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    Batronix Elektronik

    Batronix Elektronik PLCC32-DIP32 PRO

    Adaptor, Plcc32-Dip32; |Batronix PLCC32-DIP32 PRO
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    Newark PLCC32-DIP32 PRO Bulk 36 1
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    DIP32P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC551001BPL-10

    Abstract: TC551001BPL-7
    Contextual Info: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551001 BPL / BFL / BFTL / BTRL - 70 TC551001 BPL / BFL / BFTL / BTRL - 85 TC551001 BPL/ BFL/ BFTL/ BTRL-10 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory SRAM organized as


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    tc551001btrl-10072-wordtc551001bpl/bfl/bftl/btrl+5576-bittsop32-p-0820tc551001bpl--tc551001bpl-10tc551001bpl-7 PDF

    TC518128

    Abstract: tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70
    Contextual Info: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC 5 1 8 1 2 8 C P L /C S P L /C F L / CFWL / CFTL - 7 0 , TC 5 1 8 1 2 8 CPL / CSPL / CFL / CFWL / CFTL - 8 0 TC 5 1 8 1 2 8 CPL / C S PL/ CFL / CFWL / CFTL - 1 0 , TC 5 1 8 1 2 8 CPL/ CSPL / CFL/ CFW L/ CFTL - 7 0 L


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    072-word18128c578-bittc518128cfwl-70+8tc518128cfwl-80tc518128cfwl-10tc518128cpl--tc518128tc518128cfl80tc518128cfl-80cfl circuit diagramstc518128cfl-70 PDF

    TC551001APL

    Abstract: TC551001AF 324GND toshiba lv 104
    Contextual Info: TOSHIBA TC551001APL/AFL/AFIL/ATRL-70L/85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­


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    tc551001apl/afl/afil/atrl-70l/85l/10ltc551001aplthetc551001apl100pf+3tc551001af324gndtoshiba lv 104 PDF

    TC518129AFwl

    Contextual Info: TOSHIBA TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV SILICON GATE CM O S 131,072 W ORD x 8 BIT C M O S PSEUDO STATIC RAM D escription The TC5181 29A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV


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    tc518129apl/afl/afwl-80lv/lolv/12lvtc518129aftl80lv/lolv/12lvtc5181tc518129a-lv+5d-112tc518129apl/afl/afwl/aftl-80lv/1olv/12lvd-113tc518129apl/afl/afwl/aftl-80lv/1tc518129afwl PDF

    TC551001a

    Contextual Info: TOSHIBA TC 551001APL/AFL/AFnyATRL-70L/85L/10L LI SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­


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    551001apl/afl/afnyatrl-70l/85l/10ltc551001aplthetc551001apltc551001a PDF

    TC518128B

    Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
    Contextual Info: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes


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    tc518128btc5181tc518128bplspl/bfl/bfwl/bftl-70/80/10+5tc518128bpl/bspl/bfl/bfwl/bftl-70l/80l/1transistor bfw 11 pin diagramtc518128tc518128bflpin diagram of transistor bfw 11 PDF

    SRM20100LRM70

    Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic


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    srm20100l_70ns/85ns/100nssrm2017o/85/ic+7srm20100lsrm20100l85srm20100liosrm20100l70/85/10srm201ool70/85/1op6-32pinsrm20100lrm70 PDF

    transistor D128

    Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
    Contextual Info: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes


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    tc518129bpl/bspl/bfl/bfwl/bfil-70/80/10c518129bpl/bspl/bfl/bfwl/bfil-70l/80l/10ltc518129bthetc518129b+10d-132tc518129bpl/bspl/bfl/bfwl/bftl-70/80/10c518129bpl/bspl/bfl/bfwl/bftl-70l/80l/1old-133transistor d128tc518129d128 transistortransistor d133ksh 200 transistor equivalenttransistor 80l PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS702–00009–3v0-E 8-bit Microcontrollers New 8FX MB95630H Series • DESCRIPTION The MB95630H Series is a series of general-purpose, single-chip microcontrollers. In addition to a compact


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    ds702mb95630hf632k/f633h/f633k/f634h/f634k/f636h/f636k16-bit PDF

    MB95F636K

    Abstract: MB95630H MB95F634K MB95F633K
    Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


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    mb95f636kmb95630hmb95f634kmb95f633k PDF

    Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


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    PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS702–00009–0v01-E 8-bit Microcontrollers New 8FX MB95630H Series • DESCRIPTION The MB95630H Series is a series of general-purpose, single-chip microcontrollers. In addition to a compact


    Original
    ds7020v01-emb95630hf632k/f633h/f633k/f634h/f634k/f636h/f636k+116-bit PDF

    Contextual Info: O K I Semiconductor MSM27C401AZB 524,288-Word x 8-Bit One Time PROM DESCRIPTION word^x^bü^Th^MSM27C401^A7RCtriCa^l^ Pr0Srami" able Read-Only Memory organized as 524,288 the B ? PerateS,°n 3 Slngle 5 V P °wer suPP]y ^ d is TTL compatible. Since a synchronously, external clocks are not required, making the MSM27-


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    msm27c401azb288-wordmsm27c4otmsm27-+532-pindip32-p-600op32-p-525-kb72424gmsm27c401a2b PDF

    ba7254s

    Abstract: BA7254 lem lt 100 p TMR head preamplifier 8215m
    Contextual Info: RO HM CO LTD , MDE 7 f l s a cm oocm ^cn b H R H N BA7254S VTRffl IC /IC s for VTR Applications " 7 ^ 7 7 -2 / BA7254 X 4 v * \ s > 7 ° Switchless Video Signal P B /R E C Amplifier #fl2'tfj£l§!/D im ensions U n it: mm BA7254sti, v r n m m m ± y > y x %


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    TSOP32-P-0820

    Abstract: TC551001BFL TC551001BPL Electronic components book TC551001BFTL TC551001BTRL
    Contextual Info: TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an


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    tc551001bpl/bfl/bftl/btrl-70l/85ltc551001bpltsop32-p-0820tc551001bfl+3electronic components booktc551001bftltc551001btrl PDF

    DIP32

    Abstract: MSM538031E TSOP32
    Contextual Info: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    msm538031e576-wordmsm538031e1150ns20ma3+8120ns25ma3msm538031e-xxrs32dipdip32-p-60032sopop32-p-525-kdip32tsop32 PDF

    Contextual Info: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


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    tc551001bpl/bfl/bftl/btrl/bstl/bsrl-70072-wordtc551001bpl/bfl/bftl/btrl/bstl/bsrl+2576-bit32-p-0820-0 PDF

    Contextual Info: TOSHIBA RDR724Ö 002ñfl40 544 TC551001BPL/BFL/BFTL/BTRL-70/85 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low


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    rdr724tc551001bpl/bfl/bftl/btrl-70/85tc551001bpl PDF

    Contextual Info: TOSHIBA TC551001BPL/BFL/BFTiyBTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with, an operating cur­


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    tc551001bpl/bfl/bftiybtrl-70/85/10tc551001bpl PDF

    Contextual Info: 131,072 W 0 R D S x 8 B IT ST A T IC R A M PRELIMINARY D ESCRIPTIO N The TC551001API is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques


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    tc551001api100nsb-108tc551001api/afi/afti/atri+4dip32-p-600b-109tc551001b-110 PDF

    Contextual Info: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128 CPL / CFL / CFWL / CFTL - 70V TC518128 CPL / CFL / CFWL / CFTL -80V TC518128 CPL / CFL / CFWL / CFTL -10V DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM


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    tc518128072-wordtc518128cpl/cfl/cfwl/cftl578-bit+3op32-p-5251o25ihitc518128cfwl PDF

    Contextual Info: TOSHIBA TC551001APL/AFL/AFIL/ATRLr70]V85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­


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    tc551001apl/afl/afil/atrlr70v85l/10ltc551001apltc551001 PDF

    TC551001BFTI

    Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85L/1 OL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,


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    tc551001bpi/bfi/bfti/btri-85l/1tc551001bpltc551001n724fl+1tc551001bfti PDF

    Contextual Info: TO SHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM


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    tc551001cpi/cfi/cfti/ctri/csti/csri-70tc551001cpi/cfi/cfti/ctri/csti/csri576-bit32-p-0820-0+132-p-0 PDF