DS35701 Search Results

N6 marking diode

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

marking n6

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

U-DFN2020-6

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON MAX Package ID TA = +25°C • 0.6mm profile – ideal for low profile applications  PCB footprint of 4mm 11m @ VGS = 4.5V U-DFN2020-6 10.5A  Low Gate Threshold Voltage 13mΩ @ VGS = 2.5V

marking n6

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) MAX ID TA = +25°C Package 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V 20V 30mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V U-DFN2020-6 Type E U-DFN2020-6 Type E U-DFN2020-6 Type E