DIODE T28 Search Results
DIODE T28 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE T28 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MAX5968
Abstract: 12VSB cb amplifier
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MAX5968 12VSB cb amplifier | |
laptop mother board voltage details
Abstract: 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1
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LM95241 65nm/90nm) LM95241 laptop mother board voltage details 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1 | |
laptop mother board voltage details
Abstract: 452 diode 3904 transistor 2n3904 transistor 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX
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LM95241 65nm/90nm) LM95241 laptop mother board voltage details 452 diode 3904 transistor 2n3904 transistor 2N3904 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX | |
Q62702-B695
Abstract: 639C
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Q62702-B695 OD-323 Apr-30-1998 20eries Q62702-B695 639C | |
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Contextual Info: Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ |
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2N3904 geometry
Abstract: D1 diode
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LM95241 65nm/90nm) 2N3904 geometry D1 diode | |
S6 diode
Abstract: diode S6 diode s6 28 DIODE T25 DIODE T25 4 DIODE T25 4 do diode S62 DIODE S6 67
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f650
Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
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OCR Scan |
PA54H PA54HiiN 19-5MAX. -1611t -5611t Sifi-27 f650 UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514 | |
MBR360Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap |
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MBR350, MBR360 MBR360 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
DIODE 1N5822
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
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1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL | |
29 DIODE SMD CODE MARKING
Abstract: diode smd marking "147"
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OCR Scan |
Q62702-B0875 Q62702-B0854 SCD-80 29 DIODE SMD CODE MARKING diode smd marking "147" | |
1N5822RL
Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
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1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL | |
SMD T28
Abstract: B0908 B0909
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VES05991 Q62702- B0909 B0908 SCD-80 Jul-10-1998 SMD T28 B0908 B0909 | |
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Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with |
OCR Scan |
MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 b3b72Â MBR320 | |
BB857 DIODE SCD80
Abstract: BB857 SCD80
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BB857 VES05991 BB857 SCD80 Un001 Jul-26-2001 BB857 DIODE SCD80 SCD80 | |
SMD T28
Abstract: BB 555 Q62702-B0853 Q62702-B0864 Diode smd 67 VES05991
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VES05991 Q62702-B0864 Q62702-B0853 SCD-80 Jul-28-1998 SMD T28 BB 555 Q62702-B0853 Q62702-B0864 Diode smd 67 VES05991 | |
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Contextual Info: BB 857 SIEMENS Silicon Tuning Diode • For SAT-indoor-units • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SM D package • Excellent uniformity and matching due to "in-line" matching assembly procedure |
OCR Scan |
Q62702-B0897 Q62702-B0893 SCD-80 | |
marking T28
Abstract: Q62702-B0854 Q62702-B0875
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VES05991 Q62702-B0875 Q62702-B0854 SCD-80 Jul-28-1998 marking T28 | |
marking code BB
Abstract: smd marking bb Q62702-B0893 Q62702-B0897 diode SMD code 10
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VES05991 Q62702-B0897 Q62702-B0893 SCD-80 Mar-27-1998 marking code BB smd marking bb Q62702-B0893 Q62702-B0897 diode SMD code 10 | |
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Contextual Info: MBR3060 Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, |
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MBR3060 | |
smd diode 644
Abstract: 644 Diode B0907 IR 644 DIODE T25 4 DIODE SMD T25 Q62702-B0905 Q62702-B0907 smd diode marking code 2a 5k variable resistance
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Q62702-B0905 Q62702-B0907 OD-323 Jul-09-1998 smd diode 644 644 Diode B0907 IR 644 DIODE T25 4 DIODE SMD T25 smd diode marking code 2a 5k variable resistance | |
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Contextual Info: SIEMENS BB 565 Silicon Variable Capacitance Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure |
OCR Scan |
Q62702-B0869 Q62702-B0873 SCD-80 | |
BB867-02V
Abstract: SC79 diode marking CT1
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BB867-02V VES05991 Jul-31-2001 BB867-02V SC79 diode marking CT1 | |