DIODE ZD 37 Search Results

diode sy 715

Contextual Info: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F

HD74AC157

Abstract: HD74AC157AFPEL HD74AC157ARPEL HD74AC157TELL TSSOP-16
Contextual Info: HD74AC157 Quad 2-Input Multiplexer REJ03D0252–0200Z Previous ADE-205-371 (Z Rev.2.00 Jul.16.2004 Description The HD74AC157 is a high-speed quad 2-input multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four outputs present the selected data in the true (noninverted) form. The

APT5014LVR

Contextual Info: APT5014LVR A d v a n ced W /Æ P o w e r Tec h n o lo g y • R soov 37a o.i4oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

hsch 3486 zero bias schottky diode

Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
Contextual Info: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,

Contextual Info: APT5014B2VR A d v a n ced W /Æ P o w e r Tec h n o lo g y • R soov 37a o.i4oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

TC74HC40102

Abstract: 74HC40103
Contextual Info: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC401Q3P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER_ The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology.

37400

Abstract: 627 DIODE ZD 222 D-68623 HTZ180D22K HTZ180D26K HTZ180D30K HTZ180D35K
Contextual Info: HTZ180D Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.3 A VRRM = 35000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ180D35K HTZ180D30K HTZ180D26K HTZ180D22K 35000 30000 26000 22000 37400 33000 28600 24200 CIRCUIT DIAGRAM

74HC40103

Contextual Info: TQSHIEA L OGIC/MEMORY 14E D I Q01ÛS76 T | _ TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER The TC74HC40102 and TC74HC401O3 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2M0S technology.

Contextual Info: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:

Germanium Diode OA90

Contextual Info: , Una. c-''j.a.ii.s.u*y ^^mi-donauctoi TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 OA90 Gold Bonded Germanium Diode FEATURES Low forward voltage drop—lowpowerconsumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

Contextual Info: ^£.mi-L.onauatoi iJ-^toaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N38A GOLD BONDED GERMANIUM DIODE FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

74HC40103

Contextual Info: SGS-THOMSON M54/74HC40102 M54/74HC40103 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGHSPEED fMAX = 40 MHz TYP. at Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 |iA (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

74HC40103

Contextual Info: Æ T S G S -T H O M S O N RiilD g^ [l[L[i TO[R!lö©i M54/74HC40102 M54/74HC40103 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGH SPEED fMAX = 34 MHz (Typ at VCC = 5V ■ LOW POWER DISSIPATION Ice = 4 (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

ic 40103

Abstract: 74HC40103
Contextual Info: F Z Z SCS-THOM SON M54/74HC40102 M54/74HC40103 ^ 7 # , EB lllLI gre©HDei 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGH SPEED fMAX = 34 MHz (Typ at Vcc = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY V N IH = V N I L = 28% Vcc (MIN.)

ic 40103

Abstract: hc40102 40103 cmos cmos divide-by-n 40103 hc40103 40102 74HC40102 CD 40103 BE 74HC40103
Contextual Info: SGS-THOMSON MOœ miOT «! M54/74HC40102 M54/74HC40103 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGHSPEED fMAx = 40 MHz TYP. at Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY Vnih = V n il = 28 % V cc (MIN.)

Contextual Info: T O SH IB A TC74HC40102,40103AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC40102AP, TC74HC40102AF TC74HC40103AP, TC74HC40103AF TC74HC40102AP/AF DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103AP/AF 8 - BIT BINARY PROGRAMMABLE DOWN COUNTER

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

ic 40103

Abstract: HC40102 hc40103 40103 74HC40103
Contextual Info: M54/74HC40102 M54/74HC40103 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS . . . . . . . . HIGH SPEED fMAX = 40 MHz TYP. at VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY

TC74HC40103A

Contextual Info: TOSHIBA TC74HC40102AP/AF TC74HC40103AP/AF TC 74H C 40102 Dual BCD Program m able Down Counter TC74HC40103 8-B it Binary Program mable Down Counter The TC74HC40102A and TC74HC40103A are high speed CMOS PROGRAMMABLE DOWN COUNTERS fabricated with silicon gate C2MOS technology.

40102B

Abstract: TC74HC40102AF TC74HC40102AP TC74HC40103AF TC74HC40103AP ctrdiv10 TC74HC40102A TC74HC40103A
Contextual Info: TOSHIBA TC74HC40102,40103AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC40102AP, TC74HC40102AF TC74HC40103AP, TC74HC40103AF TC74HC40102AP/AF DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103AP/AF 8 -BIT BINARY PROGRAMMABLE DOWN COUNTER