DIODE SY 171 10 Search Results

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

diode sy 171 10

Abstract: diode sy 170/10
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,

diode sy 171

Abstract: "DIODE" SY 171 1 diode sy 171 10 "DIODE" SY 171 "DIODE" SY 171 1 g
Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62083APA 8CH DARLINGTON SINK DRIVER The TD62083APA is high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads.

diode sy 171 10

Abstract: diode sy 171 "DIODE" SY 171 1 g diode ITT 172
Contextual Info: - TC74LVX14F/FN/FS HEX SCHMITT INVERTER T he T C 74L V X 14 is a h ig h speed CMOS H E X SCH M ITT IN V ER T E R fab ricated w ith silicon gate C2MOS technology. D esigned for use in 3.3 V olt system s, i t achieves h ig h speed o peration w hile m a in ta in in g th e CMOS low pow er dissipation.

"DIODE" SY 171 1 g

Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
Contextual Info: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise

Halbleiterbauelemente DDR

Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
Contextual Info: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik

fch131

Abstract: integrated circuits equivalents list rc 261 7400N FJJ14 FCL101 FCH131 equivalent ttl NAND gate with expander 7402N 7420N
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

integrated circuits equivalents list

Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable

FCH121

Abstract: FCL101 7400N 7490N 7402N 7420N FJH101 FJH111 FJH121 FJH131
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

integrated circuits equivalents list

Abstract: FCY101 FCH151 FCH191 7400N 7402N 7420N FCL101 FJH101 FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

integrated circuits equivalents list

Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard

FCH211

Abstract: FCH101 FCL101 FCH 211 dtl logic gates FCH191 7451 ttl fch 131 tl 741 7402N
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 M ullard comparable

integrated circuits equivalents list

Abstract: FCH141 FCH191 7400N FCL101 7402N 7420N FJH101 Mullard Diode FJH121
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

sc11171

Abstract: SC11176CN SC11176CN-65 sc1117
Contextual Info: SC11171/SC1U76 High Performance CMOS Color Look-up Table SIERRA SEMICONDUCTOR □ □ □ □ □ Anti-sparkle circuitry. Compatible With the RSI 70 Video Standard. Pixel Rates Up to 65 MHz. 256k Possible Colors. Single Monolithic, High Performance CMOS. Low DAC Glitch Energy.

Contextual Info: PD - 9.1262D International IÜR Rectifier IRF7603 HEXFET^ Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel M O SFET • Very Small SO IC Package • Low Profile < 1.1 mm • Available in Tape & Reel • Fast Switching V d ss = 30 V

FCH171

Abstract: fch 191 integrated circuits equivalents list 7400N FCL101 fch 131 7402N 7420N FJH101 FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

diode sy 171 10

Abstract: "DIODE" SY 171 1 g
Contextual Info: PD - 9.12 64 C International IOR Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V qss = -30V f^DS(on) = 0.09Î2

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

DXT192-10-16

Abstract: connector 26 pins grommet connector Diode SY 356 SY3000-37-34A SS5YJ5-20 diode sy 171 10 SY3000 SY100-30-4A SS5YJ5-41
Contextual Info: For details about certified products conforming to international standards, visit us at www.smcworld.com. 5 Port Solenoid Valve Rubber Seal Series SYJ5000 Specifications Air 0.15 to 0.7 2 position single Operating pressure range 0.1 to 0.7 2 position double

ta31033

Abstract: TA31032P TA31033P ta31033ap ta31032 TA3103
Contextual Info: SPEECH NETWORK ICs SPEECH NETWORK FOR TELEPHONE SET FEATURES • Direct interface w ith receiver dynamic type, electrom agnetic type of low impedance type is possible. • This 1C is able to change over an input from transmitter to an input of dial signal (DTMF signal) and output to

Contextual Info: HOLTEK HT70LXX Voltage Detector JrreiiminaFv Features • • • Built-in h y steresis ch aracteristic TO-92 an d SOT-89 p ackages Low power consum ption Low tem perature coefficient Built-in high-stability reference source Applications • • • M icrocom puter reset

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von