbr540 sbr840 svi 3003 svi 4004 kbj 3510 pbdf153 n5406g pbp205 1n 4007 smd l3040pt d3g smd p2506w	PDF
3001G Abstract: PR3001G PR3007G Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current	OCR Scan	pr3001g pr3007g mil-std-202 dq-201ad +2ds27003 3001g	PDF
3001G Abstract: PR3001G PR3007G Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Fast Switching for High Efficiency Surge Overload Rating to 125A Peak B A Low Reverse Leakage Current A Lead Free Finish, RoHS Compliant Note 4	Original	pr3001g pr3007g do-201ad j-std-020c +3mil-std-202 ds27003 3001g	PDF
Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current	OCR Scan	pr3001g pr3007g do-201ad il-std-202 +1ds27003	PDF
Contextual Info: LITE-ON SEMICONDUCTOR PR3001G thru 3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop	Original	pr3001g pr3007g do-201ad	PDF

3007g Abstract: 3001G PR3001G PR3007G Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak	Original	pr3001g pr3007g do-201ad mil-std-202 +3ds27003 3007g 3001g	PDF
Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current	OCR Scan	pr3001g pr3007g do-201 mil-std-202 +210qni ds27003	PDF
3007G Abstract: PR3001G PR3002G PR3003G PR3004G PR3005G PR3006G PR3007G Contextual Info: PR3001G–3007G Vishay Lite–On Power Semiconductor 3.0A Fast Recovery Glass Passivated Rectifier Features D D D D Glass passivated die construction Diffused junction Fast switching for high efficiency High current capability and low forward voltage drop	Original	pr3001g pr3007g pr3002g pr3003g +5pr3004g pr3005g pr3006g d-74025 3007g	PDF
DO-201AD Abstract: DS27003 Contextual Info: PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 125A Peak	Original	pr3001g pr3007g do-201ad j-std-020c +7mil-std-202 pr3001g-b pr3001g-t pr3002g-b pr3002g-t pr3003g-b ds27003	PDF
3001G Abstract: PR3001G PR3007G Contextual Info: NOT RECOMMENDED FOR NEW DESIGN PR3001G - 3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • • • • • Glass Passivated Die Construction Fast Switching for High Efficiency Surge Overload Rating to 125A Peak Low Reverse Leakage Current	Original	pr3001g pr3007g do-201ad j-std-020c +3mil-std-202 ds27003 3001g	PDF

3007G Search Results

3007G Price and Stock

Samtec Inc TW-30-07-G-T-430-125

onsemi MJE13007G

Balluff Inc BES 516-3007-G-E4-C-S49-00,3

Balluff Inc BES 516-3007-G-E4-C-PU-05

Vishay Intertechnologies MMB02070C3007GB200

3007G Datasheets Context Search

3001G

3001G

3007G

3001G

HER3007G

3007g

SVI 3003

3001G

3001G

3007g

3007G

DO-201AD

3001G