DIODE T418 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbS3131 OOEQ^Sl T CNX38 OPTOCOUPLER Optically coupled isolator consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r TTL integrated circuits. Features

Contextual Info: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

8 channel optocouplers

Abstract: TIL916 TIL915 optocouplers texas instruments Phototransistor til 81 diode Optocouplers QUAD Phototransistor Optocouplers
Contextual Info: TEXAS INSTR OPTO 35E D Ml a%]i75b GQ7b3M2 ^ • T l l b TIL915, TIL915A, TIL915B DUAL CHANNEL TIL916, TIL916A, TIL916B QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS _ C D3439, MAY 1990 • Choice of Two or Four Channels * Gallium-Arsenide Diode Infrared Source

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

TIL914

Abstract: 8 channel optocouplers B33B TIL914B TL914 TIL913 TIL914A
Contextual Info: TEXAS INSTR OPTO aUlTab 3SE D QQ7h33S 1 TXIb TIL913, TIL913A, TIL913B DUAL CHANNEL TIL914, TIL914A, TIL914B QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS D3438, MAY 1990 • Choice of Two or Four Channels * Gallium-Arsenide Diode Infrared Source * Source Is Optically Coupled to Silicon

PHILIPS CNX38

Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.

Contextual Info: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.

photo scr

Abstract: PS3001
Contextual Info: N.E C ELECTRONICS 3 0E INC D • bME7SES ODa^bû 7 ■ PHOTO S.CR COUPLERS c P S3001 1 , PS3002(1 ) PHOTO SCR COUPLER DESCRIPTION The PS3001 and PS3002 are optically coupled isolators containing GaAs infrared emitting diode and a PNPN silicon photo SCR.

PHILIPS CNX36

Abstract: optocoupler cnx36 cnx36 CNX35 PHILIPS CNX35 CNX35U CNX36U CNX39 CNX39U T-41-83
Contextual Info: CNX35 CNX36 CNX39 •I bbS3T31 005QT15 k N AÏ1ER PHILIPS/DISCRETE SSE D T ~ H \ ~ 8 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

t418

Contextual Info: SIEMENS AKTIENG ESEL LSCH AF M7E D • flE3SbDS 0G27515 S « S I E G F—4 l-<rR SIEM EN S IL101B m Oplocouplers FEATURES Maximum Ratings • High Speed Input Diode Forward DC Current . . . Reverse Voltage . • Faraday Shielded Photodetector Improves Com mon Mode Rejection

CNX71

Contextual Info: [ [ N AMER PHILIPS/DISCRETE 2SE D • kbS3*m QQSIOHS 0 ■ Jl CNX71 HIGH-VOLTAGE OPTOCOUPLER The CNX71 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line OIL plastic envelope. The base is not connected.

ps3002

Abstract: PS3001 nec reed relay
Contextual Info: 30E D N.E C EL EC TRONICS INC PHOTO SpR COUPLERS PS3001 1 , PS3002(1 ) PHOTO SCR COUPLER DESCRIPTION The PS3001 and PS3002 are o p tica lly coupled isolators containing GaAs infrared e m itting diode and a PNPN silicon p h o to SCR. PACKAGE DIMENSIONS in millimeters (inches)

SMD Transistor AFR

Contextual Info: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

CNX62

Abstract: BS415 DDS1015
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

CNX62

Abstract: BS415 sot174
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.

Contextual Info: ^53=131 0020671, 1 • 11 CNR36 DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change w ithout notice. N AI1ER PHILIPS/DISCRETE r - w 25E D - s r a HIGH-SPEED OPTOCOUPLER The CNR36 Is a fast switching optocoupler consisting o f a GaAIAs light emitting diode which is opti­

CNR36

Abstract: D020 T015 phototransistor t418
Contextual Info: rr •I ^53=131 G020Ô71 1 ■ DEVELOPMENT DATA 11 This data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. CNR36 N AMER PHILIPS/DISCRETE S5E HIGH-SPEED OPTOCOUPLER The CNR36 is a fast switching optocoupler consisting of a GaAIAs light emitting diode which is opti­

Contextual Info: N E C ELECTRONICS INC 3QE D • tM27S25 OOa^bbñ 3 ■ PHOTO COUPLERS PS2403-1,PS2403-2, PS2403-3, PS2403-4 MULTI PHOTO COUPLER HIGH ISOLATION VOLTAGE SINGLE TR A N S IS T O R TYPE DESCRIPTION The PS2403-1, -2, -3 and -4 series are optically coupled isolator containing a G aAs light emitting diode and an NPN

11 AK 30 S-2

Contextual Info: NEC ELECTRONICS INC 3DE D • b427S5S G 0 2 U a S 3 ■ / PHOTO COUPLERS PS2B0S-1,PS2B0B-2,PS2B0S-3,PS2B0B-4 MULTI PHOTO COUPLER HIGH ISOLATION VOLTAGE AC IN P U T RESPONSE TYPE DESCRIPTION The PS2505-1, -2, -3 and -4 series are optically coupled isolator containing a GaAs light emitting diode and an NPN

Contextual Info: [[ N AMER PHILIPS/DISCRETE 25E D bb53T31 0021025 0 • CNX71 T - 4 - I - ^ 3 H IG H -V O L T A G E O P T O C O U P L E R The CNX71 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

CNX62

Abstract: BS415
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.

NEC PS1001

Abstract: PS1001 lb30
Contextual Info: N E C ELECTRONICS INC 3GE D • b457555 0G3it.3b 1 ■ PH O TO O T~H1'#3 C O U P LE R PS1001 PHO TO C O U PLER IN D U S T R IA L U SE DESCRIPTION Tha PS 1001 is an optically coupled isolator containing a GaAs light emitting diode and an NPN sillicon photo transistor.

NEC 2561

Abstract: HP 4360 5082-4360 nec 2561 photodiode pc 2561 2561 nec pht 094 6N137 PS2007B Q02u
Contextual Info: N E C 3 QE D ELE CTR ONICS INC • L 4 2 7 S 2 S Q 0 2 U 40 3 ■ PHOTO COUPLER PS2007B HIGH SPEED PHOTO COUPLER DESCRIPTION The PS2007B is a high speed photo coupler containing a GaAsP light em itting diode and an integrated detector consisting o f a photodiode and a high gain linear amplifier that drives a schottky clamped open collector output