DIODE T28 Search Results

laptop mother board voltage details

Abstract: 3904 TRANSISTOR 2N3904 APP National Discrete Products
Contextual Info: LM95241 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruThermTechnology 65nm/90nm Literature Number: SNIS143D LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology (65nm/90nm) • Remote temperature readings without digital filtering:

MAX5968

Abstract: 12VSB cb amplifier
Contextual Info: 19-5115; Rev 1; 2/10 Circuit-Breaker and Ideal Diode Controller with Digital Monitoring Functions The MAX5968 soft-switch and ideal diode controller protects systems with redundant DC-DC converter modules against failure of the converter by controlling external

laptop mother board voltage details

Abstract: 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1
Contextual Info: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm • Remote temperature readings without digital filtering: General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National's TruTherm technology.

laptop mother board voltage details

Abstract: 452 diode 3904 transistor 2n3904 transistor 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX
Contextual Info: LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with

Q62702-B695

Abstract: 639C
Contextual Info: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ

2N3904 geometry

Abstract: D1 diode
Contextual Info: August 2006 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm General Description The LM95241 is a precision dual remote diode temperature sensor (RDTS) that uses National’s TruTherm technology. The 2-wire serial interface of the LM95241 is compatible with

S6 diode

Abstract: diode S6 diode s6 28 DIODE T25 DIODE T25 4 DIODE T25 4 do diode S62 DIODE S6 67
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

f650

Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360

Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: SIEMENS BB 659 Silicon Tuning Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure

DIODE 1N5822

Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

29 DIODE SMD CODE MARKING

Abstract: diode smd marking "147"
Contextual Info: SIEMENS BB 659 Silicon Tuning Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure

Contextual Info: SIEMENS BB 555 Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure

Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

3904 transistor

Abstract: amd athlon PIN LAYOUT
Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

3904 transistor

Contextual Info: LM95241 www.ti.com SNIS143E – AUGUST 2006 – REVISED MARCH 2013 LM95241 Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology 65nm/90nm Check for Samples: LM95241 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • •

1N5822RL

Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation