DIODE T27 Search Results

T589N

Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Contextual Info: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 10 Motorola Preferred Device CATHODE ► f-J W -° 2 3 CATHODE/ANODE 2 CASE 318-08, STYLE 11 SOT-23 TO—236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage

diode 6b3

Contextual Info: O K I electronic components QL392N-03, QL3492N-03 1.3 |im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-03 and OL3492N-Ü3 are 1.3 |iin, MQW InGaAsP/InP laser-diode coaxial modules with single-mode fiber pigtails. These modules are optimal light sources for optical subscriber loops and

c1251

Abstract: transistor c1300 C1109 E5015 transistor C128 C1240 C1299 C1300 C1301 C1332
Contextual Info: à DESIGNER SERIES Monsanto MCT272 PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Controlled Current Transfer Ratio — 75% to 150% specified conditions The M C T272 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu­

OL391N-03

Abstract: OL392N-03
Contextual Info: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and

Contextual Info: T27G Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current40m V(RRM)(V) Rep.Pk.Rev. Voltage15 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)40m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)10

c1251

Abstract: MCT273 C1240 C1333 C1251 diode C1304 transistor C128 C1109 C1305
Contextual Info: r DESIGNER SERIES Monsanto MCT273 PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Controlled Current Transfer Ratio — 125% to 250% specified conditions The M C T273 is a p h ototransistor-type o p tica lly coupled isolator. A n infrared e m ittin g diode manu­

Contextual Info: N E C ELECTRONICS INC b2E D • b427S25 0030107 STb « N E C E DATA SHEET NEC PHOTO DIODE NDL5500 ELECTRON DEVICE 1 000 to 1 600 nm OPTICAL FIBER CO M M U N ICATIO N S 050 InGaAs A V A L A N C H E PH OTO DIODE D ESCRIPTION NDL5500 is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica­

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR15L30 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR15L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR12L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR12L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR12L30 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR12L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR20L40 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

TO227

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR15L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR15L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR12L40 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR12L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR10L30 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR10L40 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD MGBR20L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.

T161-160

Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.