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    DIODE WJ Search Results

    DIODE WJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE WJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    lta 301

    Contextual Info: ¡C-WJ, iC-WJZ •Haus LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    300khz250ma500//alta 301 PDF

    Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    PDF

    74HCxx

    Abstract: IC-WJ-SO8 hcmos 74hcxx UF 407 Diode G003 G008 G010 iC-WJZ 470 uF 25 v Capacitor nF-47
    Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    d-5529474hcxxic-wj-so8hcmos 74hcxx+7uf 407 diodeg003g008g010ic-wjz470 uf 25 v capacitornf-47 PDF

    WJ 176

    Abstract: G003 G008 G010 90 NF block diagram 74HCXX IC
    Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor


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    wj 176g003g008g010+290 nf block diagram74hcxx ic PDF

    EAF42

    Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
    Contextual Info: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver­ wendung als HF-, ZF- oder NF-Verstärker


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    eaf427r02634110kilech41+8philips eaf 42ech 42philips diagram fr 310philips schemaphilips fr 310rg211ech42390sv PDF

    Laser diode driver ic

    Contextual Info: iC-WJ, iC-WJZ if f if ll LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA Averaging control of laser power Simple adjustment of the laser power via external resistor


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    300khz250malaser diode driver ic PDF

    IC 74hcxx

    Abstract: G103 CUT LASER DRIVER G104 G101 G102 G301 440nF
    Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER FEATURES APPLICATIONS ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor ♦ Adjustable watchdog at the switching input to protect the


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    300khz250maf9-6135-9292-0ic 74hcxx+7g103cut laser driverg104g101g102g301440nf PDF

    Contextual Info: iC-WJ, iC-WJZ LASER DIODE DRIVER FEATURES APPLICATIONS ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor ♦ Adjustable watchdog at the switching input to protect the


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    300khz250ma PDF

    amd FX PIN LAYOUT

    Abstract: G701
    Contextual Info: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode


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    200khz250maamd fx pin layoutg701 PDF

    zd6v8

    Abstract: G003 G008 G010 CG013
    Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA


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    d-55294zd6v8g003g008+2g010cg013 PDF

    Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA


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    170KW

    Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA


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    in350170kw PDF

    G003

    Abstract: G008 G010 iC-WJ SO8
    Contextual Info: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA


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    d-55294g003g008g010+1ic-wj so8 PDF

    MMBD201

    Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
    Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    mmbd2010t2phx34593fmmbd201bd201+8bd2010bd301mmbd2010318d-03mmbd101mmbd2010t1diode wj sot23mmbd3010t1 PDF

    Contextual Info: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola­


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    ndl5653pndl5600dndl5650dndl5600d1+4ndl5650d1ndl5604pndl5603pndl5654p PDF

    B455

    Abstract: NDL5081 IMDL5080 NDL5080 1310 nm laser diode
    Contextual Info: 30E D I b42?52S I 002=1554 =1 r - ^ i - g T7 r N E C E L E C T R ONI CS LASER DIODE INC NDL5080 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N NDL5080 is a 1310 nm laser diode especially designed for optical data communications. The DC-PBH Double Channel Planar


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    ndl5080310nmndl5081imdl5080+5b427s2sndls100tam57s5sb4551310 nm laser diode PDF

    SHINDENGEN DIODE

    Contextual Info: ÜîStsÊtxVW 7. Surface Mounting Device 7 0 S U tipe Super Past Recovery Diode Twin Diode Ifl-^ ä s E I OUTLINE DIMENSIONS DF20LC20U 200V 20A •S M D •e y -rx •trr3 5 n s •S R S * •D C / D C U V H - i ? • a n e . OA. •a « , s s. WjÉfèm mm


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    df20lc20ushindengen diode PDF

    se3-13

    Contextual Info: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.


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    se313se3-13 PDF

    IHW20N120R3

    Abstract: J127 9127 diode
    Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution


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    ihw20n120r3j-std-020jesd-022j127+19127 diode PDF

    DIODE WJ SOD323

    Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
    Contextual Info: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.


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    bzt52c2v0s-bzt52c39sod-323bzt52c2v4s-bzt52c51sbl/sszdb019+9diode wj sod323bzt52c2v0sbzt52c2v4sbzt52c2v7sbzt52c3v0sbzt52c3v3sbzt52c3v6sbzt52c3v9sbzt52c4v3s PDF

    IHW20N120R3

    Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
    Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution


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    ihw20n120r3j-std-020jesd-022j127+5h63-19p127e393h631wg 2 fk PDF

    dt61n

    Abstract: DT18N td18n td36n
    Contextual Info: Thyristor-diode-modules for current source inverters Type Vdrm V rrm It r m s m Itsm /¡2dt It a v M ^ C V TO rT (dí/dt)cr (dv/dt)cr R th J C RthCK ^vj max Outline V rrm (Thyr.) V (Diode) V A 10 ms, 10 ms tv j max Wj max 180 °el sin. tv j max tv j max DIN


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    dt61ndt18ntd18ntd36n PDF

    DIODE WJ SOD323

    Abstract: BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S
    Contextual Info: Surface mount zener diode BZT52C2V0S-BZT52C39S FEATURES Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode. Ultra-small surface mount package. SOD-323 ORDERING INFORMATION


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    bzt52c2v0s-bzt52c39sod-323bzt52c2v4s-bzt52c51sdiode wj sod323+8bzt52c3v3sbzt52c3v6sbzt52c3v9sbzt52c4v3sbzt52c4v7sbzt52c2v0sbzt52c2v4sbzt52c2v7s PDF

    diode w8 sod123

    Abstract: BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1
    Contextual Info: Surface mount zener diode FEATURES Pb z Planar die construction. 500mW power dissipation on ceramic PCB. General purpose, medium current. z Ideally suited for automated assembly processes. z z BZT52C2V4-BZT52C51 Lead-free APPLICATIONS z Zener diode. z Ultra-small surface mount package.


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    500mwbzt52c2v4-bzt52c51od-123diode w8 sod123+9bzt52c2v4bzt52c2v7bzt52c3v0bzt52c3v3bzt52c3v6bzt52c3v9bzt52c4v3bzt52c4v7bzt52c5v1 PDF