DIODES BYW 88 R Search Results

Contextual Info: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 

Contextual Info: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 

Contextual Info: £ÿj SGS-THOMSON D ts œ iL IIê M i» BYW 88-50 1000 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS limiting values Parameter Symbol Value Unit A Average Forward Current*

42R2

Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

42R2

Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Contextual Info: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

diodes byw 88 600 r

Abstract: DRA402 1N 414 B DRA 402 byw 600 214200 diodes byw 88 r diode 1n 1348 B DRA404 diodes byw
Contextual Info: rzrj SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# jüDSosüHLigirmiKSDiss RECTIFIER DIODES RECTIFIER DIODES < 100 A Type •o VRRM ■f s m 10 ms VF / lF max BY 214- 50 BY 214-100 BY 214-200 BY 214-400 BY 214-600 BY 214-800 1 BY 214-1000(1) 1N 1N 1N 1N 1N

42r2

Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)

Diode BYW 56

Abstract: diodes byw
Contextual Info: BYW 27-50.BYW 27-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9

N5625

Abstract: diodes byw N5624 diodes byw 88 600 r
Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:

N5062

Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
Contextual Info: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

BYW29E-100

Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
Contextual Info: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast

diode BYW 64

Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Contextual Info: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

6052B

Abstract: U6052B 6051B U6050B 6050B TELEFUNKEN EL 156 22-RELAY Diode BYW 56 diode BYW 64 U6052
Contextual Info: 44E » E3 flTSDOTti D0iafl30 3 E3ALG6 . .y 6 0 5 0 B • U 6051 B • TELEFUNKEN ELECTRONIC U 6052 B LOCAL MULTIPLEX SYSTEM $ ,q - j ' Technology: Bipolar Application: ' • Transmitter U 6050B and receiver (U 6 0 5 1 B, U 6 0 5 2 B) for permanent scanning of 8 switch-positions,

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1