DMN2013UFDE Search Results
DMN2013UFDE Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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DMN2013UFDE |
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20V N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 284.09KB | 6 | ||
DMN2013UFDE-7 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 10.5A U-DFN | Original | 6 | |||
DMN2013UFDEQ-7 |
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MOSFET BVDSS: 8V~24V U-DFN2020-6 | Original | 540.46KB | 8 |
DMN2013UFDE Price and Stock
Diodes Incorporated DMN2013UFDE-7MOSFET N-CH 20V 10.5A 6UDFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN2013UFDE-7 | Reel | 3,000 |
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DMN2013UFDE-7 | Reel | 12 Weeks | 3,000 |
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DMN2013UFDE-7 | 1,667 |
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DMN2013UFDE-7 | Cut Tape | 2,825 | 1 |
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DMN2013UFDE-7 | Bulk | 50 |
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DMN2013UFDE-7 | 3,000 | 14 Weeks | 3,000 |
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DMN2013UFDE-7 | 15,000 | 1 |
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Diodes Incorporated DMN2013UFDEQ-7MOSFET BVDSS: 8V~24V U-DFN2020-6 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN2013UFDEQ-7 | Reel | 3,000 |
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Buy Now | ||||||
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DMN2013UFDEQ-7 | Reel | 16 Weeks | 3,000 |
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Buy Now | |||||
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DMN2013UFDEQ-7 |
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Get Quote |
DMN2013UFDE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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N6 marking diodeContextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm |
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DMN2013UFDE AEC-Q101 DS35701 N6 marking diode | |
marking n6Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm |
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DMN2013UFDE AEC-Q101 DS35701 marking n6 | |
Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm |
Original |
DMN2013UFDE AEC-Q101 DS35701 | |
Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm |
Original |
DMN2013UFDE AEC-Q101 DS35701 | |
U-DFN2020-6Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON MAX Package ID TA = +25°C • 0.6mm profile – ideal for low profile applications PCB footprint of 4mm 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13mΩ @ VGS = 2.5V |
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DMN2013UFDE U-DFN2020-6 AEC-Q101 DS35701 | |
marking n6Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) MAX ID TA = +25°C Package 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V 20V 30mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V U-DFN2020-6 Type E U-DFN2020-6 Type E U-DFN2020-6 Type E |
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DMN2013UFDE U-DFN2020-6 AEC-Q101 DS35701 marking n6 | |
NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
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AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |