DIODE SY 180 10 Search Results

Contextual Info: BSS169 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS on ,max 12 Ω 0.09 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23

Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB101MGC MEGA GREEN EBLB101SURCE HYPER RED EBLB101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: SEM ICONDUCTOR U10A2CIA TE CHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SW ITC H IN G TY PE POW ER SUPPLY APPLICATIO N C O N V E R T E R & CH O PP E R A PPLICATION. SJ MILLIMETERS 10.0±0.3 15.010.3 FEA T U RE S 2.70+0.3 0.76+0.09/-0.05 <t>3.2±0.2 3.010.3

LM4250

Abstract: OP-32 OP32AZ OP32EP OP32EZ OP32FP OP32FZ OP32GP OP32GZ SY 360 05
Contextual Info: ANALOG ► DEVICES High-Speed A ^ > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • O R D E R IN G IN F O R M A T IO N v osMAX (HV) 300 300 500 1000 CERDIP 8-PIN — OP32EP OP32FP OP32GP

BUK555-200A

Abstract: BUK555-200B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

p32a

Abstract: S450N
Contextual Info: ANALOG DEVICES □ High-Speed /V > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • p re c is io n Programmable Supply Current. 500nA to 2mA Single Supply Operation. +3Vto+30V

diode sy 200

Abstract: diode sy 180 10 diode sy 400 8 pnp 8 transistor array ttl transistor kp 18P4G 20P2N-A M63840FP M63840KP M63840P
Contextual Info: MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 M63840P/FP/KP PRELIMINARY 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. DESCRIPT ION PIN CONFIGURATION （TOP VIEW）

Contextual Info: SCHOTTKY BARRIER DIODE u a EC15QS03L /3 0 v FEATURES ° M iniature Size, Surface M ount Device o Extremenly Low Forw ard Voltage D rop o Low Pow er Loss, H igh Efficiency o H igh Surge Capability o 20 Volts through 100 Volts Types Available o Packed in 12mm Tape and Reel

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

AX3002

Contextual Info: A N A LO G ► D E V IC E S High-Speed %CL> 10 Programmable Micropower Operational Amplifier OP-32 precision perform ance when the OP-32 is used with an unregulated battery or vehicular electrical system. FEA TU R ES • • Program m able Supply C u rre n t. 500nA to 2mA

pmi pm1008

Abstract: PM1008GZ
Contextual Info: PM-1008 PMI LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER P r e c i s i o n M o n o l i t h i c * Inc. FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

62783AP

Abstract: 62784AP
Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62783AP/F/AF TD62784AP/F/AF 8CH HIGH-VOLTAGE SOURCE DRIVER The TD62783AP/F / AF Series are comprised of eight source current Transistor Array. TD62783AP TD62784AP These drivers are specifically designed for fluorescent

Contextual Info: 15 ÛEC PLE SS EY SEMICONDS D 3 7 böS EE 0D0Ô313 M « P L S B • PLESSEY Semiconductors. ZN447/ZN448/ZN449 " P - S 1 - I0 - Q 2 8-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN447, ZN448 and ZN449 are 8-bit, successive approximation A-D converters designed for easy interfacing

diode sy 104

Abstract: diode sy 180 10 uc 18 yg
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHP65N06LT, PHB65N06LT SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

diode sy 180 10

Abstract: diode sy 106
Contextual Info: TC74LVQ32F/FN/FS QUAD 2 -INPUT OR GATE The TC74LVQ32 is a high speed CMOS 2-INPUT OR G A T E fabricated with silicon gate and double - layer metal w iring C2M O S technology. Designed for use in 3.3 V o lt systems, it achieves high speed operation w hile m aintaining the CMOS low power dissipation.

BUK455-400B

Abstract: T0220AB
Contextual Info: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: SUBMINIATURE SOLID STATE LAMP KM-27SECK-10 Features !SUBMINIATURE ! WIDE Description PACKAGE. The Super Bright Orange source color devices are VIEWING ANGLE. made with DH InGaAlP on GaAs substrate Light ! RIGHT ANGLE BEND. ! LONG LIFE SOLID STATE RELIABILITY.

BLB102MGC-6V-P

Contextual Info: 10mm BAYONET BASED LED LAMP BLB102MGC-6V-P MEGA GREEN Features Description ! BUILT-IN The Mega Green source color devices are made CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. ! LONG LIFE. Diode. ! LOW CURRENT, POWER SAVINGS.

Contextual Info: 10mm BAYONET BASED LED LAMP BLB102MGC-28V-P Features ! BUILT-IN Description CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. ! LONG CURRENT, POWER SAVINGS. ! LOW MAINTENANCE. ! 28V The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting